Epitaxial Growth of Thin Ge Films on [001] Gaas by Laser Photochemical Vapor Deposition from GeH4
Keyword(s):
193 Nm
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ABSTRACTEpitaxial Ge films have been grown on [001] GaAs for substrate temperatures (Ts) as low as 285°C by photodissociating GeH4 at 193 nm in parallel geometry. For a laser fluence of ~15 mJ - cm-2, the film growth rate varies from 0.6 to ~5 nm - min-1, depending upon Ts and gas pressure. Plan and cross-sectional TEM studies of the Ge/GaAs bicrystal demonstrate that the 400–700 A thick Ge films are single crystal and epitaxial with the substrate. The present limitation on epitaxial film thickness appears to be imposed by reduced adatom mobility at the temperatures investigated.
2002 ◽
Vol 106
(24)
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pp. 6234-6247
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2002 ◽
Vol 16
(08)
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pp. 1261-1267
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1996 ◽
Vol 11
(3)
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pp. 694-702
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