Molecular Ion S2+ and SiFn+ implantations into GaAs

1989 ◽  
Vol 147 ◽  
Author(s):  
W. D. Fan ◽  
W. Y. Wang
Keyword(s):  
Carrier Concentration ◽  
Active Layer ◽  
Concentration Profiles ◽  
Carrier Distribution ◽  
Furnace Annealing ◽  
Molecular Ion ◽  
Pl Spectra ◽  
Active Layers ◽  
Activation Efficiency

AbstractMolecular ion S2+ and SiFn+ implantations into GaAs have been investigated to form very thin active layers. After implantation, the transient annealing (TA) and furnace annealing (FA) were used. The measurements of activation efficiency, mobility, carrier concentration profiles and PL spectra were carried out. The experiments show that after TA, the activation efficiency, mobility and carrier distribution are almost the same between samples implanted with S+ at an energy of 50KeV to a dose of 3×1013cm−2 and S+2 at 100KeV to 1.5×1013cm−2. It shows that the damage of S2-implanted samples can be removed by TA, and a very thin active layer can be formed by the implantation of S2+ at 50KeV. For SiFn-implanted samples, the activation efficiency and mobility. decrease with increase of the implanted ion mass. As+ co-implantation into SiF-implanted samples has been used to improve both activation efficiency and mobility. After comparison with the properties of the SiFt implantation, S2+implantation is more acceptable to form thin active layers.

Electrical Properties of n- and p-type In0.53Ga0.47As Layers Formed by Ion Implantation and Rapid Thermal(Flash)Anneal

1987 ◽  
Vol 92 ◽  
Author(s):  
S.G. Liu ◽  
S.Y. Narayan ◽  
C.W. Magee ◽  
C.P. Wu ◽  
F. Kolondra ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Ion Implantation ◽  
Carrier Concentration ◽  
Concentration Profiles ◽  
Electrical Characteristics ◽  
Good Surface ◽  
Active Layers ◽  
P Type ◽  
Controlled Doping

ABSTRACTRapid thermal annealing (4−7s) of 28Si and 9Be implants in VPE-grown In0.53Ga0.47As has produced n- and p-type active layers with controlled doping levels between 1017 and 3×1018 cm−3. The multiple-implant schedules were based on Rp and ΔR data derived from SIMS measurements on single-energy implants. The activated n- and p-type layers have a good surface morphology and 300 K mobilities of 3000–7000 and 100–200 cm2 /V−s, respectively. Data on implant schedules, electrical characteristics, carrier concentration profiles, and Rp /ΔRp information are presented.

Ir Radiation Transient Annealing of Silicon Implanted Si Gallium Arsenide

1983 ◽  
Vol 23 ◽  
Author(s):  
A. Ezis ◽  
Y. K. Yeo ◽  
Y. S. Park
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Low Dose ◽  
Drift Mobility ◽  
Electrical Activation ◽  
Concentration Profiles ◽  
Ir Radiation ◽  
Activation Efficiency ◽  
Device Applications ◽  
Van Der Pauw

ABSTRACTThe electrical properties of IR radiation transient annealed Si implanted semi-insulating GaAs are presented for 100 keV ion doses from 3 × 1012 to 3 × 1014 cm−2. For wafers implanted with 3 × 1012 cm−2 doses, suitable for FET channel layers, carrier concentration and drift mobility profiles were determined from C-V and transconductance measurements on fat FET structures. Optimum electrical activation and carrier concentration profiles were obtained for peak pulse temperatures of 930–950°C. Van der Pauw measurements were made on substrates implanted with Si doses ≥ 1 × 1013 cm−2 to determine sheet carrier concentration and Hall mobility. The peak pulse temperature required to give optimum activation efficiency is found to increase with dose. The results presented here demonstrate that undoped substrates are preferable to Cr-doped substrates for low dose device applications.

Vertically Optimized Phase Separation with Improved Exciton Diffusion Enables High-Efficiency Organic Solar Cells with Thick Active Layers

2021 ◽  
Author(s):  
Yanming Sun ◽  
Yunhao Cai ◽  
Qian Li ◽  
Guanyu Lu ◽  
Hwa Sook Ryu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Phase Separation ◽  
Active Layer ◽  
Organic Solar Cells ◽  
High Efficiency ◽  
Diffusion Length ◽  
Active Layer Thickness ◽  
Exciton Diffusion ◽  
Exciton Diffusion Length ◽  
Active Layers

Abstract The development of high-performance organic solar cells (OSCs) with thick active layers is of crucial importance for the roll-to-roll printing of large-area solar panels. Unfortunately, increasing the active layer thickness usually results in a significant reduction in efficiency. Herein, we fabricated efficient thick-film OSCs with an active layer consisting of one polymer donor and two non-fullerene acceptors. The two acceptors were found to possess enlarged exciton diffusion length in the mixed phase, which is beneficial to exciton generation and dissociation. Additionally, layer by layer approach was employed to optimize the vertical phase separation. Benefiting from the synergetic effects of enlarged exciton diffusion length and graded vertical phase separation, a record high efficiency of 17.31% (certified value of 16.9%) was obtained for the 300 nm-thick OSC, with an unprecedented short-circuit current density of 28.36 mA cm−2, and a high fill factor of 73.0%. Moreover, the device with an active layer thickness of 500 nm also shows a record efficiency of 15.21%. This work provides new insights into the fabrication of high-efficiency OSCs with thick active layers.

Enhancement of Intrinsic Carrier Concentration in the Active Layer of Solar Cell Using Indium Nitride Quantum Dot

2015 ◽  
Vol 793 ◽  
pp. 435-439 ◽  
Author(s):  
M.A. Humayun ◽  
M.A. Rashid ◽  
F. Malek ◽  
S.B. Yaakob ◽  
A.Z. Abdullah ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Carrier Concentration ◽  
Density Of States ◽  
Active Layer ◽  
Cell Structure ◽  
Indium Nitride ◽  
Effective Density ◽  
Intrinsic Carrier Concentration ◽  
Solar Cell Structure

This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results were compared. From the comparison results it has been revealed that the application of InN quantum dot in the active layer of the device structure improves the effective density of states both in conduction band and in the valance band. Consiquently the intrinsic carrier concentration has been improved significently by using InN quantum dot in the solart cell structure.

Diffusion of ion-implanted Boron and Silicon in Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Suresh Uppal ◽  
A. F. W. Willoughby ◽  
J. M. Bonar ◽  
N. E. B. cowern ◽  
R. J. H. Morris ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Resolution ◽  
Diffusion Coefficients ◽  
Doping Concentration ◽  
Diffusion Mechanism ◽  
Concentration Profiles ◽  
Furnace Annealing ◽  
Temperature Range ◽  
Self Diffusion ◽  
Secondary Ion

ABSTRACTThe diffusion of B and Si in Ge is studied using implantation doping. Concentration profiles after furnace annealing in the temperature range 800–900 °C were obtained using high resolution secondary ion mass spectroscopy (SIMS). Diffusion coefficients are calculated by fitting the annealed profiles. For B, we obtain diRusivity values which are two orders of magnitude slower than previously reported in literature. An activation energy of 4.65(±0.3) eV is calculated for B diffusion in Ge. The results suggest that diffusion mechanism other than vacancy should be considered for B diffusion in Ge. For Si diffusion in Ge, the diffusivity values calculated in the temperature range 750–875 °C are in agreement with previous work. The activation energy of 3.2(±0.3) eV for Si diffusion is closer to that for Ge self-diffusion which suggests that Si diffusion in Ge occurs via the same mechanism as in Ge self-diffusion.

Sign in / Sign up

Export Citation Format

Share Document