Measurement of the Triaxial Stress State of Confined Line Structures During Thermal Cycling

1990 ◽  
Vol 203 ◽  
Author(s):  
M.A. Moske ◽  
P.S. Ho ◽  
D.J. Mikalsen ◽  
J.J. Cuomo ◽  
R. Rosenberg
Keyword(s):  
Thermal Cycling ◽  
Room Temperature ◽  
Triaxial Stress ◽  
Line Geometry ◽  
X Ray ◽  
Layer Deposition ◽  
Stress Components ◽  
Length Direction ◽  
Beam Technique ◽  
Deposition Conditions

ABSTRACTA method based on the bending beam technique has been developed to measure the mechanical stresses of fine lines confined by a dielectric layer. This method has been employed to determine the thermal stress of AI(2at%Cu) lines passivated by a quartz overlayer between room temperature and 400ºC. The effect of quartz confinement was analyzed by matching the thermal strains at the metal/quartz interfaces and imposing a mechanical equilibrium condition on the structure. The analysis enables us to deduce the triaxial stress components of metal and quartz from measurements of the substrate bending parallel and perpendicular to the length direction of the lines. Results of the measurementshow a substantial stress enhancement as a result of the confinement, with the stress level significantly higher than that of a passivatecd blanket film. The magnitude of the stress depends on the line geometry, the layer deposition conditions and the extent of plastic deformation during thermal cycling. Results of this measurement are consistent with those determined using X-ray techniques.

scholarly journals Characterization of Ti/SnO2 Interface by X-ray Photoelectron Spectroscopy

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 202
Author(s):  
Miranda Martinez ◽  
Anil R. Chourasia
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Chemical Interaction ◽  
Photoelectron Spectra ◽  
X Ray ◽  
Increasing Trend ◽  
Substrate Temperatures ◽  
Beam Technique

The Ti/SnO2 interface has been investigated in situ via the technique of x-ray photoelectron spectroscopy. Thin films (in the range from 0.3 to 1.1 nm) of titanium were deposited on SnO2 substrates via the e-beam technique. The deposition was carried out at two different substrate temperatures, namely room temperature and 200 °C. The photoelectron spectra of tin and titanium in the samples were found to exhibit significant differences upon comparison with the corresponding elemental and the oxide spectra. These changes result from chemical interaction between SnO2 and the titanium overlayer at the interface. The SnO2 was observed to be reduced to elemental tin while the titanium overlayer was observed to become oxidized. Complete reduction of SnO2 to elemental tin did not occur even for the lowest thickness of the titanium overlayer. The interfaces in both the types of the samples were observed to consist of elemental Sn, SnO2, elemental titanium, TiO2, and Ti-suboxide. The relative percentages of the constituents at the interface have been estimated by curve fitting the spectral data with the corresponding elemental and the oxide spectra. In the 200 °C samples, thermal diffusion of the titanium overlayer was observed. This resulted in the complete oxidation of the titanium overlayer to TiO2 upto a thickness of 0.9 nm of the overlayer. Elemental titanium resulting from the unreacted overlayer was observed to be more in the room temperature samples. The room temperature samples showed variation around 20% for the Ti-suboxide while an increasing trend was observed in the 200 °C samples.

Electrochemical Atomic Layer Deposition and Characterization of CdTe and PbTe Thin Films

2015 ◽  
Vol 31 ◽  
pp. 30-39 ◽  
Author(s):  
Amal Kabalan ◽  
Pritpal Singh
Keyword(s):  
Room Temperature ◽  
Atomic Layer ◽  
Flow Cell ◽  
X Ray ◽  
Optical Reflection ◽  
Reflection Data ◽  
Layer Deposition ◽  
Glancing Angle ◽  
Layer Flow

This study reports the cycle chemistries involved in depositing CdTe and PbTe nanofilms. An automated thin-layer flow cell electrodeposition system was used to deposit the films at room temperature. Cyclic voltammetry was used to study the Underpotential Deposition (UPD) of the compounds. The monolayer/cycle deposition rate was also monitored in order to insure that the film is depositing at a uniform rate. The chemical composition of the films was characterized using Energy-Dispersive X-ray Spectroscopy (EDS) on a Scanning Electron Microscope (SEM). The crystallinity of the films was studied using a glancing angle X-ray diffractometer. The bandgaps of the films were calculated using measured optical reflection data.

The Effect of Ultra-Low Temperature Treatments on the Stress in Aluminum Metallization on Silicon Wafers

1994 ◽  
Vol 338 ◽  
Author(s):  
Frank Baldwin ◽  
Paul H. Holloway ◽  
Mark Bordelon ◽  
Thomas R. Watkins
Keyword(s):  
Stress Relaxation ◽  
Low Temperature ◽  
Thermal Cycling ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Silicon Wafers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Aluminum Metallization ◽  
Low Temperature Treatments

ABSTRACTThe stresses in Al-0.75w%Si-0.5w%Cu unpatterned metallization on silicon wafers have been measured using substrate curvature and x-ray diffraction techniques after quenching in liquid nitrogen. Stresses were measured with and without phospho-silicate glass overlayers and SiO2 underlayers, and thermal cycling followed by relaxation at room temperature. It was found that cooling the substrates to 77 K and warming to room temperature caused the metallization stress to go from tensile to compressive. Subsequent heating of the substrates to above ∼70°C followed by cooling to room temperature caused the stress to become tensile. Both compressive and tensile stresses were found to relax at room temperature with a time constant of 2.3 ± 0.2 hours. The magnitude of stress relaxation was a function of temperature, being about 20 MPa after heating to 240°C. The metallization exhibited both compressive and tensile flow stresses of ∼100 MPa near room temperature.

Epitaxy of Ni on Si(111) by Ion Beam Assisted Deposition

1990 ◽  
Vol 187 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant
Keyword(s):  
Room Temperature ◽  
Epitaxial Film ◽  
Ion Beam ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Ion Energies ◽  
Deposition Conditions

AbstractEpitaxial growth of Ni (111) on Si (111) has previously been obtained at room temperature by 25-keV-Ni ion beam assisted deposition, where both ion and vapor fluxes were incident at 45° to the specimen normal. This work explores the effect of a wider range of deposition conditions on epitaxial film quality. Nominally 300-nm-thick films were deposited at room temperature on Si (111) and other substrates. The substrates were sputter cleaned by the Ni ion beam immediately prior to deposition. Ion energies of 25 to 175 keV, relative ion to vapor fluxes R from 0 to 0.1, and vapor deposition rates of 0.05 to 0.5 nm/s were examined. Bragg-Brentano symmetric x-ray diffraction evaluated film quality while Ni (220) grazing-incidence x-ray diffraction rocking curves verified film epitaxy. Film quality changed gradually over these deposition parameters, with an optimum at 25 keV and an R of about 0.01. At higher energies and R values sputtering and radiation damage destroyed the film epitaxy

Diamond Composites for Power Electronics Application

2008 ◽  
Vol 59 ◽  
pp. 143-147
Author(s):  
Svetlana Levchuk ◽  
Monika Poebl ◽  
Gerhard Mitic
Keyword(s):  
Thermal Resistance ◽  
Thermal Cycling ◽  
Power Electronics ◽  
Room Temperature ◽  
Thermal Loads ◽  
Diamond Composite ◽  
X Ray ◽  
Igbt Modules ◽  
Active Metal ◽  
Solder Layer

In view of power electronics applications, baseplates made from metal diamond composites have been manufactured and characterised. The surface contours of the baseplates were measured during thermal loads up to 180°C starting at room temperature with help of the TherMoiré technique. X-ray analysis investigation was performed to detect porosity and local inhomogeneities of the baseplates. Al- and Cu-based diamond composite baseplates were Ni-plated and used for manufacturing of 3.3 kV IGBT modules. The solder layer between AlN AMB (active metal brazing) substrates and baseplates was investigated by ultrasonic and X-Ray analyses. Thermal resistance of the manufactured IGBT modules was characterised and compared to that of IGBT modules with AlSiC or Cu baseplates. The influence of thermal cycling on the solder layer and thermal resistance of the manufactured module was investigated.

scholarly journals Etchability Dependence of InOx and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions

MRS Advances ◽  
2018 ◽  
Vol 3 (4) ◽  
pp. 207-212 ◽  
Author(s):  
Ana Amaral ◽  
G. Lavareda ◽  
C. Nunes de Carvalho ◽  
V. André ◽  
Yuri Vygranenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Indium Tin Oxide ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Chemical Reactivity ◽  
X Ray ◽  
Ito Thin Films ◽  
Deposition Conditions

ABSTRACTIndium oxide (InOx) and indium tin oxide (ITO) thin films were deposited on glass substrates by plasma enhanced reactive thermal evaporation (PERTE) at different substrate temperatures. The films were then submitted to two etching solutions with different chemical reactivity: i) HNO3 (6%), at room temperature; ii) HCl (35%): (40 °Bé) FeCl3 (1:1), at 40 °C. The dependence of the etchability of the films on the structural and deposition conditions is discussed. Previously to etching, structural characterization was made. X-ray diffraction showed the appearance of a peak around 2θ=31° as the deposition temperature increases from room temperature to 190 °C, both for ITO and InOx. AFM surface topography and SEM micrographs of the deposited films are consistent with the structural properties suggested by X-ray spectra: as the deposition temperature increases, the surface changes from a finely grained structure to a material with a larger-sized grain or/and agglomerate structure of the order of 250-300 nm. The roughness Rq varies from 0.74 nm for the amorphous tissue to a maximum of 10.83 nm for the sample with the biggest crystalline grains. Raman spectra are also presented.

scholarly journals The Influence of Annealing on the Optical Properties and Microstructure Recrystallization of the TiO2 Layers Produced by Means of the E-BEAM Technique

Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5863
Author(s):  
Katarzyna Jurek ◽  
Robert Szczesny ◽  
Marek Trzcinski ◽  
Arkadiusz Ciesielski ◽  
Jolanta Borysiuk ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Dielectric Films ◽  
X Ray ◽  
Force Microscopy ◽  
Titanium Dioxide Films ◽  
Transmission Electron ◽  
Two Phases ◽  
Beam Technique

Titanium dioxide films, about 200 nm in thickness, were deposited using the e-BEAM technique at room temperature and at 227 °C (500K) and then annealed in UHV conditions (as well as in the presence of oxygen (at 850 °C). The fabricated dielectric films were examined using X-ray powder diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, transmission electron microscopy, and spectroscopic ellipsometry. The applied experimental techniques allowed us to characterize the phase composition and the phase transformation of the fabricated TiO2 coatings. The films produced at room temperature are amorphous but after annealing consist of anatase crystallites. The layers fabricated at 227 °C contain both anatase and rutile phases. In this case the anatase crystallites are accumulated near the substrate interface whilst the rutile crystallites were formed closer to the surface of the TiO2 film. It should be emphasized that these two phases of TiO2 are distinctly separated from each other.

Room Temperature Atomic Layer Deposition of SiO2 on Flexible Plastic Materials

2014 ◽  
Vol 490-491 ◽  
pp. 118-122 ◽  
Author(s):  
Fumihiko Hirose ◽  
Kensaku Kanomata ◽  
Shigeru Kubota ◽  
Bashir Ahmmad ◽  
Kazuhiro Hirahara
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Acrylic Resin ◽  
Atomic Layer ◽  
Soft Materials ◽  
X Ray ◽  
Plastic Materials ◽  
Layer Deposition ◽  
Chemical Resistivity

Room-temperature SiO2 atomic layer deposition (ALD) on soft, flexible materials of acrylic resin and polystyrene is developed using tris (dimethylamino) silane and plasma-excited water vapor. The growth rate is measured to be 0.13 nm/cycle at room temperature on the acrylic resin surface. The SiO2 coating on the soft materials was examined by X-ray photoelectron spectroscopy and an organic solvent resistant test. This process is applicable as a surface treatment for improving chemical resistivity of the soft materials.

Thermally Induced Stresses in Passivated Thin Films and Patterned Lines of AlSiCu

1994 ◽  
Vol 338 ◽  
Author(s):  
U. Burges ◽  
H. Helneder ◽  
H. KÖrner ◽  
H. Schroeder ◽  
W. Schilling
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Aspect Ratio ◽  
Thermal Cycling ◽  
High Temperatures ◽  
Room Temperature ◽  
Elastic Behaviour ◽  
Thermally Induced ◽  
Induced Stresses ◽  
Beam Technique

ABSTRACTA bending beam technique was used to measure the mechanical stresses in AlSi(l%)Cu(0.5%) blanket films as well as in patterned lines (aspect ratio: 0.8) - unpassivated and passivated with SiNx - during thermal cycling from –170°C or room temperature to 450°C.Main results are:a) No significant differences in unpassivated and passivated blanket films with thickness ranging from 0.2 µm to 3.2 µm.b) In unpassivated patterned lines of 0.8 µm thickness the stresses across the lines are very small, while parallel to the lines they show nearly elastic behaviour, except at high temperatures.c) In passivated patterned lines the stresses are much higher than in blanket films, very similar parallel and across the line and nearly elastic. The stress relaxation is small compared with blanket films and depends strongly on the temperature.

An x-ray method for direct determination of the strain state and strain relaxation in micron-scale passivated metallization lines during thermal cycling

1994 ◽  
Vol 9 (1) ◽  
pp. 13-24 ◽  
Author(s):  
Paul R. Besser ◽  
Sean Brennan ◽  
John C. Bravman
Keyword(s):  
Thermal Cycling ◽  
Strain State ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Direct Determination ◽  
Direct Calculation ◽  
Incidence Geometry ◽  
Ray Method ◽  
X Ray ◽  
Principal Strains

We describe a method for directly determining the strain state of passivated metal lines. Synchrotron radiation in the grazing incidence geometry is used to directly measure the in-plane interplanar spacing along the length and width of the lines, while the strain normal to the surface of the line is measured using conventional diffraction methods. The entire strain state is thereby defined. Previous work has measured out-of-plane reflections, fit them to a straight line as a trigonometric function of the angle of orientation, and extrapolated to determine the principal strains. The equivalence of the two x-ray methods on the same sample is demonstrated at room temperature before and after thermal cycling. For short time strain relaxation experiments during thermal cycling, measurement of the three principal strains leads to the direct calculation of the stress relaxation. We apply the strain determination technique to Al-0.5% Cu lines passivated with Si3N4 as the lines are thermally cycled from room temperature to 450 °C and back. The strain state, stress state, and strain relaxation of the lines are calculated at several temperatures during thermal cycling.

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