Relaxation Behavior of Metastable As and P Concentrations in Si After Pulsed and CW Laser Annealing

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Goetzlich ◽  
P.H. Tsien ◽  
H. Ryssel
Keyword(s):  
Ion Implantation ◽  
Time Dependence ◽  
Carrier Concentration ◽  
Laser Irradiation ◽  
Solid Solutions ◽  
Laser Annealing ◽  
High Dose ◽  
Cw Laser ◽  
Different Temperatures ◽  
Removal Technique

ABSTRACTMetastable solid solutions of arsenic and phosphorus atoms were created by high-dose ion implantation in silicon, followed by annealing either with pulsed (Nd:YAG) or CW (CO2;) laser irradiation. The relaxation of these supersaturated layers was investigated by thermal post-treatment at temperatures between 600 and 1000°C. By measuring the time dependence of the sheet carrier concentration, the time constant and the activation energies for the relaxation of the electrically-active As and P atoms were investigated. In addition, the equilibrium carrier concentrations at different temperatures were obtained by Halleffect measurements in connection with a layer-removal technique.

Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
S.W. Chiang ◽  
Y.S. Liu ◽  
R.F. Reihl
Keyword(s):  
Ion Implantation ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
A Cell ◽  
Ft Ir ◽  
Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

Nonequilibrium solid solutions obtained by heavy ion implantation and laser annealing

1980 ◽  
Vol 51 (6) ◽  
pp. 3373-3382 ◽  
Author(s):  
N. Natsuaki ◽  
M. Tamura ◽  
T. Tokuyama
Keyword(s):  
Ion Implantation ◽  
Solid Solutions ◽  
Laser Annealing ◽  
Heavy Ion

scholarly journals Aging Processes in Implanted Fluorine Ions and Laser Irradiated Films of LaGa:YIG

2019 ◽  
Vol 20 (2) ◽  
pp. 202-207
Author(s):  
B.K. Ostafiychuk ◽  
I.P. Yaremiy ◽  
S.I. Yaremiy ◽  
M.M. Povkh ◽  
L.S. Yablon ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Laser Irradiation ◽  
Crystalline Structure ◽  
Laser Annealing ◽  
Natural Aging ◽  
Surface Layers ◽  
Near Surface ◽  
Maximum Deformation ◽  
Garnet Films ◽  
Fluorine Ions

Based on the results of X-ray structural analysis, changes in the crystalline structure during natural aging and laser annealing, which occurred in near-surface layers of epitaxial films of LaGa-substituted Iron-Yttrium Garnet, implanted by F+ ions, were studied. The processes that occur during the ion implantation by F+ in ferrite-garnet films, and the processes that accompany the low-temperature aging of ion-implanted films are considered. From the experimental rocking curves, obtained immediately after ion implantation, after the laser irradiation and after several years, strain profiles were determined. Two stages in the changes of the crystalline structure of the nearsurface disturbed layer over time are revealed. During the first of them, the maximum deformation in the ionimplanted layer increased slightly, and on the second it decreased. It was established that the results of laser annealing and natural aging of near-surface layers implanted by F+ ions and laser irradiated LaGa:YIG films  depend on the direction from which laser irradiation occurred. However, the result of their total exposure does not depend on the side of laser irradiation.

Infrared Optical Properties of Ion Implanted and Laser Annealed Silicon

1980 ◽  
Vol 1 ◽  
Author(s):  
Masanobu Miyao ◽  
Teruaki Motooka ◽  
Nobuyoshi Natsuaki ◽  
Takashi Tokuyama
Keyword(s):  
Optical Properties ◽  
Carrier Concentration ◽  
Laser Annealing ◽  
Electronic States ◽  
Free Carrier ◽  
High Dose ◽  
Carrier Relaxation ◽  
Carrier Effective Mass ◽  
Heavily Doped ◽  
Infrared Optical Properties

ABSTRACTElectronic states of extremely heavily doped n-type Si obtained by high dose ion implantation and laser annealing are investigated by measuring the infrared optical properties. Free carrier effective mass (m*) and carrier relaxation time (τ) are obtained as a function of carrier concentration (1019−5×1021 cm−3). Values of m* and τ increase and decrease, respectively, with the increase of carrier concentration. These results are discussed in relation to the occupation of electrons in a new valley of the conduction band.

SIMS Investigation of Gex(4H-SiC)1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2

2009 ◽  
Vol 615-617 ◽  
pp. 465-468
Author(s):  
Hervé Peyre ◽  
Jörg Pezoldt ◽  
M. Voelskow ◽  
Wolfgang Skorupa ◽  
Jean Camassel
Keyword(s):  
Ion Implantation ◽  
Solid Solutions ◽  
Depth Distribution ◽  
High Dose ◽  
Measurement Results ◽  
Very High

A detailed investigation of the Ge concentration in implanted samples has been carried out by SIMS and the effects affecting the depth distribution and measurement results have been determined. It is found that the MCs+ SIMS technique is best suited to investigate Gex(4H-SiC)1-x solid solutions up to x=0.2, while the O2+ SIMS configuration is limited to x=0.1. The Ge concentrations obtained by SIMS are very close to the nominal values. On the opposite, performing a comparison with previous RBS data, we find that the RBS values are systematically underestimated by ~30%. Finally, at very high dose, we find that some of the implanted species are lost by recoil and sputtering effects.

Redistribution and precipitation of dopant on thermal annealing of bismuth implanted silicon

1983 ◽  
Vol 41 ◽  
pp. 126-127
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
O. W. Holland
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Cross Section ◽  
Solid Solutions ◽  
Annealing Temperature ◽  
High Dose ◽  
Extended Defects ◽  
High Concentration ◽  
Equilibrium Solubility ◽  
Original Surface

Ion implantation above a certain dose leads to the formation of amorphous layers, which if recrystallized under interface-controlled growth at 450-600°C, result in solid solutions far exceeding the equilibrium solubility limits. In this investigation, we have annealed high-dose implanted specimens at 1000°C for one hour to study the redistribution and precipitation of dopant due to the presence of extended defects.Figure 1 shows a cross section TEM image taken near the [01] Si pole of (100)Si implanted with 209Bi+ (250 KeV, 5 x 1015 cm−2) and annealed (1000°C, 1 hr). As well as a band of precipitates typically 5 nm in size centered at a depth of 100 nm there are some much larger precipitates (28 nm in size) at the original surface of the silicon. These show a curved meniscus protruding out of the surface since the bismuth is liquid at the annealing temperature. These precipitates are located on twins suggesting that the dopant has diffused along the twin boundaries from the band of high concentration to the surface.

Solid solubility of As in Si as determined by ion implantation and cw laser annealing

1979 ◽  
Vol 35 (7) ◽  
pp. 532-534 ◽  
Author(s):  
A. Lietoila ◽  
J. F. Gibbons ◽  
T. J. Magee ◽  
J. Peng ◽  
J. D. Hong
Keyword(s):  
Ion Implantation ◽  
Solid Solubility ◽  
Laser Annealing ◽  
Cw Laser

Cw Laser Annealing of Ion Implanted Oxidized Silicon Layers on Sapphire

1982 ◽  
Vol 13 ◽  
Author(s):  
G. Alestig ◽  
G. HolmÉn ◽  
S. Peterström
Keyword(s):  
Hall Effect ◽  
Laser Irradiation ◽  
Oxide Layer ◽  
Laser Power ◽  
Laser Annealing ◽  
Oxide Thickness ◽  
Sheet Resistivity ◽  
High Activation ◽  
Cw Laser ◽  
Hall Effect Measurements

ABSTRACTCW laser annealing has been performed on silicon on sapphire (SOS) implanted with boron or phosphorus ions to a dose of 1015 ions/cm2 . The laser irradiation was done both with and without an oxide layer on top of the silicon and from both the silicon and the sapphire side. Sheet resistivity and Hall effect measurements were used for the analysis of the samples. Good annealing and high activation of the dopants were obtained for both oxidized and unoxidized SOS. For samples irradiated from the silicon side, the needed laser power changed depending on the thickness of the oxide. For samples irradiated from the sapphire side, the needed laser power was independent of oxide thickness.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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