Crystallographic Aspects of Ferroelectric Pzt Thin Films Prepared by Laser Deposition Technique

1991 ◽  
Vol 243 ◽  
Author(s):  
Winnie Wong-Ng ◽  
Ting C. Huang ◽  
Lawrence P. Cook ◽  
Peter K. Schenck ◽  
M.D. Vaudin ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Strain ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Peak Splitting ◽  
Diffraction Peaks ◽  
Diffraction Patterns

AbstractX-ray diffraction techniques were used to study the crystallography of PZT thin films prepared by the laser deposition technique. This investigation included identification of phases formed during the annealing process and also the analysis of the profiles of selected diffraction peaks. The PZT films annealed below 800°C typically showed powder x-ray diffraction patterns corresponding to a cubic structure (i.e no peak splitting) instead of the tetragonal patterns characteristic of the target materials. The upper bound contribution of the macro and micro strain to the observed X-ray peak profile and positions was estimated. It was believed that the combined effect of small crystallite size together with residual strain, and possible local inhomogeneity gave rise to the broadening and displacement of the x-ray peaks, which subsequently masked off the splittings. At this stage the physical effect of high temperature annealing is not known. It is possible that as the annealing temperature increased, grain growth took place along with relaxation of residual strain, allowing peak splitting to be observed.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

2005 ◽  
Vol 19 (01n03) ◽  
pp. 533-535
Author(s):  
J. H. HAO ◽  
J. GAO
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Perovskite Oxide ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

Powder X-Ray Diffraction Characterization of Laser Deposited Ferroelectric Thin Films

1991 ◽  
Vol 35 (A) ◽  
pp. 211-220
Author(s):  
W. Wong-Ng ◽  
T.C. Huang ◽  
L.P. Cook ◽  
P.K. Schenck ◽  
M.D. Vaudin ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Analytical Techniques ◽  
Surface Strain ◽  
Tetragonal Symmetry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Splitting ◽  
Pzt Films ◽  
Diffraction Patterns

AbstractThin films of BaTiO3 and Pb(Zr53 Ti47)O3 (PZT) have been deposited on Pt and Pt-coated silicon substrates using both Nd-YAG and excimer lasers. The BaTiO3 films were prepared using heated substrates and were crystalline. The PZT films were deposited at room temperature and were amorphous; on annealing, they crystallized and gave rise to well-defined powder x-ray diffraction patterns.To compare and correlate the properties and processing conditions of these thin films, characterizations were performed using a variety of analytical techniques including x-ray diffraction, TEM, SEM/EDX and ferroelectric and dielectric property measurements. The x-ray diffraction technique was used for identifying the various phases formed and also for analyzing the profiles of the diffraction peaks. Both the PZT films annealed below 800°C and the BaTiO3 films typically show polycrystalline x-ray diffraction patterns corresponding to a pseudo-cubic structure (i.e no peak splitting) instead of the tetragonal patterns characteristic of the target materials. It was found that for the BaTiO3 films the pseudosymmetry was due to crystallographic alignment of the longer c-axis In the substrate surface to relieve strain. In the FZT films annealed below 900°C, it is suggested that the residual surface strain and/or small crystallite size of these materials may have precluded the peak splitting; at higher annealing temperatures, the tetragonal symmetry was recovered.

Preparation and microstructural characterization of Si(100) Ce1−x GdxO2−δ thin films prepared by pulsed laser deposition technique

2014 ◽  
Vol 32 (4) ◽  
pp. 541-546 ◽  
Author(s):  
P. Nagaraju ◽  
Y. Vijayakumar ◽  
D. Phase ◽  
V. Reddy ◽  
M. Ramana Reddy
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Microstructural Characterization ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Krf Excimer Laser

AbstractMicrostructural properties of Ce1-x GdxO2-δ (x = 0 to 0.3) thin films prepared by pulsed laser deposition technique were studied. The thin films were deposited on Si(100) substrate at a substrate temperature of 973 K at the oxygen partial pressure of 0.2 Pa using KrF excimer laser with energy of 220 mJ. The prepared thin films were characterized by X-ray diffraction, Raman spectroscopy and atomic force microscopy. X-ray diffraction analysis confirmed the polycrystalline nature of the thin films. Crystallite size, strain and dislocation density were calculated. The Raman studies revealed the formation of Ce-O with the systematic variation of peak intensity and full width half maxima depending on concentration of gadolinium dopant. The thickness of the films was estimated using Talystep profiler. The surface roughness was estiamted based on AFM.

scholarly journals Laser energy effect on the properties of ZnS thin films prepared by PLD technique

2019 ◽  
Vol 11 (21) ◽  
pp. 84-90
Author(s):  
Esraa K. Hamed
Keyword(s):  
Thin Films ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Energy Effect ◽  
X Ray ◽  
Glass Substrates ◽  
Atomic Force

Zinc sulfide (ZnS) thin films were deposited on glass substrates using pulsed laser deposition technique. The laser used is the Q-switched Nd: YAG laser with 1064nm wavelength and 1Hz pulse repetition rate and varying laser energy 700mJ-1000mJ with 25 pulse. The substrate temperature was kept constant at 100°C. The structural, morphological and optical properties of ZnS thin films were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM) and UV-VIS spectrophotometer.

Control of the phase composition of advanced calcium phosphates using an x-ray diffractometer with a curved position-sensitive detector

2020 ◽  
Vol 86 (6) ◽  
pp. 29-35
Author(s):  
V. P. Sirotinkin ◽  
O. V. Baranov ◽  
A. Yu. Fedotov ◽  
S. M. Barinov
Keyword(s):  
Phase Composition ◽  
Calcium Phosphates ◽  
Position Sensitive Detector ◽  
Sensitive Detector ◽  
X Ray Diffraction ◽  
X Ray ◽  
Impurity Phases ◽  
Position Sensitive ◽  
Diffraction Peaks ◽  
Diffraction Patterns

The results of studying the phase composition of advanced calcium phosphates Ca10(PO4)6(OH)2, β-Ca3(PO4)2, α-Ca3(PO4)2, CaHPO4 · 2H2O, Ca8(HPO4)2(PO4)4 · 5H2O using an x-ray diffractometer with a curved position-sensitive detector are presented. Optimal experimental conditions (angular positions of the x-ray tube and detector, size of the slits, exposure time) were determined with allowance for possible formation of the impurity phases during synthesis. The construction features of diffractometers with a position-sensitive detector affecting the profile characteristics of x-ray diffraction peaks are considered. The composition for calibration of the diffractometer (a mixture of sodium acetate and yttrium oxide) was determined. Theoretical x-ray diffraction patterns for corresponding calcium phosphates are constructed on the basis of the literature data. These x-ray diffraction patterns were used to determine the phase composition of the advanced calcium phosphates. The features of advanced calcium phosphates, which should be taken into account during the phase analysis, are indicated. The powder of high-temperature form of tricalcium phosphate strongly adsorbs water from the environment. A strong texture is observed on the x-ray diffraction spectra of dicalcium phosphate dihydrate. A rather specific x-ray diffraction pattern of octacalcium phosphate pentahydrate revealed the only one strong peak at small angles. In all cases, significant deviations are observed for the recorded angular positions and relative intensity of the diffraction peaks. The results of the study of experimentally obtained mixtures of calcium phosphate are presented. It is shown that the graphic comparison of experimental x-ray diffraction spectra and pre-recorded spectra of the reference calcium phosphates and possible impurity phases is the most effective method. In this case, there is no need for calibration. When using this method, the total time for analysis of one sample is no more than 10 min.

Determining the C60 molecular arrangement in thin films by means of X-ray diffraction

2011 ◽  
Vol 44 (5) ◽  
pp. 983-990 ◽  
Author(s):  
Chris Elschner ◽  
Alexandr A. Levin ◽  
Lutz Wilde ◽  
Jörg Grenzer ◽  
Christian Schroer ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Information ◽  
Grazing Incidence ◽  
Test Material ◽  
C60 Fullerene ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Arrangement ◽  
Diffraction Patterns

The electrical and optical properties of molecular thin films are widely used, for instance in organic electronics, and depend strongly on the molecular arrangement of the organic layers. It is shown here how atomic structural information can be obtained from molecular films without further knowledge of the single-crystal structure. C60 fullerene was chosen as a representative test material. A 250 nm C60 film was investigated by grazing-incidence X-ray diffraction and the data compared with a Bragg–Brentano X-ray diffraction measurement of the corresponding C60 powder. The diffraction patterns of both powder and film were used to calculate the pair distribution function (PDF), which allowed an investigation of the short-range order of the structures. With the help of the PDF, a structure model for the C60 molecular arrangement was determined for both C60 powder and thin film. The results agree very well with a classical whole-pattern fitting approach for the C60 diffraction patterns.

Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1631-1636 ◽  
Author(s):  
Boya Cui ◽  
D. Bruce Buchholz ◽  
Li Zeng ◽  
Michael Bedzyk ◽  
Robert P. H. Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Room Temperature ◽  
Storage Time ◽  
Laser Deposition ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
3Ω Method ◽  
X Ray

ABSTRACTThe cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

scholarly journals Effect of indium content on X- ray diffraction and optical constants of InxSe1-x thin films

2019 ◽  
Vol 14 (29) ◽  
pp. 55-72
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Indium Content ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Dispersion Energy ◽  
X Ray ◽  
Evaporation Technique ◽  
High Indium Content ◽  
Diffraction Patterns

Alloys of InxSe1-x were prepared by quenching technique withdifferent In content (x=10, 20, 30, and 40). Thin films of these alloyswere prepared using thermal evaporation technique under vacuum of10-5 mbar on glass, at room temperature R.T with differentthicknesses (t=300, 500 and 700 nm). The X–ray diffractionmeasurement for bulk InxSe1-x showed that all alloys havepolycrystalline structures and the peaks for x=10 identical with Se,while for x=20, 30 and 40 were identical with the Se and InSestandard peaks. The diffraction patterns of InxSe1-x thin film showthat with low In content (x=10, and 20) samples have semicrystalline structure, The increase of indium content to x=30decreases degree of crystallinity and further increase of indiumcontent to x=40 leads to convert structure to amorphous. Increase ofthickness from 300 to 700nm increases degree of crystallinity for allindium content. Transmittance measurements were used to calculaterefractive index n and the extinction coefficient k using Swanepole’smethod. The optical constants such as refractive index (n), extinctioncoefficient (k) and dielectric constant (εr, εi) increases for low indiumcontent samples and decreases for high indium content samples,while increase of thickness increases optical constants for all xvalues. The oscillator energy E0, dispersion energy Ed, and otherparameters have been determined by Wemple - DiDomenico singleoscillator approach.

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