Optical Studies of Electroluminescent Structures from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
J. F. Harvey ◽  
R. A. Lux ◽  
D. C. Morton ◽  
G. F. McLane ◽  
R. Tsu
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Spectral Peak ◽  
Electrical Excitation ◽  
Silicon Structure ◽  
Electrical Measurements ◽  
Optical Studies ◽  
Light Emitting

ABSTRACTTwo components of the electroluminescence (EL) from porous silicon light emitting diode (LED) devices have been observed. A slower component and a faster component have been identified. The slower component has a spectral peak shifted to the red from the corresponding photoluminescence (PL) spectrum. The faster component has a spectral peak well in the infrared (IR). Optical and electrical measurements of these two components are discussed. The temperature dependence of the two EL components are presented and contrasted. Our measurements demonstrate that the two EL components and the PL result from recombination in different parts of the porous silicon structure. As the temperature is reduced below room temperature the slower EL exhibits a decrease in intensity at relatively high temperatures, suggesting a freeze out of electrical carriers due to quantum confinement, resulting in a much reduced electrical excitation of the EL.

Light-Emitting Porous Silicon in High Magnetic Fields

1991 ◽  
Vol 256 ◽  
Author(s):  
X. L. Zheng ◽  
H. C. Chen ◽  
W. Wang ◽  
D. Heiman
Keyword(s):  
Magnetic Field ◽  
Porous Silicon ◽  
Magnetic Fields ◽  
Conduction Electron ◽  
Quantum Confinement ◽  
Major Effect ◽  
Spectral Peak ◽  
High Magnetic Fields ◽  
Helium Atmosphere ◽  
Light Emitting

ABSTRACTPhotoluminescence from porous silicon was studied in a helium atmosphere and at high magnetic fields. In a magnetic field, the spectral peak had a negligible shift, amounting to +0.2 ±0.5 meV at B= 18T. If quantum confinement is the major effect, then the conduction electron would be confined to a diameter of less than 3.5 nm.

Can Oxidation and Other Treatments Help Us Understand the Nature of Light-Emitting Porous Silicon?

1993 ◽  
Vol 298 ◽  
Author(s):  
P.M. Fauchet ◽  
E. Ettedgui ◽  
A. Raisanen ◽  
L.J. Brillson ◽  
F. Seiferth ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Vacuum Annealing ◽  
Surface States ◽  
Careful Analysis ◽  
Experimental Results ◽  
Dangling Bonds ◽  
Light Emitting ◽  
Confinement Model

AbstractUsing a careful analysis of the properties of light-emitting porous silicon (LEpSi), we conclude that a version of the “smart” quantum confinement model which was first proposed by F. Koch et al [Mat. Res. Soc. Symp. Proc. 283, 197 (1993)] and allows for the existence of surface states and dangling bonds, is compatible with experimental results. Among the new results we present in support of this model, the most striking ones concern the strong infrared photoluminescence that dominates the room temperature cw spectrum after vacuum annealing above 600 K.

Er-Doped Porous Silicon Led For Integrated Optoelectronics

1997 ◽  
Vol 486 ◽  
Author(s):  
L. Tsybeskov ◽  
G. F. Grom ◽  
K. D. Hirschman ◽  
H. A. Lopez ◽  
S. Chan ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Light Emitting Diode ◽  
Inert Atmosphere ◽  
Light Emitting ◽  
Doped Silicon ◽  
Recombination Centers ◽  
Er Doped

AbstractPorous silicon (PSi) was doped by Er using electromigration from a solution and converted to Er-doped silicon-rich silicon oxide (SRSO:Er) by partial thermal oxidation at 600–950°C following densification at 1100°C in an inert atmosphere. Room-temperature photoluminescence (PL) at ∼1.5 μm is intense and decreases by less than 20% from 12 K to 300 K. The PL spectrum of SRSO:Er reveals no luminescence bands related to Si-bandedgerecombination, point defects or dislocations, and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of SRSO:Er was manufactured using a pre-oxidation cleaning step to increase the quality of the interface between SRSO:Er and the top electrode. Room temperature electroluminescence at ∼1.5 μm was demonstrated.

Ultraviolet light-emitting diode-assisted highly sensitive room temperature NO2 gas sensor for low-temperature solution-processed ZnO/TiO2 nanorods decorated with plasmonic Au nanoparticles

Nanoscale ◽  
2021 ◽  
Author(s):  
Soon-Hwan Kwon ◽  
Tae-Hyeon Kim ◽  
Sang-Min Kim ◽  
Semi Oh ◽  
Kyoung-Kook Kim
Keyword(s):  
Gas Sensors ◽  
High Performance ◽  
Room Temperature ◽  
Au Nanoparticles ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
No2 Gas Sensor ◽  
Highly Sensitive ◽  
Temperature Solution ◽  
Semiconducting Metal Oxides

Nanostructured semiconducting metal oxides such as SnO2, ZnO, TiO2, and CuO have been widely used to fabricate high performance gas sensors. To improve the sensitivity and stability of gas sensors,...

scholarly journals Room-temperature electroluminescence from germanium in an Al_03Ga_07As/Ge heterojunction light-emitting diode by Γ-valley transport

2012 ◽  
Vol 20 (14) ◽  
pp. 14921 ◽  
Author(s):  
Seongjae Cho ◽  
Byung-Gook Park ◽  
Changjae Yang ◽  
Stanley Cheung ◽  
Euijoon Yoon ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Light Emitting

scholarly journals Portable Instrument for Hemoglobin Determination Using Room-Temperature Phosphorescent Carbon Dots

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 825
Author(s):  
Fabio Murru ◽  
Francisco J. Romero ◽  
Roberto Sánchez-Mudarra ◽  
Francisco J. García Ruiz ◽  
Diego P. Morales ◽  
...  
Keyword(s):  
Carbon Dots ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Electronic System ◽  
Portable Device ◽  
Light Emitting ◽  
Current Converter ◽  
Reconfigurable Platform ◽  
Luminescence Characteristics

A portable reconfigurable platform for hemoglobin determination based on inner filter quenching of room-temperature phosphorescent carbon dots (CDs) in the presence of H2O2 is described. The electronic setup consists of a light-emitting diode (LED) as the carbon dot optical exciter and a photodiode as a light-to-current converter integrated in the same instrument. The reconfigurable feature provides adaptability to use the platform as an analytical probe for CDs coming from different batches with some variations in luminescence characteristics. The variables of the reaction were optimized, such as pH, concentration of reagents, and response time; as well as the variables of the portable device, such as LED voltage, photodiode sensitivity, and adjustment of the measuring range by a reconfigurable electronic system. The portable device allowed the determination of hemoglobin with good sensitivity, with a detection limit of 6.2 nM and range up to 125 nM.

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

scholarly journals Highly Efficient Room Temperature Spin Injection in a Metal-Insulator-Semiconductor Light-Emitting Diode

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L502-L504 ◽  
Author(s):  
Pol Van Dorpe ◽  
Vasyl F. Motsnyi ◽  
Mayke Nijboer ◽  
Etienne Goovaerts ◽  
Viacheslav I. Safarov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Highly Efficient

Excitonic blue luminescence from p-LaCuOSe∕n-InGaZn5O8 light-emitting diode at room temperature

2005 ◽  
Vol 87 (21) ◽  
pp. 211107 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Toshio Kamiya ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Blue Luminescence ◽  
Light Emitting
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