Reactive ion Etching of Pt/PbZrxTi1−xO3/Pt Integrated Ferroelectric Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
J.J. Van Glabbeek ◽  
G.A.C.M. Spierings ◽  
M.J.E. Ulenaers ◽  
G.J.M. Dormans ◽  
P.K. Larsen
Keyword(s):  
Etch Rate ◽  
Gas Flow ◽  
Reactive Ion Etching ◽  
Flow Ratio ◽  
Ion Etching ◽  
Ferroelectric Capacitor ◽  
Chemical Enhancement ◽  
Gas Flow Ratio ◽  
Ar Gas ◽  
Ferroelectric Capacitors

AbstractDry etching of a Pt/PbZrxTi1−xO3/Pt (Pt/PZT/Pt) ferroelectric capacitor stack with CF4/Ar plasmas with a reactive ion etching process for the fabrication of micrometer-sized integrated ferroelectric capacitors is described. The etch rate for both Pt and PZT is determined as a function of the process settings: Power, pressure and CF4-Ar gas flow ratio. A chemical enhancement of the etch rate is found for PZT. It is shown that it is possible to etch the Pt/PZT/Pt ferroelectric capacitor stack in a CF4/Ar plasma in a single lithographic process using patterning by photoresist masking. Redeposition processes occurring during etching are described.

Reactive Ion Etching of TaSix in a CF4-O2 Discharge

1991 ◽  
Vol 240 ◽  
Author(s):  
C. P. Chen ◽  
K. S. Din ◽  
F. S. Huang
Keyword(s):  
Total Pressure ◽  
Etch Rate ◽  
Gas Flow ◽  
Reactive Ion Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Gaas Mesfet ◽  
Maximum Value ◽  
Oxygen Percentage ◽  
Sem Micrograph

ABSTRACTIn the self-alignment technology for GaAs MESFET, the pattern technique for refractory suicide gate is needed. Reactive ion etching (RIE) of TaSix on GaAs has been performed in a mixture of CF4 and O2 Etching properties have been studied as function of oxygen percentage, total pressure and power. The samples were then examined in Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to understand the surface morphology and constitution. It is found that the etch rate of TaSixincreased with increasing oxygen percentage initially, reached a maximum value near 10∼15% O2, then started to decrease with increasing oxygen at applied power 100 watt, pressure 50 mtorr, and total gas flow 40 seem. This etch rate also increases with RF power and total pressure in CF4 + O2 15% gas at gas flow rate 40 sccm. For GaAs etching, the rate is independent of oxygen percentage. This etch rate of GaAs also increases with power, but decreases with total pressure. Meanwhile, the SEM micrograph shows no undercut for sample after RIE at the applied power 140 watt with the pressure of 20 mtorr.

Dependence of Electrical and Optical Properties of the Al Doped ZnO for Transparent Conductors Deposited by rf–Magnetron Sputtering on the O2/Ar Gas Flow Ratio

2007 ◽  
Vol 336-338 ◽  
pp. 564-566 ◽  
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Choong Mo Kim
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Magnetron Sputter Deposition ◽  
Ar Gas

ZnO:Al thin films were deposited on sapphire(001) substrates by RF magnetron sputtering. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of the films were investigated. AFM analysis results show that the surface roughness is lowest at the O2/Ar flow ratio of 0.5 and tends to increase owing to the increase of the grain size as the O2/Ar flow ratio increases further than 0.5. According to the Hall measurement results the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the film tends to increase as the O2/Ar gas flow ratio increases up to 0.5 but it nearly does not change with continued increases in the O2/Ar flow ratio. Considering the effects of the the O2/Ar flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

Effect of CHF3/Ar Gas Flow Ratio on Self-masking Subwavelength Structures Prepared on Fused Silica Surface

2018 ◽  
Vol 33 (2) ◽  
pp. 349-355
Author(s):  
Jingjun Wu ◽  
Xin Ye ◽  
Jin Huang ◽  
Laixi Sun ◽  
Yong Zeng ◽  
...  
Keyword(s):  
Gas Flow ◽  
Silica Surface ◽  
Fused Silica ◽  
Subwavelength Structures ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Ar Gas

Plasma Etching of SiO2 with CF3I Gas in Plasma-Enhanced Chemical Vapor Deposition Chamber for In-Situ Cleaning

2019 ◽  
Vol 11 (12) ◽  
pp. 1667-1672
Author(s):  
Jin-Seong Park ◽  
In-Sung Park ◽  
Seon Yong Kim ◽  
Taehoon Lee ◽  
Jinho Ahn ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Vapor Deposition ◽  
Etch Rate ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Flow Ratio ◽  
Deposition Chamber ◽  
Gas Flow Ratio ◽  
Chamber Temperature

Non-global-warming CF3I gas has been investigated as a removal etchant for SiO2 film. Thermally fabricated SiO2 films were etched by the plasma generated with a gas mixture of CF3I and O2 (CF3I/O2) in the plasma-enhanced chemical vapor deposition chamber. The etch rate of SiO2 films was studied along with the process parameters of plasma etching such as chamber pressure, etching gas flow ratio of CF3I to CF3I/O2, plasma power, and chamber temperature. Increasing the chamber pressure from 400 to 1,000 mTorr decreased the etch rate of SiO2 film. The etch rate of this film showed a minimum value at a gas flow ratio of 0.71 in CF3I to CF3I/O2 and then increased at a higher CF3I gas flow ratio. In addition, the elevated plasma power increased the etch rate. However, the chamber temperature has little effect on the etch rate of SiO2 films. When only CF3I gas without O2 was supplied for etching, polymerized fluorocarbon was formed on the surface, indicating the role of oxygen in ashing the polymerized fluorocarbon during the etching process.

Reactive Ion Etching of CVD Diamond in CF4/O2, O2 and O2/Ar Plasmas

2000 ◽  
Vol 622 ◽  
Author(s):  
Patrick W. Leech ◽  
Geoffrey K. Reeves ◽  
Anthony S. Holland
Keyword(s):  
Bias Voltage ◽  
Chemical Etching ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Cvd Diamond ◽  
Flow Ratio ◽  
Ion Etching ◽  
Physical Sputtering ◽  
High Etch Rate ◽  
Low Rate

ABSTRACTThe reactive ion etching of diamond in O2, CF4/O2, CHF3/O2, O2/Ar) discharges has been examined as a function of bias voltage, flow rate and composition of the gas mixtures. Etching in O2 and O2/Ar plasmas (with flow ratio of O2/Ar >25% ) was characterised by a high etch rate (∼35 nm/min) and an increase in surface roughness with rising bias voltage. The CF4/O2 plasmas also produced a high etch rate (∼50 nm/min) but with only minor dependence of roughness on bias voltage. In comparison, the O2/Ar (with O2/Ar flow ratio <25%) and CHF3/O2 plasmas resulted in a low etch rate (7-10 nm/min). The high and low rate regimes were identified as ion- enhanced chemical etching and physical sputtering respectively. Etching in the O2/Ar plasmas has been attributed to a combination of the two processes dependent on the O2 content.

Effect of O2/Ar gas flow ratio on the optical properties and mechanical stress of sputtered HfO2 thin films

2015 ◽  
Vol 592 ◽  
pp. 135-142 ◽  
Author(s):  
S. Jena ◽  
R.B. Tokas ◽  
J.S. Misal ◽  
K.D. Rao ◽  
D.V. Udupa ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Mechanical Stress ◽  
Gas Flow ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Ar Gas
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