Effect of Rapid Thermal Processing on the Crystallization Properties of PbTiO3 Ferroelectric Thin Film

1996 ◽  
Vol 433 ◽  
Author(s):  
Jianguo Zhu ◽  
Meng Chen ◽  
Wenbing Peng ◽  
Fahua Lan ◽  
E.V. Sviridov ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Processing ◽  
Interfacial Layer ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Rapid Thermal Processing ◽  
Ferroelectric Thin Film ◽  
Processing Temperature ◽  
Time Duration

AbstractThe fabrication methods of ferroelectric (FE) thin films have received special attention in recent years because of the needs of FE thin films integrated with semiconductor devices. Rapid thermal processing (RTP) has developed in fabrication of FE thin films because it can reduce processing temperature and time duration, and it also improves the properties of FE thin films compatible with semiconductor devices. The thin film samples used were prepared by a multi-ion-beam reactive cosputtering system (MIBRECS) at room temperature. The samples were then subjected to a post-deposition annealing in a RTP system. It was found that PbTiO3 (PT) thin film could grow on amorphous or polycrystal interfacial layer and the PT thin films annealed by RTP showed the prefered [110] and [100] textures. The effect of interfacial layer on the crystallization and microstructure of the films was also discussed.

Influence of Stoichiometric Variations and Rapid Thermal Processing of β-FESI2 thin Films on their Electrical and Microstructural Properties

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Döscher ◽  
B. Selle ◽  
M. Pauli ◽  
F. Kothe ◽  
J. Szymanski ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Rf Sputtering ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Phonon Spectra ◽  
First Results

AbstractAmorphous irondisilicide thin films were deposited on silicon substrates in a RF sputtering process, followed by rapid thermal crystallization by means of moving the thin film beneath a line-shaped electron beam to form β-FeSi2. Depending on the deposition process parameters, films of a different stoichiometry can be produced. The deviations from the 1:2 stoichiometry, which have been determined by Rutherford Backscattering (RBS), are related to changes in the microstructure (studied by microscopic methods like TEM and AFM), the infrared phonon spectra (measured by FTIR spectroscopy) and the electrical properties of the crystallized films. The microstructure of the iron disilicide thin films is improved when the composition significantly deviates from 2.0, probably due to silicon interstitials in the silicide thin film. Films of different stoichiometry result in p- or n-type thin films with carrier densities below 5×1018cm−3 and hall mobilities up to 180cm 2/Vs. First results show that not only β-FeSi2-siliconheterojunctions as reported before but also pn-β-FeSi2-homojunctions show rectifying behavior. Rapid thermal processing with the line electron beam leads to a further improvement of the film quality when the scan velocity is increased up to the order of several cm/s.

Comparative Studies of Thin-Film Ti-Si and Ti-SiO2 Rapid Thermal Reactions Using the RIP/TEM Technique

1986 ◽  
Vol 74 ◽  
Author(s):  
Menachem Natan
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thermal Processing ◽  
Metal Film ◽  
Rapid Thermal Processing ◽  
Nucleation And Growth ◽  
Thin Metal Film ◽  
Processing Temperature ◽  
Thermal Reactions ◽  
Transmission Electron

AbstractOne requirement of self-aligned microelectronics metallization processes is selectivity of reactions, e.g., a deposited, thin metal film must react with Si to form a silicide, yet avoid reaction with SiO2 Rapid thermal processing (RTP) techniques may enhance selectivity by utiliz-ing differences in competing reaction kinetics. In this paper, we apply the RTP/transmission electron microscopy (RTP/TEM) technique to determine processing temperature (T)/time (t) “win-dows” for selective sulicide formation in Ti-Si vs Ti-SiO2 reactions. Free-lying Si/Ti/Si and SiO2/Ti/SiO2 films deposited on electron microscope grids were RTP'd in pairs and immediately examined by TEM. The products of the interfacial reactions, their sequence of appearance, and the T/t conditions for silicide nucleation and growth in each system are described.

Ion Beam Modification of Film Stress and the Effectiveness of Thin Film Encapsulants on GaAs

1988 ◽  
Vol 100 ◽  
Author(s):  
T. E. Haynes ◽  
S. T. Picraux ◽  
S. R. Lee ◽  
W. K. Chu
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Thermal Processing ◽  
Mechanical Stability ◽  
Ion Beam ◽  
Rapid Thermal Processing ◽  
Film Stress ◽  
Ion Beam Modification ◽  
Stress Changes ◽  
As Stress

ABSTRACTIon implantation has been used to modify the initial stress in thin (40 nm) SiO2 films on G a As, and to condition the SiO2-G a As interface to pro mote adhesion. The effectiveness of these implanted films as caps to suppress decomposition of GaAs during rapid thermal processing has been studied, and this provides an indicator of the mechanical stability of the films. Measurements of the initial film stress, as well as stress changes caused by implantation and annealing, have been made to help interpret the implantation results. Our results indicate that ion implantation does not have a strong effect on the performance of thin film SiO2 encapsulants on GaAs.

Growth of AZTSe thin films by rapid thermal processing and numerical simulation of p-CZTSe/n-AZTSe thin film heterojunction

2021 ◽  
Vol 127 (4) ◽  
Author(s):  
Rhishikesh Mahadev Patil ◽  
G. Hema Chandra ◽  
Y. P. Venkata Subbaiah ◽  
P. Prathap ◽  
Mukul Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Numerical Simulation ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lateral Diffusion ◽  
Lateral Growth ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Planar Configuration ◽  
20 Nm

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

Rapid thermal processing of zirconia thin films produced by the sol‐gel method

1991 ◽  
Vol 70 (4) ◽  
pp. 2348-2352 ◽  
Author(s):  
R. Pascual ◽  
M. Sayer ◽  
C. V. R. Vasant Kumar ◽  
Lichun Zou
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Gel Method ◽  
Sol Gel Method

Effects of doping and rapid thermal processing in Y doped CdO thin films

2019 ◽  
Vol 776 ◽  
pp. 259-265 ◽  
Author(s):  
Mengting Xie ◽  
Wei Zhu ◽  
Kin Man Yu ◽  
Zishu Zhu ◽  
Guanzhong Wang
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Cdo Thin Films

scholarly journals Rapid thermal processing of self-assembling block copolymer thin films

2013 ◽  
Vol 24 (31) ◽  
pp. 315601 ◽  
Author(s):  
F Ferrarese Lupi ◽  
T J Giammaria ◽  
M Ceresoli ◽  
G Seguini ◽  
K Sparnacci ◽  
...  
Keyword(s):  
Thin Films ◽  
Block Copolymer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Self Assembling
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