Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

1998 ◽  
Vol 532 ◽  
Author(s):  
M. Kase ◽  
Y Kikuchi ◽  
H. Niwa ◽  
T. Kimura
Keyword(s):  
Junction Depth ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Junction Formation

ABSTRACTThis paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.

Rapid Thermal Processing and The Quest for Ultra Shallow Boron Junctions

1986 ◽  
Vol 71 ◽  
Author(s):  
Tom Sedgwick
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Attractive Potential ◽  
High Activation ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Diffusion Effects ◽  
Junction Formation ◽  
Short Time

AbstractRapid Thermal Processing (RTP) can minimize processing time and therefore minimize dopant motion during annealing of ion implanted junctions. In spite of the advantage of short time annealing using RTP, the formation of shallow B junctions is thwarted by channeling, transient enhanced diffusion and concentration enhanced diffusion effects all of which lead to deeper B profiles. Channeling and transient enhanced diffusion can be avoided by preamorphizing the silicon before the B implant. However, defects at the original amorphous/crystal boundary persist after annealing. Very low energy B implantation can lead to very shallow dopant profiles and in spite of channeling effects, offers an attractive potential shallow junction technology. In all of the shallow junction formation techniques RTP is required to achieve both high activation of the implanted species and minimal diffusion of the implanted dopant.

Ultra Shallow Junction Formation for 80 nm CMOS by Controlling Transient Enhanced Diffusion

2000 ◽  
Author(s):  
K. Ohuchi ◽  
K. Adachi ◽  
A. Murakoshi ◽  
A. Hokazono ◽  
T. Kanemura ◽  
...  
Keyword(s):  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Junction Formation

Transient-enhanced diffusion in shallow-junction formation

2002 ◽  
Vol 31 (10) ◽  
pp. 999-1003 ◽  
Author(s):  
A. T. Fiory ◽  
S. G. Chawda ◽  
S. Madishetty ◽  
V. R. Mehta ◽  
N. M. Ravindra ◽  
...  
Keyword(s):  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Junction Formation

Investigation of Lateral and Vertical Profiles Enhanced by Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Mineji ◽  
K. Hamada ◽  
S. Saito
Keyword(s):  
Point Defects ◽  
Diffusion Control ◽  
High Dose ◽  
Vertical Profiles ◽  
Junction Depth ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Junction Formation ◽  
D Region ◽  
High Dose Implantation

AbstractIn shallow junction formation with junction depth below 0.1μm, enhanced diffusion control is essential. The purpose of this paper is to investigate the B enhanced diffusion by point defects, introduced by high dose implantation with amorphization. Ge ions were implanted to induce amorphization within the S/D region of pMOS. These results were compared with that of the B enhanced diffusion by point defects, induced by Si+ implant with non-amorphization. These results suggest that the B enhanced diffusion in lateral profiles is much smaller, compared with that in vertical profiles, when point defects were introduced by amorphization.

Effects of Carbon Co-Implantation on Transient Enhanced Diffusion and Performances of the Phosphorus Doped Ultra-Shallow Junction Nano NMOSFET

2013 ◽  
Vol 284-287 ◽  
pp. 98-102
Author(s):  
Hung Yu Chiu ◽  
Yean Kuen Fang ◽  
Feng Renn Juang
Keyword(s):  
Cmos Technology ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Technology Applications ◽  
Implantation Process ◽  
Phosphorus Doped

The carbon (C) co-implantation and advanced flash anneal were employed to form the ultra shallow junction (USJ) for future nano CMOS technology applications. The effects of the C co-implantation process on dopant transient enhanced diffusion (TED) of the phosphorus (P) doped nano USJ NMOSFETs were investigated in details. The USJ NMOSFETs were prepared by a foundry’s 55 nano CMOS technology. Various implantation energies and doses for both C and P ions were employed. Results show the suppression of the TED is strongly dependent on both C and P implantation conditions. Besides, the mechanisms of P TED and suppression by C ion co-implantation were illustrated comprehensively with schematic models.

Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications

1997 ◽  
Vol 469 ◽  
Author(s):  
N. E. B. Cowern ◽  
E. J. H. Collart ◽  
J. Politiek ◽  
P. H. L. Bancken ◽  
J. G. M. Van Berkum ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Crystalline Silicon ◽  
Cmos Technology ◽  
Low Energy ◽  
Defect Engineering ◽  
Enhanced Diffusion ◽  
Physical Mechanisms ◽  
Transient Enhanced Diffusion ◽  
Junction Formation ◽  
Silicon Cmos

ABSTRACTLow energy implantation is currently the most promising option for shallow junction formation in the next generations of silicon CMOS technology. Of the dopants that have to be implanted, boron is the most problematic because of its low stopping power (large penetration depth) and its tendency to undergo transient enhanced diffusion and clustering during thermal activation. This paper reports recent advances in our understanding of low energy B implants in crystalline silicon. In general, satisfactory source-drain junction depths and sheet resistances are achievable down to 0.18 micron CMOS technology without the need for implantation of molecular species such as BF2. With the help of defect engineering it may be possible to reach smaller device dimensions. However, there are some major surprises in the physical mechanisms involved in implant profile formation, transient enhanced diffusion and electrical activation of these implants, which may influence further progress with this technology. Some initial attempts to understand and model these effects will be described.

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