High Throughput X-ray Diffractometer for Combinatorial Epitaxial Thin Films

2001 ◽  
Vol 700 ◽  
Author(s):  
M. Ohtani ◽  
T. Fukumura ◽  
A. Ohtomo ◽  
T. Kikuchi ◽  
K. Omote ◽  
...  
Keyword(s):  
Thin Films ◽  
High Throughput ◽  
Epitaxial Thin Films ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Heating Method ◽  
X Ray ◽  
Spatially Resolved ◽  
Diffraction Angle

AbstractWe report on the development of a high throughput x-ray diffractometer that concurrently measures spatially resolved x-ray diffraction (XRD) spectra of epitaxial thin films integrated on a substrate. A convergent x-ray is focused into a stripe on a substrate and the diffracted beam is detected with a two-dimensional x-ray detector, so that the snapshot image represents a mapping of XRD intensity with the axes of the diffraction angle and the position in the sample. High throughput characterization of crystalline structure is carried out for a BaxSr1-xTiO3 composition-spread film on a SrTiO3 substrate. Not only the continuous spread of the composition (x), but also the continuous spread of the growth temperature (T) are given to the film by employing a special heating method. The boundary between the strained lattice and relaxed lattice is visualized by the concurrent XRD as functions of x and T in a high throughput fashion.

Synthesis, Structures, and Physical Properties of Yttrium-Doped Strontium Manganese Oxide Films

2002 ◽  
Vol 718 ◽  
Author(s):  
Andrew J. Francis ◽  
Paul A. Salvador
Keyword(s):  
Thin Films ◽  
Manganese Oxide ◽  
Alkaline Earth ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
X Ray ◽  
Synthesis Conditions ◽  
Colossal Magnetoresistive

AbstractCubic strontium manganese oxide is an end-member of the colossal magnetoresistive (CMR) family of manganese-based perovskites, Ln1-xAExMnO3. Because normal synthesis conditions lead to the 4-H hexagonal polymorph, high-pressure conditions are typically used to obtain the cubic perovskite polymorph. In this work, we describe the synthesis and structural/physical characterization of the cubic perovskite form of the high-alkaline-earth containing phases of Y1-xSrxMnO3 (x ≥ 0.7) as epitaxial thin films. Thin films of various stoichiometries were grown on single-crystal perovskite substrates SrTiO3, NdGaO3, and LaAlO3 using pulsed laser deposition. After optimizing deposition conditions, the perovskite polymorph is obtained using PLD at 800°C and 10-100 mTorr O2 for x=1, 0.9, 0.8, and 0.7, as demonstrated by x-ray diffraction. Epitaxial growth was determined to be cube-on-cube. Electrical property measurements demonstrated insulating behavior and no metal-insulator transition or magnetoresistive behavior, similar to related stable compounds.

One Step Synthesis and Characterization of Zirconia-Graphene Composites

2012 ◽  
Vol 600 ◽  
pp. 174-177 ◽  
Author(s):  
Jian Fei Xia ◽  
Zong Hua Wang ◽  
Yan Zhi Xia ◽  
Fei Fei Zhang ◽  
Fu Qiang Zhu ◽  
...  
Keyword(s):  
Synthesis And Characterization ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
X Ray ◽  
Graphene Composite ◽  
Transmission Electron ◽  
One Step ◽  
Ft Ir ◽  
Xrd Techniques

Zirconia-graphene composite (ZrO2-G) has been successfully synthesized via decomposition of ZrOCl2•6H2O in a water-isopropanol system with dispersed graphene oxide (GO) utilizing Na2S as a precursor could enable the occurrence of the deposition of Zr4+ and the deoxygenation of GO at the same time. Transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR) and X-ray diffraction (XRD) techniques were used to characterize the samples. It was found that graphene were fully coated with ZrO2, and the ZrO2 existing in tetragonal phase, which resulted in the formation of two-dimensional composite.

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

scholarly journals Characterization of superconducting oxide thin films by X-ray diffraction.

1990 ◽  
Vol 37 (1) ◽  
pp. 141-144
Author(s):  
Tsunekazu Iwata ◽  
Akihiko Yamaji ◽  
Youichi Enomoto
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray

Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers

2005 ◽  
Vol 892 ◽  
Author(s):  
Qianghua Wang ◽  
Jianzeng Xu ◽  
Changhe Huang ◽  
Gregory W Auner
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Ultrasonic Transducers ◽  
X Ray Diffraction ◽  
Effective Coupling ◽  
Resonant Frequencies ◽  
X Ray ◽  
Coupling Factors ◽  
Sandwiched Structure

AbstractThis paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.

Sign in / Sign up

Export Citation Format

Share Document