The Effect of Annealing on High-resistivity and Semi-insulating 4H-SiC

2002 ◽  
Vol 742 ◽  
Author(s):  
S. R. Smith ◽  
A. O. Evwaraye ◽  
W. C. Mitchel
Keyword(s):  
Transition Metal ◽  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Deep Levels ◽  
High Resistivity ◽  
Admittance Spectroscopy ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Before And After

ABSTRACTWe have examined specimens of high-resistivity, and semi-insulating, 4H-SiC before and after thermal annealing at 1600 °C, using Optical Admittance Spectroscopy. We have found enhanced ultraviolet response in most specimens. Enhanced activation of previously undetected V impurities has also been observed. Peaks believed to be attributable to complex V-related defects were greatly reduced by annealing. The annealing was in addition to a thermal oxidation at 1150 °C for 4 hours. The purpose of the oxidation was to remove surface-related deep levels known to be present in polished SiC. Transition metal impurities in these bulk specimens were quantified by SIMS. In specimens where Ti was not detected by SIMS, no further activation of Ti centers was detected by Optical Admittance Spectroscopy.

Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy

1994 ◽  
Vol 339 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel
Keyword(s):  
Transition Metal ◽  
Single Crystals ◽  
Admittance Spectroscopy ◽  
Donor Atom ◽  
Deep Defect ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Defect Levels ◽  
Type Conduction

ABSTRACTOptical admittance spectroscopy is a technique for measuring the conductance and capacitance of a junction under illumination as a function of the wavelength of the light and the frequency of the measuring AC signal. This technique has been applied to characterize deep defect levels in 6H-SiC:N. Nitrogen is a donor atom in 6H-SiC which substitutes for carbon in three inequivalent sites (h, k1, k2). giving rise to n-type conduction. Deep defect levels attributable to transition metal impurities have also been identified in 6H-SiC:N. We have examined persistent photoconductance in this material by optical admittance spectroscopy.

Electrical and optical properties of p-GaN films implanted with transition metal impurities

2005 ◽  
Vol 2 (7) ◽  
pp. 2520-2524 ◽  
Author(s):  
A.Y. Polyakov ◽  
N.B. Smirnov ◽  
A.V. Govorkov ◽  
Rohit Khanna ◽  
S.J. Pearton
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Electrical And Optical Properties ◽  
Metal Impurities ◽  
Transition Metal Impurities

Diffusion of transition-metal impurities in silicon

2007 ◽  
Vol 401-402 ◽  
pp. 151-154 ◽  
Author(s):  
K. Matsukawa ◽  
K. Shirai ◽  
H. Yamaguchi ◽  
H. Katayama-Yoshida
Keyword(s):  
Transition Metal ◽  
Metal Impurities ◽  
Transition Metal Impurities
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