Structural Characterization of MBE Grown (001) CdTe Films by Means of Transmission Electron Microscopy, Low Temperature Photoluminescence and Double Crystal Rocking Curves.

1986 ◽  
Vol 77 ◽  
Author(s):  
M. G. Burke ◽  
W. J. Choyke ◽  
N. J. Doyle ◽  
Z. C. Feng ◽  
M. H. Hanes ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Milling ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Line Defects ◽  
Cdte Films ◽  
Means Of Transmission ◽  
Low Temperature Photoluminescence

ABSTRACTThe effects of chemical etching, mechanical thinning, and ion milling on the low temperature photoluminescence spectra of MBE grown (001) CdTe films are reported. Line defects observed by TEM are correlated with photoluminescence. It is shown that X-ray D.C.R.C, measurements in these films are weighted averages over the whole thickness of the films and therefore weakly reflect the structural perfection of the samples near the surface as deduced by photoluminescence.

Ultraviolet photon-induced heteroepitaxy of CdTe on GaAs

1988 ◽  
Vol 3 (6) ◽  
pp. 1144-1150 ◽  
Author(s):  
N. W. Cody ◽  
U. Sudarsan ◽  
R. Solanki
Keyword(s):  
Full Width ◽  
Half Maximum ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas Substrates ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Cdte Films ◽  
The Relationship

Ultraviolet photon-induced metalorganic vapor phase epitaxy of CdTe films on GaAs substrates has been investigated using diethyltelluride and dimethylcadmium as the precursor gases. The relationship between the deposition parameters and the properties of the epilayers have been examined using transmission electron microscopy and x-ray rocking curves. Epilayers grown at 6μm/h show an x-ray double-crystal rocking curve full width at half-maximum (FWHM) of 250 arcsec.

Multi-Wavelength Ellipsometry for Effective Characterization of Thin Epitaxial Si1−xGex Layers on Silicon Substrate

1993 ◽  
Vol 298 ◽  
Author(s):  
Michael Eichler ◽  
Marita Weidner ◽  
Thomas Morgenstern
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Unknown Parameters ◽  
Double Crystal ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Multi Wavelength ◽  
Nondestructive Characterization

AbstractThe range of composition (x) is one of the parameters we often have to measure if Si1-xGex layers are generated by chemical vapour deposition (CVD). It is important in this case, in which way the optical properties of Si1-xGex layers depend on the range of composition. We are interested in using multi-wavelength ellipsometry as a technique for rapid, nondestructive characterization of these samples, without large preparations, especially for series of measurements (2D profiles or wafer-lots). The number of unknown parameters and the multiple solutions are reduced by using several wavelengths during the measurement. The calculation is prepared by the help of parameter-correlation based on results of spectroscopical ellipsometry. To examine the results, thickness and composition were controlled for selected samples by cross-sectional transmission electron microscopy (XTEM) and X-ray double crystal diffractometry (DCD).

Photoluminescence Characterization of Thin Silicon-On-Insulator Films Produced by Oxygen Implantation

1987 ◽  
Vol 107 ◽  
Author(s):  
J. Weber ◽  
H. Baumgart ◽  
J. Petruzzello ◽  
G.K. Celler
Keyword(s):  
Low Temperature ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Crystal Silicon ◽  
Czochralski Silicon ◽  
Transmission Electron ◽  
Processing Step ◽  
Low Temperature Photoluminescence

AbstractSingle crystal silicon films on top of a buried SiO2 layer were produced by implanting 1.7x10180+ions/cm2 at 150keV into (100) Czochralski silicon, followed by annealing at higher temperatures. The defect properties of the layers are studied after each processing step by low temperature photoluminescence measurements and transmission electron micrography (TEM). Dislocation-related photoluminescence signals correlate with their TEM observations in the same samples. The photoluminescence method proves to be a very versatile and convenient method for characterizing the quality of silicon-on-insulat or structures.

A TEM/Low-Temperature Photoluminescence Examination of MBE-grown (001) CdTe films

1987 ◽  
Vol 45 ◽  
pp. 348-349
Author(s):  
M.G. Burke ◽  
W.J. Choyke ◽  
Z.C. Feng ◽  
M.H. Hanes
Keyword(s):  
Low Temperature ◽  
Lattice Mismatch ◽  
Electronic Devices ◽  
Buffer Layers ◽  
Double Crystal ◽  
Rocking Curve ◽  
High Structural Perfection ◽  
Small Lattice ◽  
Cdte Films ◽  
Low Temperature Photoluminescence

CdTe, a large band gap semiconductor, is used for a variety of applications such as infrared detectors, solar cells, and other opto-electronic devices. These applications require that CdTe thin films or buffer layers are made with high structural perfection. To date, a variety of substrates have been employed in CdTe thin film production, including GaAs, sapphire, and InSb. InSb is particularly attractive due to the small lattice mismatch with CdTe across {100}. We will report results of a combined TEM/low temperature photoluminescence (LT-PL) investigation into the defect structures present in MBE grown (001) CdTe films produced on InSb substrates, and initial observations of MOCVD CdTe on CdTe substrates.Several high quality MBE CdTe/InSb specimens were initially selected based upon initial PL measurements and DCRC (double crystal rocking curve) results.

scholarly journals Fabrication and Characterization of CuInSe2Thin Film Applicable for a Solar Energy Light Absorption Material via a Low Temperature Solid State Reaction

2013 ◽  
Vol 2013 ◽  
pp. 1-7
Author(s):  
Kuo-Chin Hsu ◽  
Yaw-Shyan Fu ◽  
Pei-Ying Lin ◽  
I-Tseng Tang ◽  
Jiunn-Der Liao
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Low Temperature ◽  
Solid State Reaction ◽  
Light Absorption ◽  
Intermediate Phase ◽  
Energy Dispersive Spectrometer ◽  
X Ray ◽  
Transmission Electron

The chalcopyrite CuInSe2thin film synthesized via a low temperature solid state reaction from CuSe and InSe powders was investigated using X-ray diffractomy (XRD), scanning electron microscope (SEM), energy dispersive spectrometer (EDS), transmission electron microscopy (TEM), and UV-vis absorption spectroscopy. CuSe and InSe phases react and directly transform into CuInSe2without the occurrence of any intermediate phase. The morphology of the newly formed CuInSe2crystalline was close to that of the CuSe reactant particle based on the TEM results, which indicate that the solid state reaction kinetics may be dominated by the In3+ions diffusion. The CuInSe2thin film prepared from the solid state reaction did not use the selenide process; its band gap might reach 1.06 eV, which is competent and suitable to be used for a thin film solar cell light absorption layer.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

An Electron Microscope Study of Interdiffusion and Compound Formation in Ta-Au Thin Films

1973 ◽  
Vol 31 ◽  
pp. 32-33 ◽  
Author(s):  
T. C. Tisone ◽  
S. Lau
Keyword(s):  
Electron Microscope ◽  
Electron Microscope Study ◽  
Thermally Grown Oxide ◽  
Ion Milling ◽  
Compound Formation ◽  
Technology Application ◽  
Transmission Electron ◽  
Before And After ◽  
Au Thin Films

In a study of the properties of a Ta-Au metallization system for thin film technology application, the interdiffusion between Ta(bcc)-Au, βTa-Au and Ta2M-Au films was studied. Considered here is a discussion of the use of the transmission electron microscope(TEM) in the identification of phases formed and characterization of the film microstructures before and after annealing.The films were deposited by sputtering onto silicon wafers with 5000 Å of thermally grown oxide. The film thicknesses were 2000 Å of Ta and 2000 Å of Au. Samples for TEM observation were prepared by ultrasonically cutting 3mm disks from the wafers. The disks were first chemically etched from the silicon side using a HNO3 :HF(19:5) solution followed by ion milling to perforation of the Au side.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

scholarly journals Synthesis and characterization of Fe, Co, and Ni colloids in 2-mercaptoethanol

2020 ◽  
Vol 10 ◽  
pp. 184798042096688
Author(s):  
Galo Cárdenas-Triviño ◽  
Sergio Triviño-Matus
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Colloidal Dispersions ◽  
Synthesis And Characterization ◽  
X Ray ◽  
Transmission Electron ◽  
Vis Spectroscopy ◽  
Chemical Liquid Deposition ◽  
Liquid Deposition

Metal colloids in 2-mercaptoethanol using nanoparticles (NPs) of iron (Fe), cobalt (Co), and nickel (Ni) were prepared by chemical liquid deposition method. Transmission electron microscopy, electron diffraction, UV-VIS spectroscopy, and scanning electron microscopy with electron dispersive X-ray spectroscopy characterized the resulting colloidal dispersions. The NPs exhibited sizes with ranges from 9.8 nm for Fe, 3.7 nm for Co, and 7.2 nm for Ni. The electron diffraction shows the presence of the metals in its elemental state Fe (0), Co (0), and Ni (0) and also some compounds FeO (OH), CoCo2S4, and NiNi2S4.

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