Ruthenium as Schottky metal for SiC-based high temperature hydrogen sensors

2003 ◽  
Vol 801 ◽  
Author(s):  
S. Basu ◽  
S. Roy ◽  
C. Jacob
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Hydrogen Sensors ◽  
X Ray Diffraction ◽  
Response Characteristics ◽  
Si Substrates ◽  
No Formation ◽  
Different Temperatures ◽  
Ruthenium Silicide ◽  
Secondary Ion

ABSTRACTSensor response characteristics of Ru/3C-SiC (epitaxial layer of SiC on Si substrates) Schottky junctions were studied at different temperatures (200 – 400 °C) in presence of varying concentrations of hydrogen from 5000 – 20000 ppm. The output signal of the sensor, the response time and the reversibility were investigated from the transient response characteristics of the sensors. The sensor parameters improved with higher operating temperature, up to 400 °C. The sensitivity of the sensors was found to be a function of applied bias across the Schottky junction. As compared with the Pd/3C-SiC junctions, the Ru/3C-SiC Schottky sensors showed higher resolution and better reversibility in the hydrogen concentration range 10000 to 20000 ppm. The SIMS (Secondary Ion Mass Spectrometry), RBS (Rutherford Backscattering Spectrometry) and GIXRD (Glancing Incidence X-ray Diffraction) studies indicated that up to 400 °C there was no formation of ruthenium silicide at the Ru/3C-SiC interface.

Implantation and Activation of High Concentrations of Boron and Phosphorus in Germanium

2005 ◽  
Vol 891 ◽  
Author(s):  
Yong Seok Suh ◽  
Malcolm S. Carroll ◽  
Roland A. Levy ◽  
Gabriele Bisognin ◽  
Davide De Salvador ◽  
...  
Keyword(s):  
Peak Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Nuclear Reaction Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Concentrations ◽  
X Ray Absorption ◽  
Secondary Ion ◽  
Activation Behavior

ABSTRACTThe effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm−2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of implant dose is ∼ 2×1021 cm−3. Secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), high resolution X-ray diffraction (HRXRD), X-ray absorption fine structure (XAFS), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA) were used to characterize the implant and activation behavior. Boron is found to have a high solid solubility (i.e., > 2×1020 cm−3), even immediately after implant; while in contrast, phosphorus is limited to ∼ 1–2×1019 cm−3. Diffusion of phosphorus is also extremely extrinsic, while boron is practically immobile.

Formation of AlxOyNz Barriers for Advanced Silver Metallization

2000 ◽  
Vol 612 ◽  
Author(s):  
Y. Wang ◽  
T.L. Alford
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Diffusion Barriers ◽  
Potential Candidate ◽  
Aluminum Oxynitride ◽  
X Ray Diffraction ◽  
Cu Metallization ◽  
Si Substrates ◽  
Additional Layer ◽  
No Formation ◽  
Thin Aluminum

AbstractSilver has been explored as a potential candidate for future advanced interconnects due to its lowest electrical resistivity, when compared with Al and Cu. As in the case of Cu metallization, an additional layer between the Ag film and underneath dielectric is necessary in order to improve adhesion and to block the diffusion of Ag atoms. In this study, thin aluminum oxynitride (AlxOyNz) diffusion barriers have been formed in the temperature range of 400-725 °C by annealing Ag/Al bilayers on oxidized Si substrates in ammonia ambient. Rutherford backscattering spectrometry showed that the out-diffused Al reacted with both the ammonia and oxygen in the ambient and encapsulated the Ag films. Higher process temperatures and thinner original Al layers showed to improve the resistivity of the encapsulated Ag layers. The resulting Ag resistivity values are ∼1.75 ± 0.35 µΩ-cm. The thermal stability test of these diffusion barriers showed that these barriers sustained the interdiffusion between Cu and Ag up to 620 °C at least for 30 min in either vacuum or flowing He-0.5% H2. This temperature is a 200°C improvement over previously reported values for the self-encapsulated Cu and Ag films. X-ray diffraction spectra showed no formation of any high resistive intermetallic compounds, i.e., Ag3Al, Ag2Al, and AlAg3.

Calibration Method for Elemental Quantification

2000 ◽  
Vol 6 (S2) ◽  
pp. 536-537
Author(s):  
C. B. Vartuli ◽  
F. A. Stevie ◽  
L. A. Giannuzzi ◽  
T. L. Shofner ◽  
B. M. Purcell ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Peak Concentration ◽  
Energy Dispersive Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Calibration Method ◽  
High Dose ◽  
High Concentration ◽  
Borophosphosilicate Glass ◽  
Secondary Ion

Energy Dispersive Spectrometry (EDS) is generally calibrated for quantification using elemental standards. This can introduce errors when quantifying non-elemental samples and does not provide an accurate detection limit. In addition, variations between analysis tools can lead to values that differ considerably, especially for trace elements. By creating a standard with an exact trace composition, many of the errors inherent in EDS quantification measurements can be eliminated.The standards are created by high dose ion implantation. For ions implanted into silicon, a dose of 1E16 cm-2 results in a peak concentration of approximately 1E21 cm-3 or 2% atomic. The exact concentration can be determined using other methods, such as Rutherford Backscattering Spectrometry (RBS) or Secondary Ion Mass Spectrometry (SIMS). For this study, SIMS analyses were made using a CAMECA IMS-6f magnetic sector. Measurement protocols were used that were developed for high concentration measurements, such as B and P in borophosphosilicate glass (BPSG).

Chromium implantation in silica glass

1996 ◽  
Vol 11 (1) ◽  
pp. 229-235 ◽  
Author(s):  
E. Cattaruzza ◽  
R. Bertoncello ◽  
F. Trivillin ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray ◽  
Chromium Silicide ◽  
Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

Effects of As Doping on Properties of ZnO Films

2001 ◽  
Vol 692 ◽  
Author(s):  
K. S. Huh ◽  
D. K. Hwang ◽  
K. H. Bang ◽  
M. K. Hong ◽  
D. H. Lee ◽  
...  
Keyword(s):  
Optical Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Annealing Treatment ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
As Doping ◽  
Dopant Atoms ◽  
Increasing Temperature ◽  
Secondary Ion

AbstractA series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.

The Oxide Scale Growth Mechanism on Fe20Cr5Al+RE Alloy in SO2+O2

2009 ◽  
Vol 289-292 ◽  
pp. 541-550 ◽  
Author(s):  
Jerzy Jedlinski ◽  
Zbigniew Żurek ◽  
Martah Homa ◽  
G. Smoła ◽  
J. Camra
Keyword(s):  
Phase Composition ◽  
Secondary Ion Mass Spectrometry ◽  
Grazing Angle ◽  
Oxidation Mechanism ◽  
Complex Oxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thin Foils ◽  
Manufacturing Procedure ◽  
Secondary Ion

The oxidation mechanism of FeCrAl (+RE), RE: reactive elements: Y and Hf) thin foils was studied at temperatures ranging from 1093 K to 1173 K in SO2+1%O2 atmosphere. Materials were subjected to isothermal and thermal cycling exposures as well as to the so-called two-stage-oxidation. In the latter, an oxygen isotope 18O2 was used as a tracer. Starting materials and scales were characterized using Grazing Angle X-Ray Diffraction (GA-XRD), EDX, SEM, XPS and High Spatial Resolution Secondary Ion Mass Spectrometry (HSR-SIMS). The obtained results showed within the studied range of exposure conditions the scales on all the studied alloys grow via outward mechanism typical for transient oxides and not for the -Al2O3 which is consistent with phase composition results and scale morphology and/or microstructure. It was also found that ‘as received’ foils are not bare metals but complex oxide-on-metal systems resulting from their manufacturing procedure. The obtained results are discussed in terms of the diffusion-related transport properties of the scale and of the scale phase composition.

Thermal Stability of Cu/Si (111) Films Prepared by Ionized Cluster Beam Technique

2011 ◽  
Vol 287-290 ◽  
pp. 2369-2372
Author(s):  
Bo Cao ◽  
Yan Hui Jia ◽  
Gong Ping Li ◽  
Seong Jin Cho ◽  
Hee Kim
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Interface Reaction ◽  
Atomic Diffusion ◽  
Cluster Beam ◽  
Copper Silicide ◽  
Cu Films ◽  
Si Substrates ◽  
Before And After ◽  
Different Temperatures ◽  
Cluster Beams

The Cu films were deposited on P type Si (111) substrates by ionized cluster beam (ICB) technique. The interface reaction and atomic diffusion of Cu/Si (111) system were studied at different annealing temperatures by X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results were obtained: For the Cu/Si (111) samples prepared by ionized cluster beams atVa=3 kV, the interdiffusion of Cu and Si atoms occurred in the as deposited samples. The RBS spectra features were changed with a very small extent with increasing the annealing temperature. There are no copper-silicide phases observed by XRD before and after being annealed at different temperatures. The reason may be that there is a thermally stable interface between Cu films and Si substrates formed.

LUMINESCENT PROPERTIES OF SOL-GEL DEPOSITED Eu:TiO2 THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 769-773 ◽  
Author(s):  
M. GARCIA-ROCHA ◽  
A. CONDE-GALLARDO ◽  
I. HERNANDEZ-CALDERON ◽  
R. PALOMINO-MERINO
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Glass Substrates ◽  
Corning Glass ◽  
Different Temperatures ◽  
Hecd Laser

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.

scholarly journals Disordering of InGaN/GaN Superlattices After High-Pressure Annealing

1998 ◽  
Vol 537 ◽  
Author(s):  
M.D. McCluskey ◽  
L.T. Romano ◽  
B.S. Krusor ◽  
D. Hofstetter ◽  
D.P. Bour ◽  
...  
Keyword(s):  
Quantum Well ◽  
Secondary Ion Mass Spectrometry ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures ◽  
Composition Profiles ◽  
Secondary Ion

AbstractInterdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the annealing treatments to prevent decomposition of the InGaN and GaN. In as-grown material, x-ray diffraction spectra show InGaN superlattice peaks up to the fourth order. After annealing at 1400°C for 15 min, only the zero-order InGaN peak is observed, a result of compositional disordering of the superlattice. Composition profiles from secondary ion mass spectrometry indicate significant diffusion of Mg from the p-type GaN layer into the quantum well region. This Mg diffusion may lead to an enhancement of superlattice disordering. For annealing temperatures between 1250 and 1300°C, a blue shift of the InGaN spontaneous emission peak is observed, consistent with interdiffusion of In and Ga in the quantum-well region.

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