Point Defects Interaction with Extended Defects and Impurities and its Influences on the Si-SiO2 System Properties

2005 ◽  
Vol 864 ◽  
Author(s):  
D. Kropman ◽  
U. Abru ◽  
T. Kärner ◽  
U. Ugaste ◽  
E. Mellikov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Cooling Rate ◽  
Thermal Oxidation ◽  
Point Defects ◽  
Impurity Content ◽  
Interface Properties ◽  
Extended Defects ◽  
Oxidation Condition ◽  
Defects And Impurities ◽  
System Properties

AbstractThe type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: tempertature, cooling rate, oxidation time, impurity content. The interaction between point defects with extended defects and impurities affect the Si-SiO2 interface properties. The influences of point defects may be diminished and the interface properties improved by an appropriate choice of oxidation conditions.

Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties

2005 ◽  
Vol 108-109 ◽  
pp. 333-338
Author(s):  
Daniel Kropman ◽  
U. Abru ◽  
Tiit Kärner ◽  
U. Ugaste ◽  
E. Mellikov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Cooling Rate ◽  
Thermal Oxidation ◽  
Point Defects ◽  
Impurity Content ◽  
Interface Properties ◽  
Extended Defects ◽  
Oxidation Condition ◽  
Defects And Impurities ◽  
System Properties

The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. The interaction between point defects with extended defects and impurities affect the Si-SiO2 interface properties. The influence of point defects may be diminished and the interface properties improved by an appropriate choice of oxidation conditions.

Hydrogen Interaction with Point Defects in the Si-SiO2 Structures and its Influence on the Interface Properties

2007 ◽  
Vol 131-133 ◽  
pp. 345-350 ◽  
Author(s):  
Daniel Kropman ◽  
E. Mellikov ◽  
Tiit Kärner ◽  
Ü. Ugaste ◽  
Tony Laas ◽  
...  
Keyword(s):  
Point Defects ◽  
Hydrogen Adsorption ◽  
Impurity Content ◽  
Magnetic Interaction ◽  
Interface Properties ◽  
Extended Defects ◽  
Oxidation Condition ◽  
Paramagnetic Impurities ◽  
Defects And Impurities ◽  
P Type

The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. Interaction between the point defects with extended defects and impurities affects the SiO2 structure and Si-SiO2 interface properties. Hydrogen adsorption on n- and p- type wafers is different. One possible reason for that can be the strength of the magnetic interaction between the hydrogen and paramagnetic impurities of the adsorbent. The influence of point defects and impurities may be diminished and the interface properties improved by an appropriate choice of the oxidation conditions and postoxidation laser irradiation.

Interaction between point defects, extended defects and impurities in the Si–SiO2 system during the process of its formation

2004 ◽  
Vol 459 (1-2) ◽  
pp. 53-57
Author(s):  
D Kropman ◽  
T Kärner ◽  
U Abru ◽  
Ü Ugaste ◽  
E Mellikov
Keyword(s):  
Point Defects ◽  
Extended Defects ◽  
Sio2 System ◽  
Defects And Impurities

Interaction between point defects, extended defects and impurities in the Si–SiO2 system during the process of its formation

2004 ◽  
Vol 114-115 ◽  
pp. 295-298
Author(s):  
D. Kropman ◽  
T. Kärner ◽  
U. Abru ◽  
Ü. Ugaste ◽  
E. Mellikov ◽  
...  
Keyword(s):  
Point Defects ◽  
Extended Defects ◽  
Sio2 System ◽  
Defects And Impurities

Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties

2011 ◽  
Vol 178-179 ◽  
pp. 263-266
Author(s):  
Daniel Kropman ◽  
Enn Mellikov ◽  
Tiit Kärner ◽  
Ivo Heinmaa ◽  
Tõnu Laas ◽  
...  
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Electron Paramagnetic Resonance ◽  
Point Defects ◽  
Nmr Spectra ◽  
Impurity Content ◽  
Interface Properties ◽  
Paramagnetic Resonance ◽  
The Difference ◽  
P Type ◽  
Electron Paramagnetic

The results of an investigation of the point defects (PD) generation, redistribution and interaction with impurities in the Si-SiO2 system during the process of its formation in use of of electron paramagnetic resonance (EPR) and nuclear magnetic resonance (NMR) spectra are presented. The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation conditions: temperature, cooling rate, oxidation time and impurity content. The difference between interface properties of n- and p-type wafers could be related to different Fermi level position at the interface and to different PD densities in volume.

Cathodoluminescence Study of Ammonothermal GaN Crystals

2012 ◽  
Vol 725 ◽  
pp. 63-66 ◽  
Author(s):  
Vanesa Hortelano ◽  
Oscar Martínez ◽  
Juan Jiménez ◽  
Bu Guo Wang ◽  
S. Swider ◽  
...  
Keyword(s):  
Point Defects ◽  
Crystal Quality ◽  
Extended Defects ◽  
Defects And Impurities ◽  
Spectrally Resolved ◽  
Supercritical Ammonia ◽  
Cathodoluminescence Study

GaN crystals grown in supercritical ammonia by the ammonothermal method were studied by cathodoluminescence (CL), both in image and spectrally resolved modes. The main extended defects and the incorporation of point defects and impurities in different growth sectors were revealed. The influence of the seeds, the role of the growth planes and the changes in the crystal quality during the growth run are discussed.

Microstructural Evolution in Reduced TiO2

1981 ◽  
Vol 39 ◽  
pp. 74-75
Author(s):  
W. T. Donlon ◽  
S. Shinozaki ◽  
E. M. Logothetis ◽  
W. Kaizer
Keyword(s):  
Microstructural Evolution ◽  
Point Defects ◽  
Extended Defects ◽  
Small Deviations ◽  
Controlled Atmospheres ◽  
Limited Solubility ◽  
Thin Foils ◽  
Heat Treated ◽  
Porous Polycrystalline ◽  
Crystallographic Shear

Since point defects have a limited solubility in the rutile (TiO2) lattice, small deviations from stoichiometry are known to produce crystallographic shear (CS) planes which accomodate local variations in composition. The material used in this study was porous polycrystalline TiO2 (60% dense), in the form of 3mm. diameter disks, 1mm thick. Samples were mechanically polished, ion-milled by conventional techniques, and initially examined with the use of a Siemens EM102. The electron transparent thin foils were then heat-treated under controlled atmospheres of CO/CO2 and H2 and reexamined in the same manner.The “as-received” material contained mostly TiO2 grains (∼5μm diameter) which had no extended defects. Several grains however, aid exhibit a structure similar to micro-twinned grains observed in reduced rutile. Lattice fringe images (Fig. 1) of these grains reveal that the adjoining layers are not simply twin related variants of a single TinO2n-1 compound. Rather these layers (100 - 250 Å wide) are alternately comprised of stoichiometric TiO2 (rutile) and reduced TiO2 in the form of Ti8O15, with the Ti8O15 layers on either side of the TiO2 being twin related.

Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface

2009 ◽  
Vol 156-158 ◽  
pp. 145-148 ◽  
Author(s):  
Daniel Kropman ◽  
E. Mellikov ◽  
K. Lott ◽  
Tiit Kärner ◽  
Ivo Heinmaa ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Magnetic Resonance ◽  
Fermi Level ◽  
Point Defects ◽  
Interface Properties ◽  
Hydrogen Ions ◽  
Paramagnetic Resonance ◽  
Proposed Model ◽  
P Type ◽  
Electron Paramagnetic

The results of investigation of the point defect generation and interaction with impurities in the Si-SiO2 system during the process of its formation by means of electron paramagnetic resonance (EPR) and nucleous magnetic resonance (NMR) technique are presented. It has been shown that the diference in point defects interaction with hydrogen at the Si-SO2 interface with n- and p-type conductivity are connected with the sign of hydrogen ions incorporation dependence on the Fermi level position in accordance with the proposed model. The interface properties may be improved by laser irradiation.

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