Novel Wide-Band-Gap Ag(In1-xGax)Se2 Thin Film Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Tokio Nakada ◽  
Keiichiro Yamada ◽  
Ryota Arai ◽  
Hiroki Ishizaki ◽  
Naoomi Yamada

AbstractAg(In1-xGax)Se2 thin films have been deposited on Mo-coated soda-lime glass substrates by the three-stage process using a molecular beam epitaxy (MBE) system. We found a remarkable decrease in the substrate temperature during the 2nd stage in which the film composition changes to a Ag excess. A single phase chalcopyrite AIGS thin film with a slightly Ag poor composition was obtained by using the temperature monitoring composition method. The cell performance of the AIGS thin film solar cell was found to strongly depend on the Ga/(In+Ga) and Ag/(In+Ga) atomic ratios.A high efficiency wide-gap (Eg=1.7eV) Ag(In0.2Ga0.8)Se2 thin film solar cell with a total-area efficiency of 9.3% (10.2% active area efficiency), Voc = 949mV, Jsc = 17.0 mA/cm2, FF = 0.577, and total area = 0.42 cm2 was achieved. The junction formation mechanism of AIGS devices is discussed based on electron beam induced current (EBIC) and scanning capacitance microscopy (SCM) analyses.

2011 ◽  
Vol 1321 ◽  
Author(s):  
K. Wang ◽  
K. H. Wong

ABSTRACTHigh quality polycrystalline silicon (poly-Si) thin film solar cell was successfully fabricated on soda-lime glass substrates by electron beam (Ebeam) evaporation at low processing temperature. The initial poly-Si seed layer (p+-type 0.5 μm thick) was grown via the aluminum induced crystallization (AIC) method at 450 °C. Prominent interdiffusion and Si crystallization have been observed. X-ray diffraction (XRD) shows that (111) is the dominating crystalline orientation. Post annealing at 450 °C for six hours has produced densely packed Si grains with dimension of more than 10 μm in the plane of the film. Non-destructive Raman spectroscopy reveals the remarkable crystalline improvement for samples after thermal treatment. After removing the top diffused Al by chemical means, an absorber layer (p-type) of 0.9 μm thick was subsequently deposited onto the seed layer by Ebeam evaporation at 500 °C. Transmission electron microscopy (TEM) confirmed good homo-epitaxial growth. Without breaking the high vacuum, an n-type amorphous Si (a-Si) layer (0.7 μm thick) was coated onto the absorber layer to form p-n junction. The corresponding I-V characteristics suggest that our low temperature processing technique is applicable for production of poly-Si thin film solar cell on low cost substrates.


Solar Cells ◽  
1987 ◽  
Vol 21 (1-4) ◽  
pp. 454
Author(s):  
Kenneth A. Hay ◽  
Kenneth R. Zanio

Author(s):  
F. Bonnín-Ripoll ◽  
Ya. B. Martynov ◽  
R. G. Nazmitdinov ◽  
G. Cardona ◽  
R. Pujol-Nadal

A thorough optical + electrical + Lambertian scattering analysis determines the optimal thickness of a perovskite thin-film solar cell revealing its high efficiency with inorganic HTMs.


2020 ◽  
Vol 12 (21) ◽  
pp. 24403-24410
Author(s):  
Qing Gao ◽  
Jianping Ao ◽  
Jinlian Bi ◽  
Liyong Yao ◽  
Zhaojing Zhang ◽  
...  

2011 ◽  
Vol 109 (8) ◽  
pp. 084306 ◽  
Author(s):  
Fei Wang ◽  
Hongyu Yu ◽  
Junshuai Li ◽  
Shemein Wong ◽  
Xiao Wei Sun ◽  
...  

2015 ◽  
Vol 12 (9-11) ◽  
pp. 1201-1205 ◽  
Author(s):  
Mustafa Ünal ◽  
Hisham Nasser ◽  
Mete Günöven ◽  
İlkay Sökmen ◽  
Aydın Tankut ◽  
...  

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