scholarly journals Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature

2021 ◽  
Vol 24 (suppl 1) ◽  
Author(s):  
R. Ramos ◽  
M. Chaves ◽  
E. Martins ◽  
Steven F. Durrant ◽  
E.C. Rangel ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Growth Evolution

The Structure and Magnetic Properties of NiZn-Ferrite Films Deposited by Magnetron Sputtering at Room Temperature

2013 ◽  
Vol 690-693 ◽  
pp. 1702-1706 ◽  
Author(s):  
Shuang Jun Nie ◽  
Hao Geng ◽  
Jun Bao Wang ◽  
Lai Sen Wang ◽  
Zhen Wei Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Saturation Magnetization ◽  
Room Temperature ◽  
Oxygen Flow ◽  
Flow Ratio ◽  
Study Results ◽  
Ferrite Thin Films ◽  
Ferrite Films

NiZn-ferrite thin films were deposited onto silicon and glass substrates by radio frequency magnetron sputtering at room temperature. The effects of the relative oxygen flow ratio on the structure and magnetic properties of the thin films were investigated. The study results reveal that the films deposited under higher relative oxygen flow ratio show a better crystallinity. Static magnetic measurement results indicated that the saturation magnetization of the films was greatly affected by the crystallinity, grain dimension, and cation distribution in the NiZn-ferrite films. The NiZn-ferrite thin films with a maximum saturation magnetization of 151 emucm-3, which is about 40% of the bulk NiZn ferrite, was obtained under relative oxygen flow ratio of 60%.

Room temperature deposition of crystalline HfN thin films by DC reactive magnetron sputtering

2021 ◽  
Author(s):  
Wuttichai Phae-ngam ◽  
Tossaporn Lertvanithphol ◽  
Chanunthorn Chananonnawathorn ◽  
Rattanachai Kowong ◽  
Mati Horprathum ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering ◽  
Temperature Deposition

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Considerable Improvement ◽  
Photoluminescence Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

Structural Evolution Upon Annealing of Multi-Layer Si/Fe Thin Films Prepared by Magnetron Sputtering

2007 ◽  
Vol 561-565 ◽  
pp. 1161-1164
Author(s):  
Xiao Na Li ◽  
Bing Hu ◽  
Chuang Dong ◽  
Xin Jiang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Structural Evolution ◽  
Radio Frequency Magnetron Sputtering ◽  
Transmission Electron ◽  
Direct Band ◽  
The Stability ◽  
Sputtering System

Fe/Si multi-layer films were fabricated on Si (100) substrates utilizing radio frequency magnetron sputtering system. Si/β-FeSi2 structure was found in the films after the deposition. Structural characterization of Fe-silicide sample was performed by transmission electron microscopy, to explore the dependence of the microstructure of β-FeSi2 film on the preparation parameters. It was found that β-FeSi2 particles were formed after the deposition without annealing, whose size is less than 20nm ,with a direct band-gap of 0.94eV in room temperature. After annealing at 850°C, particles grow lager, however the stability of thin films was still good.

Structural, Optical and Magnetic Properties of Co and Fe Doped ZnO Thin Films Grown by Radio Frequency Magnetron Sputtering

2006 ◽  
Vol 957 ◽  
Author(s):  
Luis Manuel Angelats ◽  
Maharaj S Tomar ◽  
Rahul Singhal ◽  
Oscar P Perez ◽  
Hector J Jimenez ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Radio Frequency Magnetron Sputtering ◽  
Optical And Magnetic Properties ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Antiferromagnetic Behavior

ABSTRACTZn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O targets were used to grow thin films by rf magnetron sputtering. XRD patterns of the films showed a strong preferred orientation along c-axis. Zn0.90Co0.10O film showed a transmittance above 75% in the visible range, while the transmittance of the Zn0.85[Co0.50Fe0.50]0.15O film was about 45%; with three absorption peaks attributed to d-d transitions of tetrahedrally coordinated Co2+. The band gap values for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films were 2.95 and 2.70 eV respectively, which are slightly less than ZnO bulk. The Zn0.90Co0.10O film showed a relatively large positive magnetoresistance (MR) at the high magnetic field in the temperature range from 7 to 50 K, which reached 11.9% a 7K for the magnetoresistance. The lowest MR was found at 100 K. From M-H curve measured at room temperature shown a probable antiferromagnetic behavior, although was possible to observe little coercive field of 30 Oe and 40 Oe for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films, respectively.

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

Characteristics of CZTSSe Thin Films Prepared by Selenization of Sputtered Cu, Sn and ZnS Layers

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940040 ◽  
Author(s):  
N. Akcay ◽  
S. Ozcelik ◽  
E. Zaretskaya ◽  
R. Juskenas
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Sem Study ◽  
Packed Structure

We reported the growth of CZTSSe thin films on Mo-coated SLG substrates by the two-step approach which includes the deposition of precursor films by the magnetron sputtering method at room temperature followed by selenization of the precursor films at 560∘C. Formation of CZTSSe films with the kesterite structure was confirmed by XRD and Raman spectroscopy analyses. The films are slightly Cu-rich and Zn-deficient. SEM study shown that the films have uniform surface morphology and densely packed structure without any voids and cracks.

Sign in / Sign up

Export Citation Format

Share Document