Adjusting the Morphology and Properties of SiC Nanowires by the Catalyst Control

Abstract Herein, we report the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, the pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, the emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000℃.The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.

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Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Materials ◽

10.3390/ma13225179 ◽

2020 ◽

Vol 13 (22) ◽

pp. 5179

Author(s):

Chuchu Guo ◽

Laifei Cheng ◽

Fang Ye ◽

Qing Zhang

Keyword(s):

Thermal Stability ◽

Growth Mechanism ◽

Emission Spectra ◽

Photoluminescence Properties ◽

Si Substrate ◽

Vapor Liquid Solid ◽

Good Thermal Stability ◽

Sic Nanowires ◽

Vapor Liquid Solid Mechanism ◽

Different Thickness

We report on the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000 °C. The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.

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Study on in-Situ Preparation and Growth Mechanism of TiCxN1-x Whiskers

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.197-198.617 ◽

2011 ◽

Vol 197-198 ◽

pp. 617-622

Author(s):

Xue Wen Chong ◽

Chuan Zhen Huang ◽

Liang Xu ◽

Bin Zou ◽

Han Lian Liu ◽

...

Keyword(s):

Growth Mechanism ◽

Carbothermal Reduction ◽

Reduction Process ◽

Vapor Liquid Solid ◽

Mixed Powder ◽

Vapor Liquid Solid Mechanism ◽

Vapor Liquid

TiCxN1-x whiskers were prepared using TiO2 and carbon mixed powder as the starting powder at the atmosphere of nitrogen by the carbothermal reduction process. NaCl and NiCl2 were added into the starting powder as the cosolvent and growth adds of impurities, respectively. An effect of the content of TiO2 and carbon in the starting powder on the TiCxN1-x whiskers was investigated. It is found from SEM and XRD observations that three types of TiCx N1-x whiskers are obtained when the different mol ratios of C and Ti are applied. The growth of whiskers is not only urged by the droplet on the top of whiskers, but also initiated by the helical dislocations. The growth of TiCxN1-x whiskers is controlled by the vapor-liquid-solid mechanism as well as vapor-solid mechanism.

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The Properties of Silica and Hybrid Nanostructures

MRS Proceedings ◽

10.1557/proc-1256-n11-61 ◽

2010 ◽

Vol 1256 ◽

Author(s):

Avi Shalav ◽

Robert Elliman ◽

Taehyun Kim

Keyword(s):

Physical Properties ◽

Growth Mechanism ◽

Optically Active ◽

Hybrid Nanostructures ◽

Si Substrate ◽

Active Oxidation ◽

Vapor Liquid Solid ◽

Coating Methods ◽

Secondary Materials ◽

Vapor Liquid Solid Growth

AbstractSiOx nanowires can be grown via the vapor-liquid-solid growth mechanism using SiO vapor produced during the active oxidation of a Si substrate. The as-grown SiOx nanowire have a range of useful physical properties but can also be used as large surface area substrates for the growth of secondary materials. In this study we report the use of optically active impurities to grow and dope secondary nanowire structures, and the use of simple coating methods to enhance and extend the functionality of these unique nanowire substrates.

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Graphene-based SiC nanowires with nanosheets: synthesis, growth mechanism and photoluminescence properties

CrystEngComm ◽

10.1039/d0ce00297f ◽

2020 ◽

Vol 22 (24) ◽

pp. 4074-4078 ◽

Cited By ~ 3

Author(s):

Zhihui Hu ◽

Zhi Chen ◽

Juntong Huang ◽

Mingge Yan ◽

Meng Zhang ◽

...

Keyword(s):

Silicon Dioxide ◽

Growth Mechanism ◽

Graphene Nanosheets ◽

Metal Catalyst ◽

Direct Reaction ◽

Photoluminescence Properties ◽

Sic Nanowires

3C-SiC nanowires with nanosheets were synthesized via a direct reaction of Si vapor (from solid silicon) and SiO vapor (from silicon and silicon dioxide) with graphene nanosheets at 1500 °C without any additional metal catalyst.

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Growth Mechanism of Cubic-Silicon Carbide Nanowires

Journal of Nanomaterials ◽

10.1155/2009/572865 ◽

2009 ◽

Vol 2009 ◽

pp. 1-5 ◽

Cited By ~ 9

Author(s):

K. Y. Cheong ◽

Z. Lockman

Keyword(s):

Silicon Carbide ◽

Activated Carbon ◽

Vapor Phase ◽

Growth Mechanism ◽

Carbon Powder ◽

Si Substrate ◽

Sic Nanowires ◽

Cubic Silicon Carbide

Cubic-SiC nanowires were synthesized using activated carbon powder and Si substrate in vacuum at 1200–1350°C for 1–4 hours. The nanowires were grown according to the following proposed mechanisms: (1) diffusion of C/CO into Si substrate, (2) weakening of Si bond and atomic kick-out, (3) formation of Si-C in vapor phase, (4) formation of saturated SiC layer, (5) formation of pyramid-like SiC nanostructure, and (6) formation of SiC nanowires.

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Preparation and Growth Mechanism of Hexagonal MgAl2O4 Spinel Fibers

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.368-372.409 ◽

2008 ◽

Vol 368-372 ◽

pp. 409-411 ◽

Cited By ~ 1

Author(s):

Dao Yuan Yang ◽

Fen Ling Qian ◽

Kai Zhu ◽

Zhan Ling Lu ◽

Rui Zhang

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Growth Mechanism ◽

Nitrogen Atmosphere ◽

X Ray Diffraction ◽

Vapor Liquid Solid ◽

X Ray ◽

Structure And Morphology ◽

Vapor Liquid Solid Mechanism ◽

Scanning Electron

Hexagonal MgAl2O4 spinel fibers were synthesized at 1500oC for 6h in nitrogen atmosphere. The structure and morphology of the fibers were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The fibers grew via vapor- liquid- solid mechanism. The twin mechanism was suggested to play a key role in the formation process of the hexagonal fibers.

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Self-Catalytic Synthesis and Photoluminescence Property of Cluster-Like CdSiO3 Nanowire Arrays

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2008.253 ◽

2008 ◽

Vol 8 (11) ◽

pp. 5825-5830 ◽

Cited By ~ 4

Author(s):

Jianfeng Shi ◽

Yang Jiang ◽

Guohua Li ◽

Chun Wang ◽

Nan Li

Keyword(s):

Nanowire Array ◽

Photoluminescence Property ◽

Catalytic Synthesis ◽

The Self ◽

Nanowire Arrays ◽

Si Substrate ◽

Vapor Liquid Solid ◽

Bulk Powder ◽

Vapor Liquid Solid Mechanism ◽

Lower Melting Point

Cluster-like cadmium silicate (CdSiO3) nanowire arrays on Si substrate have been synthesized via a self-catalytic growth using a modified vapor-phase evaporation method. XRD and HRTEM analyses indicated that the CdSiO3 nanowire had a monoclinic single-crystal structure. The growth mechanism of the cluster-like nanowire array is proposed as vapor-liquid-solid mechanism, in which lower melting point Cd serves as the catalyst. The PL measurements revealed the strong photoluminescence peaks in the purple region of 358–476 nm due to the self-activated luminescence, which was different from those of CdSiO3 bulk powder.

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Characterization of SiC nanowires grown by APCVD using single precursors

MRS Proceedings ◽

10.1557/proc-832-f7.16 ◽

2004 ◽

Vol 832 ◽

Author(s):

Dae-Ho Rho ◽

Jae-Soo Kim ◽

Dong-Jin Byun ◽

Jae-Woong Yang ◽

Jae-Hoon Lee ◽

...

Keyword(s):

Growth Direction ◽

Nanowire Growth ◽

Solid Reaction ◽

Vapor Liquid Solid ◽

Flow Rates ◽

Sic Nanowires ◽

Vapor Liquid Solid Mechanism ◽

Coating Methods ◽

Temperature Time

ABSTRACTSiC nanowire was grown by APCVD using single precursors. Grown SiC nanowires had 10∼60nm diameters and lengths of several micrometers. Nanowire's diameters and lengths were varied with kind of catalysts. Nanowire's growth scheme was divided by two regions with diameter of nanowire. At first region, nanowire was grown by VLS (vapor-liquid-solid) mechanism, but at the second region, nanowire growth was made by VS (vapor-solid) reaction. These differences were made from limitations of growth rate and deactivation effects. Growth temperature, time and flow rates of source gases were affected nanowire's diametesr and its lengths. And kind of catalysts, coating methods and precursors were affected growth direction and microstructures too.

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