scholarly journals Спонтанное и стимулированное излучение двухчастотного квантово-каскадного лазера

2019 ◽  
Vol 53 (3) ◽  
pp. 365
Author(s):  
А.В. Бабичев ◽  
А.Г. Гладышев ◽  
А.С. Курочкин ◽  
Е.С. Колодезный ◽  
В.Н. Неведомский ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Spontaneous Emission ◽  
Solid Solutions ◽  
Quantum Cascade Laser ◽  
Molecular Beam ◽  
Laser Generation ◽  
Structural Quality ◽  
Quantum Cascade ◽  
Inp Substrate

AbstractThe results of experiments on the fabrication (by molecular-beam epitaxy) and investigation of the heterostructures of a two-frequency quantum-cascade laser produced on the basis of a heteropair of In_0.53Ga_0.47As/Al_0.48In_0.52As solid solutions on an InP substrate are presented. The heterostructures contained quantum cascades emitting at a wavelength of 9.6 μm and cascades emitting at a wavelength of 7.6 μm. The high structural quality of the fabricated heterostructures is shown. The spontaneous emission and lasing spectra are investigated and the multimodal laser generation of stripe lasers at a wavelength of 7.6 μm is demonstrated.

Gas-source molecular beam epitaxy growth of an 8.5 μm quantum cascade laser

1997 ◽  
Vol 71 (18) ◽  
pp. 2593-2595 ◽  
Author(s):  
S. Slivken ◽  
C. Jelen ◽  
A. Rybaltowski ◽  
J. Diaz ◽  
M. Razeghi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Cascade Laser ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Quantum Cascade ◽  
Gas Source

scholarly journals Morphology and surface reconstructions of m-plane GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
C. D. Lee ◽  
R. M. Feenstra ◽  
J. E. Northrup ◽  
L. Lymperakis ◽  
J. Neugebauer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Structural Quality ◽  
Surface Reconstructions ◽  
Gan Buffer Layer

ABSTRACTM-plane GaN(1100) is grown by plasma assisted molecular beam epitaxy on ZnO(1100) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1100) GaN films are obtained, with a slate like surface morphology. On the GaN(1100) surfaces, reconstructions with symmetry of c(2×2) and approximate “4×5” are found under N- and Ga-rich conditions, respectively. We propose a model for Ga-rich conditions with the “4×5” structure consisting of ≥ 2 monolayers of Ga terminating the GaN surface.

scholarly journals Molecular-beam epitaxy growth and characterization of 5-μm quantum cascade laser

2011 ◽  
Vol 291 ◽  
pp. 012008
Author(s):  
V V Mamutin ◽  
V M Ustinov ◽  
N D Ilyinskaya ◽  
M V Baydakova ◽  
B Ya Ber ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Cascade Laser ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Quantum Cascade

Buried-heterostructure quantum-cascade laser overgrown by gas-source molecular-beam epitaxy

2012 ◽  
Vol 100 (21) ◽  
pp. 213504 ◽  
Author(s):  
M. Chashnikova ◽  
G. Monastyrskyi ◽  
A. Aleksandrova ◽  
M. Klinkmüller ◽  
M. P. Semtsiv ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Cascade Laser ◽  
Molecular Beam ◽  
Quantum Cascade ◽  
Gas Source ◽  
Buried Heterostructure

Improved structural quality of molecular‐beam epitaxy HgCdTe films

1989 ◽  
Vol 7 (2) ◽  
pp. 517-522 ◽  
Author(s):  
R. J. Koestner ◽  
H.‐Y. Liu ◽  
H. F. Schaake ◽  
T. R. Hanlon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Quality

scholarly journals Квантовые каскадные лазеры с длиной волны излучения 4.8 mum, работающие при комнатной температуре

2018 ◽  
Vol 44 (18) ◽  
pp. 17
Author(s):  
В.В. Мамутин ◽  
А.П. Васильев ◽  
А.В. Лютецкий ◽  
Н.Д. Ильинская ◽  
А.А. Усикова ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Room Temperature ◽  
Molecular Beam ◽  
High Accuracy ◽  
High Quality ◽  
Quantum Cascade ◽  
Laser Heterostructures ◽  
Inp Substrate ◽  
Lattice Matched

AbstractWe report on room-temperature generation at the 4.8-μm wavelength in a lattice-matched structure of a quantum cascade laser (QCL) grown on indium phosphide (InP) substrate. Laser heterostructures grown by molecular beam epitaxy (MBE) comprised 30 cascades and were designed to generate at the 4.80 μm wavelength corresponding to an atmospheric transparency window. Experiments demonstrated effective lasing at temperatures from 80 to 300 K on a wavelength coinciding with the calculated value, which confirmed the high quality of interfaces, high precision of layer thicknesses, and high accuracy of active region doping.

scholarly journals Мощные квантово-каскадные лазеры с длиной волны генерации 8 μm

2019 ◽  
Vol 45 (14) ◽  
pp. 48
Author(s):  
А.В. Бабичев ◽  
В.В. Дюделев ◽  
А.Г. Гладышев ◽  
Д.А. Михайлов ◽  
А.С. Курочкин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Cascade Laser ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Power ◽  
Output Optical Power ◽  
Quantum Cascade ◽  
Fabry Perot ◽  
Cleaved Facets ◽  
Lattice Matched

The heterostructure of a quantum-cascade laser based on In0.53Ga0.47As/Al0.48In0.52As heteropair lattice matched with the InP was grown by molecular beam epitaxy. InP layers was used to form the optical waveguide. Room temperature lasing in the spectral range of 8 μm in the standard ridge geometry of a Fabry-Perot cavity formed by cleaved facets with peak output optical power of 0.45 W was obtained.

Growth initiation for buried-heterostructure quantum-cascade laser regrowth by gas-source molecular-beam epitaxy

2014 ◽  
Vol 398 ◽  
pp. 40-44 ◽  
Author(s):  
Y.V. Flores ◽  
M. Elagin ◽  
S.S. Kurlov ◽  
A. Aleksandrova ◽  
G. Monastyrskyi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Cascade Laser ◽  
Molecular Beam ◽  
Quantum Cascade ◽  
Gas Source ◽  
Growth Initiation ◽  
Buried Heterostructure
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