scholarly journals Квантовые каскадные лазеры с длиной волны излучения 4.8 mum, работающие при комнатной температуре

2018 ◽  
Vol 44 (18) ◽  
pp. 17
Author(s):  
В.В. Мамутин ◽  
А.П. Васильев ◽  
А.В. Лютецкий ◽  
Н.Д. Ильинская ◽  
А.А. Усикова ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Room Temperature ◽  
Molecular Beam ◽  
High Accuracy ◽  
High Quality ◽  
Quantum Cascade ◽  
Laser Heterostructures ◽  
Inp Substrate ◽  
Lattice Matched

AbstractWe report on room-temperature generation at the 4.8-μm wavelength in a lattice-matched structure of a quantum cascade laser (QCL) grown on indium phosphide (InP) substrate. Laser heterostructures grown by molecular beam epitaxy (MBE) comprised 30 cascades and were designed to generate at the 4.80 μm wavelength corresponding to an atmospheric transparency window. Experiments demonstrated effective lasing at temperatures from 80 to 300 K on a wavelength coinciding with the calculated value, which confirmed the high quality of interfaces, high precision of layer thicknesses, and high accuracy of active region doping.

Electric and thermoelectric properties of CdTe/PbTe epitaxial nanocomposite

2014 ◽  
Vol 07 (06) ◽  
pp. 1440007
Author(s):  
Michal Szot ◽  
Krzysztof Dybko ◽  
Piotr Dziawa ◽  
Leszek Kowalczyk ◽  
Viktor Domukhovski ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Molecular Beam ◽  
High Quality ◽  
Polycrystalline Solid ◽  
Hall Effect Measurements ◽  
Shubnikov De Haas Oscillations

The electric and thermoelectric properties of novel, CdTe / PbTe layered nanocomposite material are investigated. The molecular beam epitaxy (MBE) method was used for preparation of samples with well controlled distances (from 20 to 70 nm) between the layers of CdTe nanograins embedded in PbTe thermoelectric matrix as well as with number of these layers from 2 to 10. The Hall effect measurements performed in temperature range from 4–300 K revealed that carrier mobility is strongly affected by scattering on CdTe grain boundaries. The observation of Shubnikov-de Haas oscillations confirms high quality of the samples and allows determination of effective mass of conducting electrons m* = 0.04m0. The measurements of the room temperature Seebeck coefficient together with electrical conductivity lead to the power factors which are comparable to those reported in PbTe / CdTe polycrystalline solid solutions.

scholarly journals Мощные квантово-каскадные лазеры с длиной волны генерации 8 μm

2019 ◽  
Vol 45 (14) ◽  
pp. 48
Author(s):  
А.В. Бабичев ◽  
В.В. Дюделев ◽  
А.Г. Гладышев ◽  
Д.А. Михайлов ◽  
А.С. Курочкин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Cascade Laser ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Power ◽  
Output Optical Power ◽  
Quantum Cascade ◽  
Fabry Perot ◽  
Cleaved Facets ◽  
Lattice Matched

The heterostructure of a quantum-cascade laser based on In0.53Ga0.47As/Al0.48In0.52As heteropair lattice matched with the InP was grown by molecular beam epitaxy. InP layers was used to form the optical waveguide. Room temperature lasing in the spectral range of 8 μm in the standard ridge geometry of a Fabry-Perot cavity formed by cleaved facets with peak output optical power of 0.45 W was obtained.

scholarly journals Генерация квантово-каскадного лазера с тонкой верхней обкладкой

2019 ◽  
Vol 127 (8) ◽  
pp. 278
Author(s):  
А.В. Бабичев ◽  
А.Г. Гладышев ◽  
Д.В. Денисов ◽  
Л.Я. Карачинский ◽  
И.И. Новиков ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Molecular Beam ◽  
Quantum Cascade Lasers ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Cascade ◽  
Cladding Layer ◽  
Inp Substrate ◽  
Cascade Lasers

Experimental results on the manufacturing and study of the properties of 7-8 μm wavelength range injection quantum-cascade lasers (QCLs) with a waveguide with a thin top cladding layer based on indium phosphide are presented. The heterostructure is formed by molecular beam epitaxy on an InP substrate, with a In0.53Ga0.47As/Al0.48In0.52As active region. Lasing at a wavelength of 7.8 μm at a temperature of 300 K with a threshold current density of ~ 6 kA / cm2 is obtained. Characteristic temperature T0 and T1 values for the QCLs are about 150 K and 450 K, respectively. Obtained results confirm the promising design of the QCLs with a waveguide with a thin top cladding layer for detecting liquids and microfluidic devices development.

scholarly journals Спонтанное и стимулированное излучение двухчастотного квантово-каскадного лазера

2019 ◽  
Vol 53 (3) ◽  
pp. 365
Author(s):  
А.В. Бабичев ◽  
А.Г. Гладышев ◽  
А.С. Курочкин ◽  
Е.С. Колодезный ◽  
В.Н. Неведомский ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Spontaneous Emission ◽  
Solid Solutions ◽  
Quantum Cascade Laser ◽  
Molecular Beam ◽  
Laser Generation ◽  
Structural Quality ◽  
Quantum Cascade ◽  
Inp Substrate

AbstractThe results of experiments on the fabrication (by molecular-beam epitaxy) and investigation of the heterostructures of a two-frequency quantum-cascade laser produced on the basis of a heteropair of In_0.53Ga_0.47As/Al_0.48In_0.52As solid solutions on an InP substrate are presented. The heterostructures contained quantum cascades emitting at a wavelength of 9.6 μm and cascades emitting at a wavelength of 7.6 μm. The high structural quality of the fabricated heterostructures is shown. The spontaneous emission and lasing spectra are investigated and the multimodal laser generation of stripe lasers at a wavelength of 7.6 μm is demonstrated.

scholarly journals Изготовление и исследование изорешеточной гетероструктуры для квантовых каскадных лазеров

2018 ◽  
Vol 52 (7) ◽  
pp. 812
Author(s):  
В.В. Мамутин ◽  
А.П. Васильев ◽  
А.В. Лютецкий ◽  
Н.Д. Ильинская ◽  
Ю.М. Задиранов ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Active Region ◽  
Indium Phosphide ◽  
High Precision ◽  
Quantum Cascade Laser ◽  
Molecular Beam ◽  
Laser Structure ◽  
Quantum Cascade ◽  
Lattice Matched ◽  
Atmospheric Windows

AbstractThe fabrication and study of the characteristics of a lattice-matched quantum cascade laser structure on an indium-phosphide substrate, designed for a wavelength of ~4.8 μm corresponding to one of the atmospheric windows are described. The heterostructure grown by molecular-beam epitaxy consisted of thirty cascades. Lasing was experimentally observed at temperatures up to 200 K at a wavelength coinciding with the calculated one, which confirms the high heterointerface quality and high precision of the layer thicknesses and active-region doping levels.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

scholarly journals 3D ultrasound–guided resection of low-grade gliomas: principles and clinical examples

2019 ◽  
Vol 47 (6) ◽  
pp. E9 ◽  
Author(s):  
Geirmund Unsgård ◽  
Frank Lindseth
Keyword(s):  
3D Ultrasound ◽  
High Accuracy ◽  
Low Grade ◽  
Ultrasound Guided ◽  
High Quality ◽  
Case Examples ◽  
Low Grade Gliomas ◽  
Mesial Temporal Lobe ◽  
Temporal Lobe Lesions

3D ultrasound (US) is a convenient tool for guiding the resection of low-grade gliomas, seemingly without deterioration in patients’ quality of life. This article offers an update of the intraoperative workflow and the general principles behind the 3D US acquisition of high-quality images.The authors also provide case examples illustrating the technique in two small mesial temporal lobe lesions and in one insular glioma. Due to the ease of acquiring new images for navigation, the operations can be guided by updated image volumes throughout the entire course of surgery. The high accuracy offered by 3D US systems, based on nearly real-time images, allows for precise and safe resections. This is especially useful when an operation is performed through very narrow transcortical corridors.

Photoluminescence Characterization of SiGe/Si Quantum-Well Wire Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
S. Nilsson ◽  
H. P. Zeindl ◽  
A. Wolff ◽  
K. Pressel
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Quality ◽  
Photoluminescence Spectra ◽  
Single Quantum Well ◽  
Quantum Well Wire ◽  
Carbon Interstitial

ABSTRACTLow-temperature photoluminescence measurements were performed in order to probe the optical quality of SiGe/Si quantum-well wire structures fabricated by electron-beam lithography and subsequent reactive ion etching, having the patterned polymethylmethacrylate resist as an etch mask. In addition, one set of quantum-well wire structures was post-treated by means of annealing in a hydrogen environment. Our results show that even for the smallest wires of about 100nm in width, the wires exhibit phonon-resolved photoluminescence spectra, similar to that from the molecular beam eptitaxially grown SiGe single quantum well which was used as starting material for the patterning process. After the patterning process a new sharp peak appears in the photoluminescence spectra at 0.97eV in photon energy. Our investigation suggests that this feature is introduced by damage during the patterning process and most probably identical to the G-line, which previously was identified as originating from the dicarbon centre (substitutional carbon-interstitial carbon) in Si. This centre is known to be a very common endproduct of irradiating Si near room temperature which is the case at our patterning process.

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