scholarly journals Phonon Drag Thermopower in Silicene in Equipartition Regime at Room Temperature

2021 ◽  
Vol 9 (11) ◽  
pp. 399-403
Author(s):  
Kasala Suresha
Keyword(s):  
Band Gap ◽  
Fermi Energy ◽  
Room Temperature ◽  
Phonon Drag ◽  
Thermoelectric Effects ◽  
Free Standing ◽  
Thermoelectromotive Force ◽  
Electron Phonon Interaction ◽  
Electron Drag ◽  
High Carrier Mobility

Abstract: Similar to graphene, zero band gap limits the application of Silicene in nanoelectronics despite of its high carrier mobility. In this article we calculate the contribution of electron-phonon interaction to thermoelectric effects in silicene. One considers the case of free standing silicene taking into account interaction with intrinsic acoustic phonons. The temperature considered here is at room temperature. We noticed that the contribution to thermoelectromotive force due to electron drag by phonons is determined by the Fermi energy. The explicit temperature dependence of the contribution to thermoelectromotive force deriving from by phonons is weak in contrast to that due to diffusion, which is directly proportional to temperature. Thus a theoretical limit has been established for a possible increase of the thermoelectromotive force through electron drag by the intrinsic phonons of silicene. Keywords: Phonon-drag thermopower, electron-diffusion thermopower, silicene, fermi energy, zero band gap

Free-standing electrochemically coated MoSx based 3D-printed nanocarbon electrode for solid-state supercapacitor application

Nanoscale ◽  
2021 ◽  
Author(s):  
Kalyan Ghosh ◽  
Martin Pumera
Keyword(s):  
Solid State ◽  
Transition Metal ◽  
Electrochemical Deposition ◽  
Room Temperature ◽  
Free Standing ◽  
Metal Chalcogenide ◽  
Supercapacitor Application ◽  
3D Printed

Room temperature electrochemical deposition of transition metal chalcogenide (MoSx) on 3D-printed nanocarbon fibers based electrodes for custom shaped solid-state supercapacitor.

Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride

2019 ◽  
Vol 7 (16) ◽  
pp. 4817-4821 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
High Performance ◽  
Room Temperature ◽  
Band Offset ◽  
Valence Band Offset ◽  
Co Doping ◽  
Tin Telluride ◽  
Structure Engineering

Resonance states due to Bi and In co-doping, band gap enlargement, and a reduced valence-band offset in SnTe lead to a record high room-temperature ZT.

scholarly journals Gold-Hyperdoped Germanium with Room-Temperature Sub-Band-Gap Optoelectronic Response

2020 ◽  
Vol 14 (6) ◽  
Author(s):  
Hemi H. Gandhi ◽  
David Pastor ◽  
Tuan T. Tran ◽  
S. Kalchmair ◽  
L.A. Smilie ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature

scholarly journals Thermoelectromotive Force of Some Redox Couples in an Amide-type Room-temperature Ionic Liquid

2009 ◽  
Vol 77 (8) ◽  
pp. 639-641 ◽  
Author(s):  
Tsubasa MIGITA ◽  
Naoki TACHIKAWA ◽  
Yasushi KATAYAMA ◽  
Takashi MIURA
Keyword(s):  
Ionic Liquid ◽  
Room Temperature ◽  
Room Temperature Ionic Liquid ◽  
Thermoelectromotive Force ◽  
Redox Couples

Exploiting Free-Standing p-CuO/n-TiO2 Nanochannels as a Flexible Gas Sensor with High Sensitivity for H2S at Room Temperature

ACS Sensors ◽  
2021 ◽  
Vol 6 (9) ◽  
pp. 3387-3397
Author(s):  
Haoxuan He ◽  
Chenxi Zhao ◽  
Jing Xu ◽  
Kuanzhi Qu ◽  
Zhen Jiang ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Room Temperature ◽  
High Sensitivity ◽  
Free Standing

Effect of Mn Dopant on Lattice Parameters and Band Gap Energy of Semiconductor ZnO Nanoparticles

2013 ◽  
Vol 829 ◽  
pp. 784-789 ◽  
Author(s):  
Mahmoud Zolfaghari ◽  
Mahshid Chireh
Keyword(s):  
Band Gap ◽  
Zno Nanoparticles ◽  
Room Temperature ◽  
Lattice Parameters ◽  
Memory Storage ◽  
Precipitation Method ◽  
High Electron ◽  
Gap Energy ◽  
Wide Range ◽  
Ft Ir

ZnO belongs to the II-VI semiconductor group with a direct band-gap of 3.2-3.37 eV in 300K and a high exciton binding energy of 60 meV. It has good transparency, high electron mobility, wide, and strong room-temperature luminescence. These properties have many applications in a wide area of emerging applications. Doping ZnO with the transition metals gives it magnetic property at room temperature hence making it multifunctional material, i.e. coexistence of magnetic, semiconducting and optical properties. The samples can be synthesized in the bulk, thin film, and nanoforms which show a wide range of ferromagnetism properties. Ferromagnetic semiconductors are important materials for spintronic and nonvolatile memory storage applications. Doping of transition metal elements into ZnO offers a feasible means of tailoring the band gap to use it as light emitters and UV detector. As there are controversial on the energy gap value due to change of lattice parameters we have synthesized Mn-doped ZnO nanoparticles by co-precipitation method with different concentrations to study the effect of lattice parameters changes on gap energy. The doped samples were studied by XRD, SEM, FT-IR., and UV-Vis. The XRD patterns confirm doping of Mn into ZnO structure. As Mn concentrations increases the peak due to of Mn impurity in FT-IR spectra becomes more pronounces hence confirming concentrations variation. We find from UV-Vis spectra that the gap energy due to doping concentration increases due to the Goldschmidt-Pauling rule this increase depends on dopant concentrations and increases as impurity amount increases.

Tunable Band Gap in Hydrogenated Quasi-Free-Standing Graphene

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3360-3366 ◽  
Author(s):  
D. Haberer ◽  
D. V. Vyalikh ◽  
S. Taioli ◽  
B. Dora ◽  
M. Farjam ◽  
...  
Keyword(s):  
Band Gap ◽  
Free Standing ◽  
Tunable Band Gap

Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon

2006 ◽  
pp. 355-358 ◽  
Author(s):  
D J Stowe ◽  
K J Fraser ◽  
S A Galloway ◽  
S Senkader ◽  
R J Falster ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Ion Implanted

scholarly journals The Effect Of Thickness on The Optical Properties Of ZnS

2007 ◽  
Vol 4 (4) ◽  
pp. 647-652
Author(s):  
Baghdad Science Journal
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Near Infrared ◽  
High Vacuum ◽  
Ultra Violet ◽  
Infrared Region ◽  
Complex Dielectric Constant ◽  
Film Properties ◽  
Corning Glass ◽  
Different Thickness

Zinc sulfide(ZnS) thin films of different thickness were deposited on corning glass with the substrate kept at room temperature and high vacuum using thermal evaporation technique.the film properties investigated include their absorbance/transmittance/reflectance spectra,band gap,refractive index,extinction coefficient,complex dielectric constant and thickness.The films were found to exhibt high transmittance(59-98%) ,low absorbance and low reflectance in the visible/near infrared region up to 900 nm..However, the absorbance of the films were found to be high in the ultra violet region with peak around 360 nm.The thickness(using optical interference fringes method) of various films thichness(100,200,300,and 400) nm.The band gap measured was found to be in the range (3.52 -3.78 )eV.

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