scholarly journals Structural and surface analysis of chemical vapor deposited boron doped aluminum nitride thin film on aluminum substrates

2019 ◽  
Vol 37 (3) ◽  
pp. 395-403 ◽  
Author(s):  
Shanmugan Subramani ◽  
Mutharasu Devarajan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aluminum Nitride ◽  
Flow Rate ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Gas Mixture ◽  
Mixture Flow ◽  
Mixture Ratio ◽  
Aluminum Substrates

AbstractChemical vapor deposition (CVD) process was conducted for synthesis of boron (B) doped aluminum nitride (B-AlN) thin films on aluminum (Al) substrates. To prevent melting of the Al substrates, film deposition was carried out at 500 °C using tert-buthylamine (tBuNH2) solution delivered through a bubbler as a nitrogen source instead of ammonia gas (NH3). B-AlN thin films were prepared from three precursors at changing process parameters (gas mixture ratio). X-ray diffraction (XRD) technique and atomic force microscope (AFM) were used to investigate the structural and surface properties of B-AlN thin films on Al substrates. The prepared thin films were polycrystalline and composed of mixed phases {cubic (1 1 1) and hexagonal (1 0 0)} of AlN and BN with different orientations. Intensive AlN peak of high intensity was observed for the film deposited at a flow rate of the total gas mixture of 25 sccm. As the total gas mixture flow decreased from 60 sccm to 25 sccm, the crystallite size of AlN phase increased and the dislocation density decreased. Reduced surface roughness (10.4 nm) was detected by AFM for B-AlN thin film deposited on Al substrate using the lowest flow rate (25 sccm) of the total gas mixture.

scholarly journals Apparatus for Characterizing Gas-Phase Chemical Precursor Delivery for Thin Film Deposition Processes

2019 ◽  
Vol 124 ◽  
Author(s):  
James E. Maslar ◽  
William A. Kimes ◽  
Brent A. Sperling
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Volume ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optical Measurements ◽  
Deposition Processes

Thin film vapor deposition processes, e.g., chemical vapor deposition, are widely used in high-volume manufacturing of electronic and optoelectronic devices. Ensuring desired film properties and maximizing process yields require control of the chemical precursor flux to the deposition surface. However, achieving the desired control can be difficult due to numerous factors, including delivery system design, ampoule configuration, and precursor properties. This report describes an apparatus designed to investigate such factors. The apparatus simulates a single precursor delivery line, e.g., in a chemical vapor deposition tool, with flow control, pressure monitoring, and a precursor-containing ampoule. It also incorporates an optical flow cell downstream of the ampoule to permit optical measurements of precursor density in the gas stream. From such measurements, the precursor flow rate can be determined, and, for selected conditions, the precursor partial pressure in the headspace can be estimated. These capabilities permit this apparatus to be used for investigating a variety of factors that affect delivery processes. The methods of determining the pressure to (1) calculate the precursor flow rate and (2) estimate the headspace pressure are discussed, as are some of the errors associated with these methods. While this apparatus can be used under a variety of conditions and configurations relevant to deposition processes, the emphasis here is on low-volatility precursors that are delivered at total pressures less than about 13 kPa downstream of the ampoule. An important goal of this work is to provide data that could facilitate both deposition process optimization and ampoule design refinement.

Preparation of Epitaxial LiNbO3 Thin Film by MOCVD and its Properties

2008 ◽  
Vol 388 ◽  
pp. 179-182 ◽  
Author(s):  
Rintarou Morohashi ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Tomohiko Yoshioka ◽  
M. Tanaka ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Lithium niobate (LiNbO3) thin films were deposited on Al2O3(001) substrates using metal-organic chemical vapor deposition (MOCVD), with Li(dpm) and Nb(C2H5)5 as precursors. By optimizing the conditions of thin film deposition, the c-axis oriented and epitaxially grown LiNbO3 thin films with stoichiometric composition were deposited on an Al2O3(001) substrate. The refractive index of the stoichiometric LiNbO3 thin film was 2.24 at = 632.8 nm, which is close to that of bulk crystal.

Thin Film Deposition Processes

MRS Bulletin ◽  
1988 ◽  
Vol 13 (11) ◽  
pp. 18-21 ◽  
Author(s):  
Russell Messier
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Energy Efficiency ◽  
Optical Fibers ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Hard Coatings ◽  
Antireflection Coatings ◽  
Deposition Processes

Thin film materials pervade our everyday life as transparent conductors in LCD watches and computer displays and in defrosters for automobiles... antireflection coatings for camera lenses… optical fibers for communication … architectural glass coatings for both color and energy efficiency… solar cells… decorative coatings on plastics such as for toys and automobiles parts… a whole host of electronic and optoelectronic devices… hard coatings for cutting tools, drill bits, and bearings … even metallic coatings inside potato chip bags to keep the chips crisp!Without thin films our lifestyles would be drastically different. And this trend toward increased use of thin film technology will only continue.The varied reasons for using thin films and the specific deposition processes for preparing them are often complex; but usually relate to function, cost, beauty, materials and energy efficiency, and performance. In addition to technological applications, scientists are finding thin films to be an invaluable tool for investigating new physical phenomena, even at the quantum level. For instance, two of the most important new materials—high temperature ceramic superconductors and diamond coatings — are currently being made by several thin film deposition processes in order to explore both their scientific and technological potential.Just 25 years ago the variety of deposition processes for preparing thin films was quite limited. Thin film scientists and technologists had at their disposal electrodeposition, elementary chemical vapor deposition, evaporation, and dc sputtering. Commercial equipment for electron-beam evaporation, a mainstay in the optical coatings industry, was just being developed. Most of the deposition processes reviewed in this and next month's MRS BULLETIN were either not commercially available or were not even conceived of then.

scholarly journals Reactive Chemical Vapor Deposition Method as New Approach for Obtaining Electroluminescent Thin Film Materials

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
Valentina V. Utochnikova ◽  
Oxana V. Kotova ◽  
Andrey A. Vaschenko ◽  
Leonid S. Lepnev ◽  
Alexei G. Vitukhnovsky ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Chemical Vapor Deposition Method ◽  
Aromatic Carboxylates ◽  
Terbium Ion

The new reactive chemical vapor deposition (RCVD) method has been proposed for thin film deposition of luminescent nonvolatile lanthanide aromatic carboxylates. This method is based on metathesis reaction between the vapors of volatile lanthanide dipivaloylmethanate (Ln(dpm)3) and carboxylic acid (HCarb orH2Carb′) and was successfully used in case of HCarb. Advantages of the method were demonstrated on example of terbium benzoate (Tb(bz)3) ando-phenoxybenzoate thin films, and Tb(bz)3thin films were successfully examined in the OLED with the following structure glass/ITO/PEDOT:PSS/TPD/Tb(bz)3/Ca/Al. Electroluminescence spectra of Tb(bz)3showed only typical luminescent bands, originated from transitions of the terbium ion. Method peculiarities for deposition of compounds of dibasic acids H2Carb′ are established on example of terbium and europium terephtalates and europium 2,6-naphtalenedicarboxylate.

Amorphous Hydrogenated Silicon (a-Si:H) Photovoltaic Thin Films Deposited onto Ultra-Low Density Aerogels

1991 ◽  
Vol 219 ◽  
Author(s):  
S. P. Hotaling ◽  
F. P. Proni
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Low Density ◽  
Transient Time ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Photonic Sensors

ABSTRACTAmorphous Hydrogenated Silicon (a-Si:H) photovoltaic thin films have been deposited onto ultra low density (ULD) silica aerogel substrates using plasma enhanced chemical vapor deposition (PECVD). The techniques and results of ULD aerogel fabrication, surface treatment, thin film deposition and photovoltaic (PV) characterization are discussed. DC photbcurrent and transient time of flight measurements were performed for the PV characterization, while ellipsometry, transmission optical spectrophotometry, scanning electron microscopy (SEM) and low magnification optical microscopy (×64) were used to obtain qualitative and quantitative surface morphology, microstructure and film thickness data. This research indicates that ULD aerogels may be used as substrates for dielectric and metallic thin films which have electrical, optical and mechanical properties comparable to films deposited onto conventional substrates such as glass, metals or plastics. These data taken together with the lightweight of the ULD aerogels may be of interest to the space based sensor community as a possible route to large, lightweight photonic sensors or PV arrays. These results thus indicate that ULD aerogels could be used as substrate materials for other thin films of interest to the PV community, for example, we have produced ultra lightweight reflective optics using this fusion of solgel and thin film technologies [1].

Observation of Large, Anomalous Pyroelectric Response in AlN Thin Films

2011 ◽  
Vol 1288 ◽  
Author(s):  
Everett Crisman ◽  
Vladimir Vasilyev ◽  
Alvin Drehman ◽  
Richard Webster
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aluminum Nitride ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Pyroelectric Effect ◽  
Crystalline Structures ◽  
Preliminary Annealing ◽  
Residual Strains ◽  
Pyroelectric Response

ABSTRACTWe have observed a pyroelectric effect (PE) in reactively sputtered aluminum nitride (AlN) thin films that is typically a factor of twenty greater than commercial pyroelectric materials such as triglycine sulfate (TGS). This is most likely due to an extrinsic effect since the known crystalline structures of AlN are too symmetric to allow such high values for the PE response. Preliminary annealing studies support the assumption that residual strains remaining from the AlN thin film deposition are the most likely source of the anomalously high PE response. The results of these studies are presented along with some measurements that indicate a still higher PE response might be obtainable.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

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