scholarly journals Analisa Rekonfigurasi Jaringan Distribusi 20 kV Pada Penyulang Berawa Untuk Menurunkan Losses dan Drop Tegangan Penyaluran Tenaga Listrik

2019 ◽  
Vol 6 (2) ◽  
pp. 67
Author(s):  
I Gusti Nyoman Indra Wiguna ◽  
I Gede Dyana Arjana ◽  
Tjok. Gede Indra P
Keyword(s):  
High Voltage ◽  
Voltage Drop ◽  
Peak Load ◽  
Channel Length ◽  
Limit Set ◽  
Very High ◽  
Maximum Limit

Peak load on Berawa Feeder is very high exceeding the maximum limit set by PLN which causes Losses and high voltage drop values, so reconfiguration of Repeater via LBS Canggu Club and LBS Damai Residance is carried out, using 3 distribution points. The flow before being reconfigured in the Swamp Feeder was 242A to 180.2A, while the previous Bumbak Feeder was 82A to 144.7A. losses previous deliveries of Bumbak Feederwere 5.2kW to 22.15kW, while previous Berawa Berulang was 117.1kW to 55.11kW, drop the previous Bumbak Feeder voltagewas 102kVA to 24kVA, whereas the previous Swamp Feeder was 775.4kVA to 490.2kVA. Load surges and decreases are caused by changes in load and channel length after being reconfigured.

scholarly journals Simulasi Pengaruh Variasi Konduktor Berkas Terhadap Gangguan Berisik Dan Radio Interferensi Pada Saluran Udara Tegangan Ekstra Tinggi 275kV

2020 ◽  
Vol 17 (2) ◽  
pp. 139
Author(s):  
Sonong Sonong ◽  
Herman Nawir ◽  
Fitrawati Suharti ◽  
Insan Kamil
Keyword(s):  
Transmission Line ◽  
High Voltage ◽  
Noise Level ◽  
Voltage Drop ◽  
Radio Interference ◽  
Radio Noise ◽  
Noise Interference ◽  
Design Guide ◽  
Extra High Voltage ◽  
Maximum Limit

The use of extra-high voltage lines can increase efficiency and reduce voltage drop but cause corona generation. Corona that occurs increases channeling losses and causes disruption to the environment in the form of Audible Noise (AN) and Radio Interference (RI). Audible Noise (AN) and Radio Interference (RI) that are too large will disturb the community around the transmission line. The use of a bundle conductor is a way to reduce the risk of corona. This paper discusses the effect of variations in the bundle conductor on noise interference and radio interference in 275kV extra-high-voltage air lines (SUTET). The types of variations include variations in the number of beams, variations in the distance between sub-conductors, and variations in diameter of the conductor. Next, the Audible Noise (AN) and Radio interference (RI) values are calculated for the Latuppa (Palopo) - Pomana channel planning. The results of the calculation of AN and RI values on SUTET 275kV are still included as safe criteria because the value is still below the criteria limits of Perry and SPLN 46-1-1981 concerning the Noise Level Limitation Guidelines and the IEEE Radio Noise Design Guide about the maximum limit of RI.

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

2014 ◽  
Vol 778-780 ◽  
pp. 135-138 ◽  
Author(s):  
Tetsuya Miyazawa ◽  
Shi Yang Ji ◽  
Kazutoshi Kojima ◽  
Yuuki Ishida ◽  
Koji Nakayama ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Voltage ◽  
Growth Process ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Voltage Drop ◽  
Minority Carrier Lifetime ◽  
Forward Voltage ◽  
Forward Voltage Drop ◽  
Very High

The epitaxial growth of thick multi-layer 4H-SiC to fabricate very high-voltage C-face n-channel IGBTs is demonstrated using 3-inch diameter wafers. We employ an inverted-growth process, which enables the on-state voltage of resultant IGBTs to be reduced. Furthermore a long minority carrier lifetime (> 10 μs) and a low-resistance p+epilayer can reduce the forward voltage drop of the IGBTs. The small forward voltage drop is demonstrated particularly at high temperatures by fabricating and characterizing simple pin diodes using the epi-wafer.

Circuit Voltage Probe Based on Time-Integrated Measurements of Optical Emission From Leakage Current

2002 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
James C. Tsang ◽  
Moyra K. McManus ◽  
Mark B. Ketchen
Keyword(s):  
Leakage Current ◽  
Voltage Drop ◽  
Optical Emission ◽  
Channel Length ◽  
Operating Conditions ◽  
Power Circuit ◽  
Hot Carrier ◽  
Optical Inspection ◽  
Low Threshold ◽  
Circuit Power

Abstract Hot-carrier luminescence emission is used to diagnose the cause of excess quiescence current, IDDQ, in a low power circuit implemented in CMOS 7SF technology. We found by optical inspection of the chip that the high IDDQ is related to the low threshold, Vt, device process and in particular to transistors with minimum channel length (0.18 μm). In this paper we will also show that it is possible to gain knowledge regarding the operating conditions of the IC from the analysis of optical emission due to leakage current, aside from simply locating defects and failures. In particular, we will show how it is possible to calculate the voltage drop across the circuit power grid from time-integrated acquisitions of leakage luminescence.

scholarly journals Portable DC Supply Based on SiC Power Devices for High-Voltage Marx Generator

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 313
Author(s):  
Jacek Rąbkowski ◽  
Andrzej Łasica ◽  
Mariusz Zdanowski ◽  
Grzegorz Wrona ◽  
Jacek Starzyński
Keyword(s):  
High Voltage ◽  
Specific Area ◽  
Input Voltage ◽  
Marx Generator ◽  
Power Devices ◽  
Laboratory Setup ◽  
High Voltage Gain ◽  
Main Components ◽  
Two Stages ◽  
Very High

The paper describes major issues related to the design of a portable SiC-based DC supply developed for evaluation of a high-voltage Marx generator. This generator is developed to be a part of an electromagnetic cannon providing very high voltage and current pulses aiming at the destruction of electronics equipment in a specific area. The portable DC supply offers a very high voltage gain: input voltage is 24 V, while the generator requires supply voltages up to 50 kV. Thus, the system contains two stages designed on the basis of SiC power devices operating with frequencies up to 100 kHz. At first, the input voltage is boosted up to 400 V by a non-isolated double-boost converter, and then a resonant DC-DC converter with a special transformer elevates the voltage to the required level. In the paper, the main components of the laboratory setup are presented, and experimental results of the DC supply and whole system are also shown.

Proposal of New Interconnection Technique for Very High-Voltage IC's

1996 ◽  
Vol 35 (Part 1, No. 11) ◽  
pp. 5655-5663 ◽  
Author(s):  
Tatsuhiko Fujihira ◽  
Yukio Yano ◽  
Shigeyuki Obinata ◽  
Naoki Kumagai ◽  
Kenya Sakurai
Keyword(s):  
High Voltage ◽  
Very High

Comparison of the Forward Voltage Drop of Si and SiC High Voltage Diodes

2014 ◽  
Vol 64 (7) ◽  
pp. 223-236 ◽  
Author(s):  
T. Gachovska ◽  
J. L. Hudgins
Keyword(s):  
High Voltage ◽  
Voltage Drop ◽  
Forward Voltage ◽  
Forward Voltage Drop

4H-SIC Dmosfets for High Frequency Power Switching Applications

2003 ◽  
Vol 764 ◽  
Author(s):  
Sei-Hyung Ryu ◽  
Anant K. Agarwal ◽  
James Richmond ◽  
John W. Palmour
Keyword(s):  
High Voltage ◽  
High Speed ◽  
High Performance ◽  
High Frequency Power ◽  
Power Devices ◽  
Power Switching ◽  
High Speed Switching ◽  
Unipolar Devices ◽  
Very High ◽  
Frequency Power

AbstractVery high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.

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