Development of an AC Electrical Field Tribochemical Polishing Technique to Promote High-Efficiency Polishing for Glass Substrates

2012 ◽  
Vol 78 (4) ◽  
pp. 316-320
Author(s):  
Hiroshi IKEDA ◽  
Yoichi AKAGAMI ◽  
Michio UNEDA ◽  
Osamu OHNISHI ◽  
Syuhei KUROKAWA ◽  
...  
Keyword(s):  
High Efficiency ◽  
Electrical Field ◽  
Glass Substrates

Flexible ITO‐Free Organic Photovoltaics on Ultra‐Thin Flexible Glass Substrates with High Efficiency and Improved Stability

Solar RRL ◽  
2019 ◽  
Vol 3 (4) ◽  
pp. 1800286 ◽  
Author(s):  
Xiao Wang ◽  
Hui Jin ◽  
Ravi C. R. Nagiri ◽  
Beta Z. L. Poliquit ◽  
Jegadesan Subbiah ◽  
...  
Keyword(s):  
Organic Photovoltaics ◽  
High Efficiency ◽  
Glass Substrates ◽  
Improved Stability

AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING

2008 ◽  
Vol 22 (14) ◽  
pp. 2275-2283 ◽  
Author(s):  
WEIDONG CHEN ◽  
LIANGHUAN FENG ◽  
ZHI LEI ◽  
JINGQUAN ZHANG ◽  
FEFE YAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Efficiency ◽  
Dark Conductivity ◽  
Aluminum Antimonide ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Grain Size ◽  
P Type ◽  
20 Nm

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.

Ultrasonic Coring of Glass Disks Using Double Core Tool

2011 ◽  
Vol 325 ◽  
pp. 436-441 ◽  
Author(s):  
Shigeomi Koshimizu
Keyword(s):  
High Precision ◽  
Ultrasonic Vibration ◽  
High Efficiency ◽  
Thrust Force ◽  
Recording Media ◽  
High Quality ◽  
Magnetic Disk ◽  
Glass Substrates ◽  
Ultraviolet Curable ◽  
Produce Glass

Glass disks are used as substrates for the recording media in magnetic disk devices. To mass produce glass disks, a technology is required for machining glass (a material that is difficult to machine) with both high precision and high efficiency. Consequently, this study adopted a method that processes the inner- and outer-diameters simultaneously using a double core tool. In addition, the thrust force in coring process was also reduced using an ultrasonic spindle to apply ultrasonic vibration to the feed direction of the rotating tool. This resulted in high quality machining with less chipping. Furthermore, this study conducted experiments to compare the three methods of stabilizing the stack of glass substrates. As a result, it was found that the method using ultraviolet curable resin was able to limit the chipping to a smaller size.

New Approach Towards The Deposition of I-III-VI Thin Films

2001 ◽  
Vol 692 ◽  
Author(s):  
Mohammad Afzaal ◽  
David Crouch ◽  
Paul O'Brien ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
High Efficiency ◽  
Chemical Vapour ◽  
One Pot ◽  
Optimum Growth Temperature ◽  
Glass Substrates ◽  
Show Evidence ◽  
Organometallic Precursors

AbstractThe ternary chalcopyrite semiconductor Cu(In/Ga)(Se/S)2 is currently used as an absorber layer in high efficiency thin film solar cells. In this study, various types of I-III-VI (I = Cu, III = Ga or In, VI = S or Se) thin films (CuGaS2, CuInS2 and CuInSe2) were prepared from a series of organometallic precursors, M[(S/Se)2CNMeR]n (M = Cu, In, Ga; R = alkyl) by aerosol-assisted chemical vapour deposition (AACVD). In contrast to the metal alkyl compounds, MR3 (M = In and Ga; R = alkyl), which are pyrophoric, the precursors are easy to synthesize by one-pot reactions and are air stable. The optimum growth temperature for the preparation of these films on glass substrates using aerosol-assisted chemical vapour deposition (AACVD) was found to be above 400 °C in terms of crystallinity, although deposition does occur at lower temperatures. The films have been characterised using XRPD, SEM and EDS. SEM analyses show all films are microcrystalline. XRPD results show evidence of the crystalline nature of theses films. The results of this comprehensive study are presented and discussed.

scholarly journals Development of a High Efficiency Polishing Technology Using Abrasive Control Technique with AC Electric Field for Glass Substrates

2011 ◽  
Vol 77 (12) ◽  
pp. 1146-1150 ◽  
Author(s):  
Hiroshi IKEDA ◽  
Yoichi AKAGAMI ◽  
Michio UNEDA ◽  
Osamu OHNISHI ◽  
Syuhei KUROKAWA ◽  
...  
Keyword(s):  
Electric Field ◽  
High Efficiency ◽  
Control Technique ◽  
Glass Substrates ◽  
Ac Electric Field

Buried-Layer Bared AZO/TiO2 Semiconductor Coupled Films and their Photocatalytic Properties

2009 ◽  
Vol 620-622 ◽  
pp. 707-710 ◽  
Author(s):  
Xi Wen Zhang ◽  
Cen Cen Liu ◽  
Gao Rong Han
Keyword(s):  
Rf Magnetron Sputtering ◽  
Double Layers ◽  
Layered Semiconductor ◽  
Electron Hole ◽  
Electrical Field ◽  
Glass Substrates ◽  
Dye Decomposition ◽  
Post Annealing ◽  
Silver Mirror ◽  
Buried Layer

AZO/TiO2 double-layered semiconductor coupled films were prepared through sequentially depositing AZO and TiO2 films on glass substrates by radio frequency (RF) magnetron sputtering. PVP-pretreatment and post-annealing were performed on these double-layers to achieve an exposure of the AZO buried-layer in different baring conditions. The photocatalytic efficiencies of these buried-layer bared structures were measured through dye decomposition under ultraviolet irradiation. Silver mirror reactions were operated to explore a possible photocatalytic mechanism associated with these buried-layer bared conditions. The buried-layer bared AZO/TiO2 coupled films present 2 ~3 times of photocatalytic activity comparing to the normal AZO/TiO2 double-layered or single layered ones. It suggested that the self-built electrical field formed from coupling semiconductors reduces the recombination of electron-hole pairs, increases the yield of surface photogenerated charges, and enhances the photocatalysis.

Novel Wide-Band-Gap Ag(In1-xGax)Se2 Thin Film Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Tokio Nakada ◽  
Keiichiro Yamada ◽  
Ryota Arai ◽  
Hiroki Ishizaki ◽  
Naoomi Yamada
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
High Efficiency ◽  
Wide Band ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Wide Band Gap ◽  
Area Efficiency ◽  
Glass Substrates

AbstractAg(In1-xGax)Se2 thin films have been deposited on Mo-coated soda-lime glass substrates by the three-stage process using a molecular beam epitaxy (MBE) system. We found a remarkable decrease in the substrate temperature during the 2nd stage in which the film composition changes to a Ag excess. A single phase chalcopyrite AIGS thin film with a slightly Ag poor composition was obtained by using the temperature monitoring composition method. The cell performance of the AIGS thin film solar cell was found to strongly depend on the Ga/(In+Ga) and Ag/(In+Ga) atomic ratios.A high efficiency wide-gap (Eg=1.7eV) Ag(In0.2Ga0.8)Se2 thin film solar cell with a total-area efficiency of 9.3% (10.2% active area efficiency), Voc = 949mV, Jsc = 17.0 mA/cm2, FF = 0.577, and total area = 0.42 cm2 was achieved. The junction formation mechanism of AIGS devices is discussed based on electron beam induced current (EBIC) and scanning capacitance microscopy (SCM) analyses.

High-efficiency, flexible CdTe solar cells on ultra-thin glass substrates

2015 ◽  
Vol 106 (13) ◽  
pp. 133501 ◽  
Author(s):  
H. P. Mahabaduge ◽  
W. L. Rance ◽  
J. M. Burst ◽  
M. O. Reese ◽  
D. M. Meysing ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Thin Glass ◽  
Glass Substrates ◽  
Cdte Solar Cells

FERROELECTRIC PROPERTIES OF CaBi4Ti4O15 THIN FILMS ON ITO/GLASS SUBSTRATES PREPARED BY SOL-GEL TECHNOLOGY

2012 ◽  
Vol 06 ◽  
pp. 91-97
Author(s):  
CHIEN-MIN CHENG ◽  
MING-CHANG KUAN ◽  
KAI-HUNAG CHEN ◽  
JEN-HWAN TSAI
Keyword(s):  
Thin Films ◽  
Leakage Current Density ◽  
Current Density ◽  
Coercive Field ◽  
Glass Substrate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Electrical Field ◽  
Glass Substrates ◽  
Ito Glass

In this study, ferroelectric CaBi 4 Ti 4 O 15 (CBT) thin films prepared by sol-gel method and deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices were fabricated and investigated. The electrical and physical characteristics of as-deposited and annealed CBT thin films for metal-ferroelectric-metal (MFM) structures was discussed and investigated. In addition, the ferroelectric properties in annealed CBT thin films on ITO/glass substrate showed and exhibited clear polarization versus electrical field curves. From p - E curves, the 2 P r value and coercive field of annealed CBT thin films were calculated to be 10μC/cm2 and 180 kV/cm, respectively. Finally, the maximum capacitance, leakage current density, and transmittance within the ultraviolet-visible (UV–vis) spectrum were also investigated and discussed.

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