A Highly Durable Double Edge Triggered D-Flip Flop Based Shift Registers using 10nM CNTFET Technology

2013 ◽  
Vol 3 (4) ◽  
pp. 4-12
Author(s):  
Ravi T. ◽  
◽  
Kannan V. ◽  
Keyword(s):  
Author(s):  
GOPALA KRISHNA.M ◽  
UMA SANKAR.CH ◽  
NEELIMA. S ◽  
KOTESWARA RAO.P

In this paper, presents circuit design of a low-power delay buffer. The proposed delay buffer uses several new techniques to reduce its power consumption. Since delay buffers are accessed sequentially, it adopts a ring-counter addressing scheme. In the ring counter, double-edge-triggered (DET) flip-flops are utilized to reduce the operating frequency by half and the C-element gated-clock strategy is proposed. Both total transistor count and the number of clocked transistors are significantly reduced to improve power consumption and speed in the flip-flop. The number of transistors is reduced by 56%-60% and the Area-Speed-Power product is reduced by 56%-63% compared to other double edge triggered flip-flops. This design is suitable for high-speed, low-power CMOS VLSI design applications.


2021 ◽  
Vol 3 ◽  
pp. 1-4
Author(s):  
Wing-Kong Ng ◽  
Wing-Shan Tam ◽  
Chi-Wah Kok
Keyword(s):  

2019 ◽  
Vol 29 (08) ◽  
pp. 2050123 ◽  
Author(s):  
Neethu Anna Sabu ◽  
K. Batri

One of the paramount issues in the field of VLSI design is the rapid increase in power consumption. Therefore, it is necessary to develop power-efficient circuits. Here, three new simple architectures are presented for a Dynamic Double Edge Triggered Flip-flop named as Transistor Count Reduction Flip-flop, S-TCRFF (Series Stacking in TCRFF) and FST in TCRFF (Forced Stacking of Transistor in TCRFF). The first one features a dynamic design comprising of transmission gate in which total transistor count has greatly reduced without affecting the logic, thereby attaining better power and speed performance. For the reduction of static power, two types of stacking called series and forced transistor stacking are applied. The circuits are simulated using Cadence Virtuoso in 45[Formula: see text]nm CMOS technology with a power supply of 1[Formula: see text]V at 500[Formula: see text]MHz when input switching activity is 25%. The simulated results indicated that the new designs (TCRFF, S-TCRFF and FST in TCRFF) excelled in different circuit performance indices like Power-Delay-Product (PDP), Energy-Delay-Product (EDP), average and leakage power with less layout area compared with the performance of nine recently proposed FF designs. The improvement in PDPdq value was up to 89.2% (TCRFF), 89.9% (S-TCRFF) and 90.3% (FST in TCRFF) with conventional transmission gate FF (TGFF).


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