Impurities influence of sulfur, phosphorous and silicon on structure and properties of single-crystals of nickel-based heat-resistant superalloys

2018 ◽  
Vol 0 (8) ◽  
pp. 13-18 ◽  
Author(s):  
P. G. Min ◽  
◽  
D. Ye. Kablov ◽  
V. V. Sidorov ◽  
V. Ye. Vadeyev ◽  
...  
2019 ◽  
Vol 1347 ◽  
pp. 012119
Author(s):  
G S Burkhanov ◽  
V S Yusupov ◽  
V M Kirillova ◽  
V V Sdobyrev ◽  
V A Dement’ev ◽  
...  

1981 ◽  
Vol 7 ◽  
Author(s):  
C. J. Mchargue ◽  
H. Naramoto ◽  
B. R. Appleton ◽  
C. W. White ◽  
J. M. Williams

ABSTRACTSingle crystals of Al2O3 were implanted with chromium and zirconium to fluences of 1 × 1016 to 1 × 1017 ions cm−2. Rutherford backscattering-channeling studies showed the surface layers to be damaged but crystalline with the implanted ions randomly distributed. The microhardness and indentation fracture toughness were higher for the random solutions than for conventionally formed solid solutions. Changes in structure and properties caused by annealing in air at temperatures up to 1800°C were studied.


2020 ◽  
Vol 22 (5) ◽  
pp. 3105-3111 ◽  
Author(s):  
Chao Wu ◽  
Daoyou Guo ◽  
Peigang Li ◽  
Shunli Wang ◽  
Aiping Liu ◽  
...  

Four types of organic cation-mixed single crystals were successfully synthesized by partially substituting A site cations to investigate the effect of organic cations on structure, optical features, thermal stability, and electrical transport properties.


1985 ◽  
Vol 27 (11) ◽  
pp. 843-848
Author(s):  
S. I. Tishaev ◽  
R. A. Zykova ◽  
Yu. M. Politaev ◽  
S. P. Belyi ◽  
L. K. Orzhitskaya

1998 ◽  
Vol 5 (3) ◽  
pp. 239-245 ◽  
Author(s):  
A. Erko ◽  
M. Veldkamp ◽  
W. Gudat ◽  
N. V. Abrosimov ◽  
S. N. Rossolenko ◽  
...  

Using X-ray diffractometry and spectral measurements, the structure and properties of graded X-ray optical elements have been examined. Experimental and theoretical data on X-ray supermirrors, which were prepared by the magnetron sputtering technique using precise thickness control, are reported. Measurements on graded aperiodic Si1−x Ge x single crystals, which were grown by the Czochralski technique, are also presented. The lattice parameter of such a crystal changes almost linearly with increasing Ge concentration. The measurements indicate that Si1−x Ge x crystals with concentrations up to 7 at.% Ge can be grown with a quality comparable to that of pure Si crystals.


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