Failure Analysis of Killer Defects and Yield Enhancement of Flat ROM Devices in Wafer Fabrication

2000 ◽  
Author(s):  
Y. N. Hua ◽  
Z. R. Guo ◽  
L. H. An ◽  
Shailesh Redkar
Keyword(s):  
Electron Microscope ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Wafer Fabrication ◽  
X Ray ◽  
Particle Contamination ◽  
Emission Microscopy ◽  
Microscopy Techniques ◽  
Scanning Electron

Abstract In this paper, some low yield cases in Flat ROM device (0.45 and 0.6 µm) were investigated. To find killer defects and particle contamination, KLA, bitmap and emission microscopy techniques were used in fault isolation. Reactive ion etching (RIE) and chemical delayering, 155 Wright Etch, BN+ Etch and scanning electron microscope (SEM) were used for identification and inspection of defects. In addition, energy-dispersive X-ray microanalysis (EDX) was used to determine the composition of the particle or contamination. During failure analysis, seven kinds of killer defects and three killer particles were found in Flat ROM devices. The possible root causes, mechanisms and elimination solutions of these killer defects/particles were also discussed.

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

X-ray micro tomography in the scanning electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 106-107 ◽  
Author(s):  
W. Brünger
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Target Surface ◽  
The Body ◽  
X Rays ◽  
Cross Sectional ◽  
X Ray ◽  
Micro Tomography ◽  
Scanning Electron

Reconstructive tomography is a new technique in diagnostic radiology for imaging cross-sectional planes of the human body /1/. A collimated beam of X-rays is scanned through a thin slice of the body and the transmitted intensity is recorded by a detector giving a linear shadow graph or projection (see fig. 1). Many of these projections at different angles are used to reconstruct the body-layer, usually with the aid of a computer. The picture element size of present tomographic scanners is approximately 1.1 mm2.Micro tomography can be realized using the very fine X-ray source generated by the focused electron beam of a scanning electron microscope (see fig. 2). The translation of the X-ray source is done by a line scan of the electron beam on a polished target surface /2/. Projections at different angles are produced by rotating the object.During the registration of a single scan the electron beam is deflected in one direction only, while both deflections are operating in the display tube.

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

PHAX-SCAN: Functional integration of a Scanning Electron Microscope and an energy-dispersive x-ray analyser

1989 ◽  
Vol 47 ◽  
pp. 56-57
Author(s):  
Marc H. Peeters ◽  
Max T. Otten
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
Functional Integration ◽  
Energy Dispersive ◽  
X Rays ◽  
X Ray ◽  
High Speed Analysis ◽  
Scanning Electron

Over the past decades, the combination of energy-dispersive analysis of X-rays and scanning electron microscopy has proved to be a powerful tool for fast and reliable elemental characterization of a large variety of specimens. The technique has evolved rapidly from a purely qualitative characterization method to a reliable quantitative way of analysis. In the last 5 years, an increasing need for automation is observed, whereby energy-dispersive analysers control the beam and stage movement of the scanning electron microscope in order to collect digital X-ray images and perform unattended point analysis over multiple locations.The Philips High-speed Analysis of X-rays system (PHAX-Scan) makes use of the high performance dual-processor structure of the EDAX PV9900 analyser and the databus structure of the Philips series 500 scanning electron microscope to provide a highly automated, user-friendly and extremely fast microanalysis system. The software that runs on the hardware described above was specifically designed to provide the ultimate attainable speed on the system.

PENGGUNAAN TiO2 PARTIKEL NANO HASIL SINTESIS BERBASIS AIR MENGGUNAKAN METODA SOL-GEL PADA BAHAN KAPAS SEBAGAI APLIKASI UNTUK TEKSTIL ANTI UV

Arena Tekstil ◽  
2013 ◽  
Vol 28 (1) ◽  
Author(s):  
Maya Komalasari ◽  
Bambang Sunendar
Keyword(s):  
Fourier Transform ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sol Gel ◽  
Crosslinking Agent ◽  
X Ray Diffraction ◽  
Nano Tio2 ◽  
X Ray ◽  
Infra Red ◽  
Scanning Electron

Partikel nano TiO2 berbasis air dengan pH basa telah berhasil disintesis dengan menggunakan metode sol-gel dan diimobilisasi pada kain kapas dengan menggunakan kitosan sebagai zat pengikat silang. Sintesis dilakukan  dengan prekursor TiCl4 pada konsentrasi 0,3 M, 0,5 M dan 1 M, dan menggunakan templat kanji dengan proses kalsinasi pada suhu 500˚C selama 2 jam. Partikel nano TiO2 diaplikasikan ke kain kapas dengan metoda pad-dry-cure dan menggunakan kitosan sebagai crosslinking agent. Berdasarkan hasil Scanning Electron Microscope (SEM),diketahui bahwa morfologi partikel TiO2 berbentuk spherical dengan ukuran nano (kurang dari 100 nm). Karakterisasi X-Ray Diffraction (XRD) menunjukkan adanya tiga tipe struktur kristal utama, yaitu (100), (101) dan (102) dengan fasa kristal yang terbentuk adalah anatase dan rutile. Pada karakterisasi menggunakan SEM terhadap serbuk dari TiO2 yang telah diaplikasikan ke permukaan kain kapas, terlihat adanya imobilisasi partikel nano TiO2 melalui ikatan hidrogen silang dengan kitosan pada kain kapas. Hasil analisa tersebut kemudian dikonfirmasi dengan FTIR (Fourier Transform Infra Red) yang hasilnya memperlihatkan puncak serapan pada bilangan gelombang 3495 cm-1, 2546 cm-1, dan 511 cm-1,  yang masing-masing diasumsikan sebagai adanya vibrasi gugus fungsi O-H, N-H dan Ti-O-Ti. Hasil SEM menunjukkan pula bahwa kristal nano yang terbentuk diantaranya adalah fasa rutile , yang berdasarkan literatur terbukti dapatberfungsi sebagai anti UV.

A New Failure Analysis Flow of Gate Oxide Integrity Failure in Wafer Fabrication

2009 ◽  
Author(s):  
Hua Younan ◽  
Chu Susan ◽  
Gui Dong ◽  
Mo Zhiqiang ◽  
Xing Zhenxiang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Defect Density ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Fault Isolation ◽  
Wafer Fabrication ◽  
Root Cause ◽  
Gate Oxide Integrity

Abstract As device feature size continues to shrink, the reducing gate oxide thickness puts more stringent requirements on gate dielectric quality in terms of defect density and contamination concentration. As a result, analyzing gate oxide integrity and dielectric breakdown failures during wafer fabrication becomes more difficult. Using a traditional FA flow and methods some defects were observed after electrical fault isolation using emission microscopic tools such as EMMI and TIVA. Even with some success with conventional FA the root cause was unclear. In this paper, we will propose an analysis flow for GOI failures to improve FA’s success rate. In this new proposed flow both a chemical method, Wright Etch, and SIMS analysis techniques are employed to identify root cause of the GOI failures after EFA fault isolation. In general, the shape of the defect might provide information as to the root cause of the GOI failure, whether related to PID or contamination. However, Wright Etch results are inadequate to answer the questions of whether the failure is caused by contamination or not. If there is a contaminate another technique is required to determine what the contaminant is and where it comes from. If the failure is confirmed to be due to contamination, SIMS is used to further determine the contamination source at the ppm-ppb level. In this paper, a real case of GOI failure will be discussed and presented. Using the new failure analysis flow, the root cause was identified to be iron contamination introduced from a worn out part made of stainless steel.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

2013 ◽  
Author(s):  
Erik Paul ◽  
Holger Herzog ◽  
Sören Jansen ◽  
Christian Hobert ◽  
Eckhard Langer
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Case Studies ◽  
State Of The Art ◽  
Root Cause ◽  
Highly Efficient ◽  
Technology Nodes ◽  
Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

Advanced Scan Diagnosis Based Fault Isolation and Defect Identification for Yield Learning

2005 ◽  
Author(s):  
Chris Eddleman ◽  
Nagesh Tamarapalli ◽  
Wu-Tung Cheng
Keyword(s):  
Failure Analysis ◽  
Fault Location ◽  
Effective Means ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Yield Analysis ◽  
Isolation Techniques ◽  
Yield Learning ◽  
Time Required ◽  
Inspection Data

Abstract Yield analysis of sub-micron devices is an ever-increasing challenge. The difficulty is compounded by the lack of in-line inspection data as many companies adopt foundry or fab-less models for acquiring wafers. In this scenario, failure analysis is increasingly critical to help drive yields. Failure analysis is a process of fault isolation, or a method of isolating failures as precisely as possible followed by identification of a physical defect. As the number of transistors and metal layers increase, traditional fault isolation techniques are less successful at isolating a cause of failures. Costs are increasing due to the amount of time needed to locate the physical defect. One solution to the yield analysis problem is scan diagnosis based fault isolation. Previous scan diagnosis based techniques were limited with little information about the type of fault and confidence of diagnosis. With new scan diagnosis algorithms it is now possible to not only isolate, but to identify the type of fault as well as assigning a confidence ranking prior to any destructive analysis. This paper presents multiple case studies illustrating the application of scan diagnosis as an effective means to achieve yield enhancement. The advanced scan diagnostic tool used in this study provides information about the fault type as well as fault location. This information focuses failure analysis efforts toward a suspected defect, decreasing the cycle time required to determine root cause, as well as increasing the over all success rate.

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