X-ray Diffraction Investigation of Stainless Steel—Nitrogen Thin Films Deposited Using Reactive Sputter Deposition

An X-ray diffraction investigation was carried out on nitrogen-containing 304 stainless steel thin films deposited by reactive rf magnetron sputtering over a range of substrate temperature and bias levels. The resulting films contained between ~28 and 32 at.% nitrogen. X-ray analysis was carried out using both the standard Bragg-Brentano method as well as area-detector diffractometry analysis. The extent of the diffraction anomaly ((002) peak shift) was determined using a calculated parameter, denoted RB, which is based on the (111) and (002) peak positions. The normal value for RB for FCC-based structures is 0.75 but increases as the (002) peak is anomalously displaced closer to the (111) peak. In this study, the RB values for the deposited films were found to increase with substrate bias but decrease with substrate temperature (but still always >0.75). Using area detector diffractometry, we were able to measure d111/d002 values for similarly oriented grains within the films, and using these values calculate c/a ratios based on a tetragonal-structure model. These results allowed prediction of the (002)/(200) peak split for tetragonal structures. Despite predicting a reasonably accessible split (~0.6°–2.9°–2θ), no peak splitting observed, negating the tetragonal-structure hypothesis. Based on the effects of film bias/temperature on RB values, a defect-based hypothesis is more viable as an explanation for the diffraction anomaly.

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Stacking Faults in a High Nitrogen Face-Centered-Cubic Phase Formed on Nitrogen-Modified Austenitic Stainless Steel

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.373-374.318 ◽

2008 ◽

Vol 373-374 ◽

pp. 318-321

Author(s):

J. Liang ◽

M.K. Lei

Keyword(s):

Stainless Steel ◽

Plasma Source ◽

Peak Shift ◽

Cubic Phase ◽

Face Centered Cubic ◽

X Ray Diffraction ◽

High Nitrogen ◽

X Ray ◽

Peak Asymmetry ◽

Face Centered

Effects of stacking faults in a high nitrogen face-centered-cubic phase (γΝ) formed on plasma source ion nitrided 1Cr18Ni9Ti (18-8 type) austenitic stainless steel on peak shift and peak asymmetry of x-ray diffraction were investigated based on Warren’s theory and Wagner’s method, respectively. The peak shift from peak position of the γΝ phase is ascribed to the deformation faults density α, while the peak asymmetry of the γΝ phase is characterized by deviation of the center of gravity of a peak from the peak maximum (Δ C.G.) due to the twin faults density β. The calculated peak positions of x-ray diffraction patterns are consistent with that measured for plasma source ion nitrided 1Cr18Ni9Ti stainless steel.

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Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.833.127 ◽

2015 ◽

Vol 833 ◽

pp. 127-133

Author(s):

Jie Yu ◽

Jie Xing ◽

Xiu Hua Chen ◽

Wen Hui Ma ◽

Rui Li ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Radio Frequency ◽

Film Growth ◽

Rf Magnetron Sputtering ◽

X Ray Diffraction ◽

X Ray ◽

Electrolyte Film ◽

Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

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Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

MRS Proceedings ◽

10.1557/opl.2011.1306 ◽

2011 ◽

Vol 1328 ◽

Author(s):

KyoungMoo Lee ◽

Yoshio Abe ◽

Midori Kawamura ◽

Hidenobu Itoh

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Indium Tin Oxide ◽

Large Change ◽

Amorphous Structure ◽

Cobalt Hydroxide ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

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Compositional dependence of thin films of BiPbSrCaCuO on target to substrate distance

Canadian Journal of Physics ◽

10.1139/p95-005 ◽

1995 ◽

Vol 73 (1-2) ◽

pp. 35-37

Author(s):

J. Murdoch ◽

F. S. Razavi ◽

J. A. Moore

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Atomic Composition ◽

Compositional Dependence ◽

X Ray Diffraction ◽

X Ray ◽

Substrate Distance ◽

Radioisotope Source ◽

Complex Variation

Using magnetron sputtering techniques, several thin films of superconducting BiPbSrCaCuO were fabricated by varying the distance between the substrate (single crystal of MgO with polished (100) plane) and the targets. During the deposition the gas pressure was kept constant at 0.3 mbar (1 mbar = 0.1 kPa) and the substrate temperature was kept at 700 °C. An energy-dispersive X-ray fluorescence was designed using a radioisotope source with a secondary target and a Si(Li) X-ray spectrometer and it was used to measure the atomic composition of the film quantitatively. It was found that the Ca concentration relative to Sr increases linearly as the distance between the substrate and the targets increases. However, both Cu and Bi show a more complex variation of concentration with distance. The X-ray diffraction results also indicated that the films are grown epitaxially along the C axis, which showed a semiconducting behaviour with TC,zero below 60 K.

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PREFERABLE ORIENTATION OF CRYSTALLINE THIN-FILM OF MODIFIED BNN SYSTEM

Modern Physics Letters B ◽

10.1142/s021798498900073x ◽

1989 ◽

Vol 03 (06) ◽

pp. 465-470 ◽

Cited By ~ 4

Author(s):

MASAYUKI TSUKIOKA ◽

TASUKU MASHIO ◽

MASAJI SHIMAZU ◽

TAKESHI NAKAMURA

Keyword(s):

Thin Film ◽

Thin Films ◽

Stainless Steel ◽

Steel Substrate ◽

Rf Sputtering ◽

Polished Surface ◽

Diffraction Measurement ◽

X Ray Diffraction ◽

X Ray ◽

Quantitative Analyses

Using rf-sputtering method, modified BNN ( Ba 2 NaNb 5 O 15) thin-films, which are highly aligned, were prepared on a polished surface of a stainless steel plate and on a polished silicon wafer. It was found that preferably aligned thin-films were successfully obtained only when modified Nb-rich BNN target was used. Preferable orientation of these thin-films was confirmed by X-ray diffraction measurement. In order to find the correlation between preferable orientation and separation from plasma center, X-ray measurement was carried out at several points on the thin-film sputtered on a long stainless steel substrate (5×100 mm ). The result indicated that preferable orientation was dominant near the position of plasma center. In order to distinguish whether the strong X-ray peak observed in the preferably aligned BNN thin-film is due to (200) peak of Nb 2 O 5 or (440) peak of BNN, X-ray measurements and the following quantitative analyses; fluorescent X-ray, ICP (Induced Coupled Radio Frequency Plasma) and an Atomic Absorption Method, were carried out for films sputtered from Nb-rich BNN target. The results reveal that the thin-films include considerable quantity of barium and sodium. This suggests that the highly aligned thin-film is composed of modified BNN and not Nb 2 O 5.

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Photocathode Protection Properties of TiO2/V2O5 Coating

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.79-82.651 ◽

2009 ◽

Vol 79-82 ◽

pp. 651-654 ◽

Cited By ~ 1

Author(s):

Min Jie Zhou ◽

Li Zhong

Keyword(s):

Stainless Steel ◽

Steel Substrate ◽

Sol Gel ◽

304 Stainless Steel ◽

X Ray Diffraction ◽

X Ray ◽

Uv Illumination ◽

Type 304 ◽

Type 304 Stainless Steel ◽

Cathode Protection

Nano-sized TiO2/V2O5 bilayer coatings were prepared on type304 stainless steel substrate by sol-gel method and were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD). The performance of photocathode protection of the coating was investigated by the electrochemical method. SEM results indicate that the coating surface is continuous, uniform and dense, XRD spectra show that the coating is of anatase TiO2 and V2O5. The experimental results demonstrate that type 304 stainless steel with the bilayer coating can maintain cathode protection for 6h in the dark after irradiation by UV illumination for 1 h.

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X-ray diffraction study of phase composition and amorphization in magnetron-sputter-deposited thin films of stainless steel-titanium

Thin Solid Films ◽

10.1016/0040-6090(88)90254-4 ◽

1988 ◽

Vol 161 ◽

pp. 223-234 ◽

Cited By ~ 5

Author(s):

S.C. Grudeva ◽

M.J. Kanev ◽

N.S. Zotov

Keyword(s):

Thin Films ◽

Stainless Steel ◽

Phase Composition ◽

Diffraction Study ◽

X Ray Diffraction ◽

X Ray ◽

Magnetron Sputter ◽

Sputter Deposited

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Investigation on AZO Films Deposited by Radio-Frequency Reactive Magnetron Sputtering

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.320.35 ◽

2013 ◽

Vol 320 ◽

pp. 35-39

Author(s):

Cheng Long Kang ◽

Jin Xiang Deng ◽

Min Cui ◽

Chao Man ◽

Le Kong ◽

...

Keyword(s):

Thin Films ◽

Electron Microscope ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Rf Magnetron Sputtering ◽

Reactive Magnetron ◽

X Ray Diffraction ◽

X Ray ◽

Doped Zno ◽

Scanning Electron

The Al2O3-doped ZnO(AZO) films were deposited on the glasses by means of RF magnetron sputtering technology. The films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) and Profile-system respectively. The effect of substrate temperature on the structure of the AZO films is investigated.As a result, the properties of the AZO thin films are remarkably influenced by the substrate temperature , especially in the range of 200°C to 500 °C. The film prepared at the substrate temperature of 400°C possesses the best crystalline.

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Preparation of SnS thin films with gear-like sheet appearance by close-spaced vacuum thermal evaporation

International Journal of Modern Physics B ◽

10.1142/s0217979217440544 ◽

2017 ◽

Vol 31 (16-19) ◽

pp. 1744054 ◽

Cited By ~ 3

Author(s):

Zhangpeng Shao ◽

Chengwu Shi ◽

Junjun Chen ◽

Yanru Zhang

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Near Infrared ◽

Thermal Evaporation ◽

Atomic Ratio ◽

X Ray Diffraction ◽

X Ray ◽

Vacuum Thermal Evaporation ◽

Influence Of Substrate ◽

Sns Thin Films

SnS thin films with gear-like sheet appearance were successfully prepared by close-spaced vacuum thermal evaporation using SnS powders as a source. The influence of substrate temperature on the surface morphology, chemical composition, crystal structure and optical property of SnS thin films was investigated by scanning electron microscopy, energy-dispersive spectroscopy, X-ray diffraction and ultraviolet–visible–near infrared spectroscopy. The results revealed that serration architecture appeared obviously in the edge of the SnS sheet and the strongest peak at 2[Formula: see text]=31.63[Formula: see text] was broadened and many shoulder peaks were observed with increasing substrate temperature. The atomic ratio of Sn to S increased from 1:1.08 to 1:1.20, the grain size became slightly smaller and the optical absorption edge had a blueshift in the SnS thin film with decreasing substrate temperature.

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