scholarly journals Simulation and Optimization of Film Thickness Uniformity in Physical Vapor Deposition

Coatings ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 325 ◽  
Author(s):  
Ben Wang ◽  
Xiuhua Fu ◽  
Shigeng Song ◽  
Hin Chu ◽  
Desmond Gibson ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Thickness Distribution ◽  
Large Area ◽  
Thickness Uniformity ◽  
Simulation And Optimization ◽  
Material Sources ◽  
Good Agreement

Optimization of thin film uniformity is an important aspect for large-area coatings, particularly for optical coatings where error tolerances can be of the order of nanometers. Physical vapor deposition is a widely used technique for producing thin films. Applications include anti-reflection coatings, photovoltaics etc. This paper reviews the methods and simulations used for improving thin film uniformity in physical vapor deposition (both evaporation and sputtering), covering characteristic aspects of emission from material sources, projection/mask effects on film thickness distribution, as well as geometric and rotational influences from apparatus configurations. Following the review, a new program for modelling and simulating thin film uniformity for physical vapor deposition was developed using MathCAD. Results from the program were then compared with both known theoretical analytical equations of thickness distribution and experimental data, and found to be in good agreement. A mask for optimizing thin film thickness distribution designed using the program was shown to improve thickness uniformity from ±4% to ±0.56%.

Optical Characterization and Mapping of Four INCH InSb Epitaxial thin Films Grown on GaAs by Turbo Disk Metalorganic Chemical Vapor Deposition

1996 ◽  
Vol 450 ◽  
Author(s):  
Z. C. Feng ◽  
C. Beckham ◽  
P. Schumaker ◽  
I. Ferguson ◽  
R. A. Stall ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Thickness Distribution ◽  
Chemical Vapor ◽  
Crystalline Quality ◽  
Large Area ◽  
Metalorganic Chemical

ABSTRACTA large number of 4 inch (100 mm) diameter 1–2 μm thick InSb films have been grown on GaAs by low pressure metalorganic chemical vapor deposition (MOCVD) turbo disk technology. Raman scattering microscopy was used to study the effects of III-V source ratios on the film crystalline quality and to optimize the growth parameters. Multi-point Raman measurements over the entire 4” wafer were performed to exhibit the uniformity distribution of the film crystalline quality. A FTIR reflectance mapping system has been established to map the film thickness distribution. Good uniformity of the film thickness and crystalline perfection was obtained. Raman and FTIR are showing useful tools for non-destructive characterization of large area wafers for industrial mass production.

Effect of Film Thickness on Fatigue Strength of TiAl Alloy Coated with TiAlN Film at Elevated Temperature

2005 ◽  
Vol 297-300 ◽  
pp. 1446-1451 ◽  
Author(s):  
Takeshi Kasuya ◽  
Hideto Suzuki
Keyword(s):  
Thin Film ◽  
Fatigue Strength ◽  
Film Thickness ◽  
Thick Film ◽  
Physical Vapor Deposition ◽  
Tial Alloy ◽  
Testing Machine ◽  
Intermetallic Alloy ◽  
Fracture Control ◽  
The Difference

The fatigue strength of TiAl intermetallic alloy coated with TiAlN film was studied in vacuum at 1073K using a SEM-servo testing machine. In addition, three kinds of TiAlN films were given by physical vapor deposition (1, 3, and 10μ m). The fatigue strength of 3μ m was highest. Also, the fatigue strength of 1μ m was lowest. From this result, existence of optimum film thickness was suggested because the difference of fatigue strength arose in each film thickness. The justification for existence of optimum film thickness is competition of 45-degree crack and 90-degree crack. The 45-degree crack is phenomenon seen in the thin film (1μ m), and is caused by plastic deformation of TiAl substrate. The 45-degree crack is the factor of the fatigue strength fall by the side of thin film. In contrast, the 90-degree crack is phenomenon in the thick film (10μ m), and is caused as result of reaction against load to film. The 90-degree crack is the factor of the fatigue strength fall by the side of thick film. In conclusion, the optimum film thickness can perform meso fracture control, and improves fatigue strength.

scholarly journals CVD and PVD coating process modelling by using artificial neural networks

2012 ◽  
Vol 1 (1) ◽  
pp. 46 ◽  
Author(s):  
Amir Mahyar Khorasani ◽  
Mohammad Reza Solymany yazdi ◽  
Mehdi Faraji ◽  
Alex Kootsookos
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Film Coating ◽  
Deposition Process ◽  
Thin Film Coating ◽  
Mlp Neural Network ◽  
Titanium Thin Film ◽  
Pvd Coating

Thin-film coating plays a prominent role on the manufacture of many industrial devices. Coating can increase material performance due to the deposition process. Having adequate and precise model that can predict the hardness of PVD and CVD processes is so helpful for manufacturers and engineers to choose suitable parameters in order to obtain the best hardness and decreasing cost and time of industrial productions. This paper proposes the estimation of hardness of titanium thin-film layers as protective industrial tools by using multi-layer perceptron (MLP) neural network. Based on the experimental data that was obtained during the process of chemical vapor deposition (CVD) and physical vapor deposition (PVD), the modeling of the coating variables for predicting hardness of titanium thin-film layers, is performed. Then, the obtained results are experimentally verified and very accurate outcomes had been attained.

scholarly journals Aspects of thin film deposition on granulates by physical vapor deposition

2016 ◽  
Vol 70 (11) ◽  
Author(s):  
Andreas Eder ◽  
Gerwin H.S. Schmid ◽  
Harald Mahr ◽  
Christoph Eisenmenger-Sittner
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Thin Film Deposition ◽  
Film Deposition

Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region

2021 ◽  
Author(s):  
Ryo Ono ◽  
Shinya Imai ◽  
Yuta Kusama ◽  
Takuya Hamada ◽  
Masaya Hamada ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Formation Process ◽  
Physical Vapor Deposition ◽  
Film Formation ◽  
Dark Field ◽  
Film Structure ◽  
Internal Stresses ◽  
Large Area ◽  
Scanning Transmission ◽  
Annular Dark Field

Abstract Sputtering enables uniform and clean deposition over a large area, which is an issue with exfoliation and chemi-cal vapor deposition methods. On the other hand, the process of physical vapor deposition (PVD) film formationhas not yet been clarified. We prepared several samples from the sub-monolayer region, and performed Ra-man spectroscopy, X-ray photon spectroscopy and high-angle annular dark-field scanning transmission electronmicroscopy. From these results, the internal stresses inherent to PVD films, the bonding states specific to sub-monolayers, and the unique film structure and the grain formation process of PVD films were discussed fromthe perspective of sub-monolayers. As a conclusion, we found that it is important to suppress the formation ofsub-monolayers on the substrate to completely form the first layer.

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