scholarly journals Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1115
Author(s):  
Mohammad Abdul Alim ◽  
Abu Zahed Chowdhury ◽  
Shariful Islam ◽  
Christophe Gaquiere ◽  
Giovanni Crupi
Keyword(s):  
High Electron Mobility Transistors ◽  
Relative Sensitivity ◽  
Semiconductor Materials ◽  
High Electron ◽  
Thermal Impact ◽  
Scattering Parameter ◽  
Electron Mobility Transistors ◽  
Fair Comparison ◽  
Bias Point ◽  
The Impact

The goal of this paper is to provide a comparative analysis of the thermal impact on the microwave performance of high electron-mobility transistors (HEMTs) based on GaAs and GaN technologies. To accomplish this challenging goal, the relative sensitivity of the microwave performance to changes in the ambient temperature is determined by using scattering parameter measurements and the corresponding equivalent-circuit models. The studied devices are two HEMTs with the same gate width of 200 µm but fabricated using different semiconductor materials: GaAs and GaN technologies. The investigation is performed under both cooled and heated conditions, by varying the temperature from −40 °C to 150 °C. Although the impact of the temperature strongly depends on the selected operating condition, the bias point is chosen in order to enable, as much as possible, a fair comparison between the two different technologies. As will be shown, quite similar trends are observed for the two different technologies, but the impact of the temperature is more pronounced in the GaN device.

The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor

2019 ◽  
Vol 33 (18) ◽  
pp. 1950190
Author(s):  
Hai Li Wang ◽  
Peng Yang ◽  
Kun Xu ◽  
Xiang Yang Duan ◽  
Shu Xiang Sun
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Transport Model ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Conduction Band Offset ◽  
Electron Mobility Transistors ◽  
The Impact

In this paper, we investigated the impact of thickness and mole fraction AlInGaN back barrier on the DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) by numerical simulation. The simulations are performed using the hydrodynamic transport model (HD). The simulation results indicated that an inserted AlInGaN back barrier with increasing thickness and mole fraction could effectively confine the electron in the channel, resulting in a significant improvement of the channel current and transconductance. Additionally, the variation of conduction band offset and the increase of total number electron in the channel led to the threshold voltage moving toward a more negative value.

Construction of a Broad-Based Experimental and Computational Test Capability for High Power Wide Bandgap Semiconductor Devices

2007 ◽  
Author(s):  
Jason A. Carter ◽  
Matthew D. Roth ◽  
Michael W. Horgan ◽  
Lisa Shellenberger ◽  
Daniel P. Hoffmann ◽  
...  
Keyword(s):  
Thermal Stresses ◽  
High Electron Mobility Transistors ◽  
Operating Conditions ◽  
High Electron ◽  
Thermal Impedance ◽  
Analysis Model ◽  
Operational Parameters ◽  
Material Interfaces ◽  
Electron Mobility Transistors ◽  
The Impact

In this paper, the authors will discuss the development and implementation of a test stand to assess the impact of temperature on the performance of commercial X-band gallium nitride (GaN) on silicon carbide (SiC) high electron mobility transistors (HEMTs) designed for radio frequency (RF) communications platforms. The devices are tested under a range of operating temperatures and under a range of electrical operating conditions of variable gate and source-drain voltages to assess the impact of temperature on core operational parameters of the device such as channel resistance and transconductance. This test capability includes infrared thermography and transient thermal impedance measurements of the device. In addition to the experimental effort, the initial construction of a finite-volume numerical analysis model of the device will be discussed. The focus of these models will be the accurate assessment of device thermal impedance based on assumed thermal loads and eventually the assessment of accumulated thermal stresses at the material interfaces within the device and package structure.

scholarly journals Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 318 ◽  
Author(s):  
He Guan ◽  
Shaoxi Wang ◽  
Lingli Chen ◽  
Bo Gao ◽  
Ying Wang ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Electron Velocity ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Channel Thickness ◽  
The Impact ◽  
Different Thickness

Because of the high electron mobility and electron velocity in the channel, InAs/AlSb high electron mobility transistors (HEMTs) have excellent physical properties, compared with the other traditional III-V semiconductor components, such as ultra-high cut-off frequency, very low power consumption and good noise performance. In this paper, both the structure and working principle of InAs/AlSb HEMTs were studied, the energy band distribution of the InAs/AlSb heterojunction epitaxy was analyzed, and the generation mechanism and scattering mechanism of two-dimensional electron gas (2DEG) in InAs channel were demonstrated, based on the software simulation in detail. In order to discuss the impact of different epitaxial structures on the 2DEG and electron mobility in channel, four kinds of epitaxies with different thickness of InAs channel and AlSb upper-barrier were manufactured. The samples were evaluated with the contact Hall test. It is found the sample with a channel thickness of 15 nm and upper-barrier layer of 17 nm shows a best compromised sheet carrier concentration of 2.56 × 1012 cm−2 and electron mobility of 1.81 × 104 cm2/V·s, and a low sheet resistivity of 135 Ω/□, which we considered to be the optimized thickness of channel layer and upper-barrier layer. This study is a reference to further design InAs/AlSb HEMT, by ensuring a good device performance.

scholarly journals The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Sven Besendörfer ◽  
Elke Meissner ◽  
Farid Medjdoub ◽  
Joff Derluyn ◽  
Jochen Friedrich ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Conductive Atomic Force Microscopy ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

Abstract GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and Defect Selective Etching that even for materials with similar total dislocation densities substantially different subsets of dislocations with screw component act as current leakage paths within the AlGaN barrier under forward bias. Potential reasons are discussed and it will be directly shown by an innovative experiment that current voltage forward characteristics of AlGaN/GaN Schottky diodes shift to lower absolute voltages when such dislocations are present within the device. A local lowering of the Schottky barrier height around conductive dislocations is identified and impurity segregation is assumed as responsible root cause. While dislocation related leakage current under low reverse bias could not be resolved, breakdown of AlGaN/GaN Schottky diodes under high reverse bias correlates well with observed conductive dislocations as measured by C-AFM. If such dislocations are located near the drain side of the gate edge, failure of the gate in terms of breakdown or formation of percolation paths is observed for AlGaN/GaN high electron mobility transistors.

scholarly journals Effect of the High-Temperature Off-State Stresses on the Degradation of AlGaN/GaN HEMTs

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1339
Author(s):  
Jinfu Lin ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Chang Liu ◽  
Mengyu Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Simultaneous Action ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Significant Difference ◽  
The Impact

GaN-based high electron mobility transistors offer high carrier density combined with high electron mobility and often require operation at high frequencies, voltages, and temperatures. The device may be under high temperature and high voltage at the same time in actual operation. In this work, the impact of separate off-state stresses, separate high-temperature stresses, and off-state stresses at high temperatures on AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was investigated. The output current and gate leakage of the device degenerated to different degrees under either isolated off-state or high-temperature stress. The threshold voltage of the device only exhibited obvious negative drift under the action of high-temperature and off-state stresses. The parameter at high temperature (or room temperature) before stress application was the reference. We found that there was no significant difference in the degradation rate of drain current and transconductance peak when the same off-state stress was applied to the device at different temperatures. It was concluded that, under the high-temperature off-state electric field pressure, there were two degradation mechanisms: one was the inverse piezoelectric polarization mechanism only related to the electric field, and the other was the degradation mechanism of the simultaneous action of temperature and electric field.

The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

2013 ◽  
Vol 114 (16) ◽  
pp. 164501 ◽  
Author(s):  
Sukwon Choi ◽  
Eric Heller ◽  
Donald Dorsey ◽  
Ramakrishna Vetury ◽  
Samuel Graham
Keyword(s):  
Mechanical Stress ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

scholarly journals Effect of the Heat Dissipation System on Hard-Switching GaN-Based Power Converters for Energy Conversion

Energies ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 6287
Author(s):  
David Lumbreras ◽  
Manel Vilella ◽  
Jordi Zaragoza ◽  
Néstor Berbel ◽  
Josep Jordà ◽  
...  
Keyword(s):  
High Power ◽  
Heat Dissipation ◽  
Power Converters ◽  
Cooling System ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Power Capability ◽  
The Impact ◽  
Dissipation System

The design of a cooling system is critical in power converters based on wide-bandgap (WBG) semiconductors. The use of gallium nitride enhancement-mode high-electron-mobility transistors (GaN e-HEMTs) is particularly challenging due to their small size and high power capability. In this paper, we model, study and compare the different heat dissipation systems proposed for high power density GaN-based power converters. Two dissipation systems are analysed in detail: bottom-side dissipation using thermal vias and top-side dissipation using different thermal interface materials. The effectiveness of both dissipation techniques is analysed using MATLAB/Simulink and PLECS. Furthermore, the impact of the dissipation system on the parasitic elements of the converter is studied using advanced design systems (ADS). The experimental results of the GaN-based converters show the effectiveness of the analysed heat dissipation systems and how top-side cooled converters have the lowest parasitic inductance among the studied power converters.

scholarly journals The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 570
Author(s):  
H.Y. Wang ◽  
H.C. Chiu ◽  
W.C. Hsu ◽  
C.M. Liu ◽  
C.Y. Chuang ◽  
...  
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Heat Dissipation ◽  
Surface Defects ◽  
Lattice Mismatch ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back barriers (B.B.) were comprehensively investigated based on the different Al mole fractions and thicknesses in the design of the experiments. It was shown that the off-state leakage current can be suppressed following an increase of the Al mole fraction due to the enhancement of the back barrier height. Increasing the AlGaN thickness deteriorated device performance because of the generation of lattice mismatch induced surface defects. The dynamic on-resistance (RON) measurements indicated that the Al mole fraction and thickness of the B.B. both affected the buffer trapping phenomenon. In addition, the thickness of B.B. also influenced the substrate heat dissipation ability which is also a key index for high power RF device applications.

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