scholarly journals Sub-THz and THz SiGe HBT Electrical Compact Modeling

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1397
Author(s):  
Bishwadeep Saha ◽  
Sebastien Fregonese ◽  
Anjan Chakravorty ◽  
Soumya Ranjan Panda ◽  
Thomas Zimmer
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
High Frequency ◽  
State Of The Art ◽  
Sensitivity Study ◽  
Compact Modeling ◽  
Process Technology ◽  
Very High Frequency ◽  
Sige Hbt ◽  
Frequency Behavior

From the perspectives of characterized data, calibrated TCAD simulations and compact modeling, we present a deeper investigation of the very high frequency behavior of state-of-the-art sub-THz silicon germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55-nm BiCMOS process technology from STMicroelectronics. The TCAD simulation platform is appropriately calibrated with the measurements in order to aid the extraction of a few selected high-frequency (HF) parameters of the state-of-the-art compact model HICUM, which are otherwise difficult to extract from traditionally prepared test-structures. Physics-based strategies of extracting the HF parameters are elaborately presented followed by a sensitivity study to see the effects of the variations of HF parameters on certain frequency-dependent characteristics until 500 GHz. Finally, the deployed HICUM model is evaluated against the measured s-parameters of the investigated SiGe HBT until 500 GHz.

INTEGRATED SiGe AND Si DEVICE CAPABILITIES AND TRENDS FOR MULTI-GIGAHERTZ APPLICATIONS

2003 ◽  
Vol 13 (01) ◽  
pp. 175-219 ◽  
Author(s):  
G. G. FREEMAN ◽  
B. JAGANNATHAN ◽  
N. ZAMDMER ◽  
R. GROVES ◽  
R. SINGH ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
High Frequency ◽  
High Speed ◽  
Very High Frequency ◽  
Silicon Photodiode ◽  
Sige Hbt ◽  
Wide Range ◽  
On Chip ◽  
Silicon Based ◽  
Very High

Silicon-based devices, including the increasingly available SiGe-based devices, are now demonstrating fT and fMAX values over 200 GHz. These recent advances open the door to a wide range of silicon-based very high frequency, low power and highly integrated solutions. Trends in silicon MOS, SiGe HBT, SiGe MODFET and SiGe strained silicon FETs are reported. Silicon inroads to device functions viewed as the sole realm of III-V technologies are also being demonstrated. Capability and trends of the integrated silicon photodiode are reported here as an example. Integration of these high-speed devices into a complex circuit requires on-chip passive device functionality at such high frequency. Key devices to enable integration are the inductor, varactor, and transmission line, and operation of these devices at high frequency is reported. Further, we discuss noise isolation issues and techniques, which may be used when minimizing cross-talk within a conductive silicon substrate.

scholarly journals High-resolution signal-in-space measurements of VHF omnidirectional ranges using UAS

2019 ◽  
Vol 17 ◽  
pp. 1-10 ◽  
Author(s):  
Thorsten Schrader ◽  
Jochen Bredemeyer ◽  
Marius Mihalachi ◽  
David Ulm ◽  
Thomas Kleine-Ostmann ◽  
...  
Keyword(s):  
High Frequency ◽  
State Of The Art ◽  
Signal Integrity ◽  
Very High Frequency ◽  
Time Resolved ◽  
Precise Position ◽  
Rf Measurement ◽  
Measurement Results ◽  
True Signal ◽  
Very High

Abstract. In this paper, we describe measurement results of the signal-in-space of very high frequency (VHF) omnidirectional range (VOR) facilities. In aviation VOR are used to display the current course of the aircraft in the cockpit. To understand the influence of wind turbines (WT) on the signal integrity of terrestrial navigation and radar signals, the signal content and its changes, respectively, must be investigated. So far, only numerical simulations have been carried out on the frequency-modulation (FM) part of the Doppler-VOR (DVOR) signal to estimate the influence of WT on DVOR. Up to now, the amplitude-modulated (AM) part of the DVOR was not assessed at all. In 2016, we presented an unmanned aerial system (UAS) as a carrier for state-of-the-art radio-frequency (RF) measurement instrumentation (Schrader et al., 2016a, c; Bredemeyer et al., 2016), to measure and to record the true signal-in-space (both FM and AM signal) during the flight. The signal-in-space (which refers to time-resolved signal content and field strength, respectively) is measured and sampled without loss of information and, furthermore, synchronously stored with time stamp and with precise position in space, where the measurements were taken.

scholarly journals Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 772
Author(s):  
Md Sarker ◽  
Ickhyun Song
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
Noise Figure ◽  
High Gain ◽  
Center Frequency ◽  
Sige Hbt ◽  
Multi Stage ◽  
Amplifier Design ◽  
Small Form Factor ◽  
Silicon Vias

For performance-driven systems such as space-based applications, it is important to maximize the gain of radio-frequency amplifiers (RFAs) with a certain tolerance against radiation, temperature effects, and small form factor. In this work, we present a K-band, compact high-gain RFA using an fT-doubler topology in a silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) technology platform. The through-silicon vias (TSVs), typically used for small-size chip packaging purposes, have been effectively utilized as an adjustable matching element for input impedance, reducing the overall area of the chip. The proposed RFA, fabricated in a modest 0.35 µm SiGe technology, achieves a gain of 14.1 dB at 20 GHz center frequency, and a noise figure (NF) of 11.2 dB at the same frequency, with a power consumption of 3.3 mW. The proposed design methodology can be used for achieving high gain, avoiding a complex multi-stage amplifier design approach.

TOTAL-DOSE AND SINGLE-EVENT EFFECTS IN SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS

2004 ◽  
Vol 14 (02) ◽  
pp. 489-501
Author(s):  
JOHN D. CRESSLER
Keyword(s):  
Ionizing Radiation ◽  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
Radiation Effects ◽  
Bipolar Transistors ◽  
Electronic Systems ◽  
Single Event ◽  
Sige Hbt ◽  
Radiation Induced ◽  
The Impact

We present an overview of radiation effects in silicon-germanium heterojunction bipolar transistors ( SiGe HBT). We begin by reviewing SiGe HBTs, and then examine the impact of ionizing radiation on both the dc and ac performance of SiGe HBTs, the circuit-level impact of radiation-induced changes in the transistors, followed by single-event phenomena in SiGe HBT circuits. While ionizing radiation degrades both the dc and ac properties of SiGe HBTs, this degradation is remarkably minor, and is far better than that observed in even radiation-hardened conventional Si BJT technologies. This fact is particularly significant given that no intentional radiation hardening is needed to ensure this level of both device-level and circuit-level tolerance (typically multi-Mrad TID). SEU effects are pronounced in SiGe HBT circuits, as expected, but circuit-level mitigation schemes will likely be suitable to ensure adequate tolerance for many orbital missions. SiGe HBT technology thus offers many interesting possibilities for space-borne electronic systems.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

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