scholarly journals Nanomechanical and Material Properties of Fluorine-Doped Tin Oxide Thin Films Prepared by Ultrasonic Spray Pyrolysis: Effects of F-Doping

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1665 ◽  
Author(s):  
Le Thi Cam Tuyen ◽  
Sheng-Rui Jian ◽  
Nguyen Thanh Tien ◽  
Phuoc Huu Le

Fluorine-doped tin oxide (FTO) thin films were deposited on glass substrates using ultrasonic spray pyrolysis (USP) at a fixed substrate temperature of 400 °C and various Fluorine/Tin (F/Sn) atomic ratios of 0, 0.1, 0.5, and 1.0. Effects of F/Sn atomic ratios on structural-morphological, compositional, electrical, optical, and nanomechanical properties of the FTO thin films were systematically studied. The FTO films exhibited a tetragonal structure with preferred orientations of (110), (200), and (211), and polycrystalline morphology with spear-like or coconut shell-like particles on the surfaces. The presence of F-doping was confirmed by XPS results with clear F1s peaks, and F-concentration was determined to be 0.7% for F/Sn = 0.1 and 5.1% for F/Sn = 0.5. Moreover, the resistivity of FTO films reduced remarkably from 4.1 mΩcm at F/Sn = 0 to 0.7 mΩcm at F/Sn = 1, primarily due to the corresponding increase of carrier concentration from 2 × 1020 cm−3 to 1.2 × 1021 cm−3. The average optical transmittance of the films prepared at F/Sn of 0–0.5 was over 90%, and it decreased to 84.4% for the film prepared at F/Sn = 1. The hardness (H) and Young’s modulus (E) of the FTO films increased when the F/Sn ratios increased from 0 to 0.5, reaching maximum values of H = 12.3 ± 0.4 GPa, E = 131.7 ± 8.0 GPa at F/Sn = 0.5. Meanwhile, the H and E reduced considerably when the F/Sn ratio further increased to 1.0, following the inverse Hall-Petch effect approximately, suggesting that the grain boundary effect played a primary role in manipulating the nanomechanical properties of the FTO films. Furthermore, favorable mechanical properties with large H/Ef and H 3 / E f 2 ratios were found for the FTO film prepared at F/Sn = 0.5, which possessed high crystallinity, large grain size, and compact morphology.

2010 ◽  
Vol 644 ◽  
pp. 105-108 ◽  
Author(s):  
M.A. García-Lobato ◽  
A. Hernández-V ◽  
H.M. Hdz-García ◽  
Arturo I. Martinez ◽  
M.I. Pech-Canul

Fe2O3 thin films were obtained on glass substrates by the ultrasonic spray pyrolysis technique; additionally, a thermodynamic analysis on the Fe2O3 formation from different precursor salts was performed. In this work, the influence of the deposition temperature is related with the structural, optical, and morphological properties of the iron oxide films. The present results reveal that amorphous thin films are obtained at temperatures lower than 350° C, while polycrystalline films with the maghemite structure are formed at higher temperatures.


2011 ◽  
Vol 299-300 ◽  
pp. 436-439 ◽  
Author(s):  
Jia Hua Min ◽  
Xiao Yan Liang ◽  
Bin Wang ◽  
Yue Zhao ◽  
Yun Guo ◽  
...  

In this paper, the structure, electrical and optical properties and stabilities of Ag doped p-type ZnO thin films, prepared by electrostatic-enhanced ultrasonic spray pyrolysis were investigated. XRD and Hall data analyses indicated that the resistivity of 4at. % Ag doped p-type ZnO was low, without Ag2O phase separation. The optical transmission spectra illustrated that optical band gaps decreases with the gradual increase of Ag dopant. Moreover, ZnO: Ag films placed for 10 days still showed p-type, but the optical transmittance decreased, suggesting that AgZn in the ZnO: Ag thin films captured electrons to generate Agi, which reunited to be Ag nano-particles and decreased the optical transmittance of ZnO: Ag.


2019 ◽  
Vol 36 (1) ◽  
pp. 76-93
Author(s):  
Rui Liu ◽  
Anping Ren ◽  
Zhen Yang ◽  
Song Tian ◽  
Yanqiu Tong ◽  
...  

We used low-cost ultrasonic spray pyrolysis to prepare fluorine-doped tin oxide film from 470 to 590°C in 30°C increments with air and nitrogen as carrier gas. The film had 86.4% optical transparency and 16.8 Ω/□ electrical resistivity. The quality factor was defined as average optical transmittance to the 10th power divided by square resistance. The quality factor for one film fabricated at 590°C was 139 × 10−4/Ω, which is acceptable for many commercial applications. Detailed analysis indicates that the optical and electrical properties are greatly influenced by the film microstructure which is a function of temperature.


2008 ◽  
Vol 34 (4) ◽  
pp. 1051-1054 ◽  
Author(s):  
D. Jadsadapattarakul ◽  
C. Euvananont ◽  
C. Thanachayanont ◽  
J. Nukeaw ◽  
T. Sooknoi

Molecules ◽  
2019 ◽  
Vol 24 (15) ◽  
pp. 2797 ◽  
Author(s):  
Deyu ◽  
Muñoz-Rojas ◽  
Rapenne ◽  
Deschanvres ◽  
Klein ◽  
...  

Aluminum-doped tin oxide (SnO 2:Al) thin films were produced by an ultrasonic spray pyrolysis method. The effect of aluminum doping on structural, optical, and electrical properties of tin oxide thin films synthesized at 420 ∘C was investigated. Al doping induced a change in the morphology of tin oxide films and yielded films with smaller grain size. SnO 2 thin films undergo a structural reordering and have a texture transition from (301) to (101), and then to (002) preferred cristallographic orientation upon Al doping. The lattice parameters (a and c) decreases with Al doping, following in a first approximation Vegard’s law. The optical transmission does not change in the visible region with an average transmittance value of 72–81%. Conversely, in the near infrared (NIR) region, the plasmon frequency shifts towards the IR region upon increasing Al concentration in the grown films. Nominally undoped SnO 2 have a conductivity of ∼1120 S/cm, which is at least two orders of magnitude larger than what is reported in literature. This higher conductivity is attributed to the Cl- ions in the SnCl 4.5(H 2 O) precursor, which would act as donor dopants. The introduction of Al into the SnO 2 lattice showed a decrease of the electrical conductivity of SnO 2 due to compensating hole generation. These findings will be useful for further studied tackling the tailoring of the properties of highly demanded fluorine doped tin oxide (FTO) films.


Sign in / Sign up

Export Citation Format

Share Document