scholarly journals Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4400
Author(s):  
Cristiano Calabretta ◽  
Viviana Scuderi ◽  
Ruggero Anzalone ◽  
Marco Mauceri ◽  
Danilo Crippa ◽  
...  
Keyword(s):  
Dopant Concentration ◽  
Average Length ◽  
Length Distribution ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Free Standing ◽  
Aluminum Doping ◽  
Heteroepitaxial Layers ◽  
Koh Etching

This work provides a comprehensive investigation of nitrogen and aluminum doping and its consequences for the physical properties of 3C-SiC. Free-standing 3C-SiC heteroepitaxial layers, intentionally doped with nitrogen or aluminum, were grown on Si (100) substrate with different 4° off-axis in a horizontal hot-wall chemical vapor deposition (CVD) reactor. The Si substrate was melted inside the CVD chamber, followed by the growth process. Micro-Raman, photoluminescence (PL) and stacking fault evaluation through molten KOH etching were performed on different doped samples. Then, the role of the doping and of the cut angle on the quality, density and length distribution of the stacking faults was studied, in order to estimate the influence of N and Al incorporation on the morphological and optical properties of the material. In particular, for both types of doping, it was observed that as the dopant concentration increased, the average length of the stacking faults (SFs) increased and their density decreased.

scholarly journals A reactive molecular dynamics study on the mechanical properties of a recently synthesized amorphous carbon monolayer converted into a nanotube/nanoscroll

2021 ◽  
Author(s):  
Marcelo Lopes Pereira Junior ◽  
Wiliam Ferreira da Cunha ◽  
Douglas Soares Galvão ◽  
Luiz Antonio Ribeiro Junior
Keyword(s):  
Mechanical Properties ◽  
Molecular Dynamics ◽  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Free Standing ◽  
Reactive Molecular Dynamics

Recently, laser-assisted chemical vapor deposition has been used to synthesize a free-standing, continuous, and stable monolayer amorphous carbon (MAC).

Study of the Role of Small Additions of Zr in the CVD- FBR Aluminization Process

2009 ◽  
Vol 289-292 ◽  
pp. 293-300
Author(s):  
L. Sánchez ◽  
F.J. Bolívar ◽  
M.P. Hierro ◽  
F.J. Pérez
Keyword(s):  
Fluidized Bed ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fluidized Bed Reactor ◽  
Iron Aluminide ◽  
Martensitic Steels ◽  
Aluminide Coatings ◽  
Deposition Parameters ◽  
Zirconium Powder

In this work, iron aluminide coatings were developed by Chemical Vapor Deposition in Fluidized Bed Reactor (CVD-FBR) on ferritic-martensitic steels. Small additions of zirconium powder were introduced in the fluidized bed; as a consequence, the obtained coatings are thicker than that without zirconium additions. When Zr powders are added in the fluidized bed, the deposition atmosphere drastically changes, leading to increase the deposition rate. Thermodynamic calculations were carried out to simulate the modifications in the CVD atmosphere in the Al/Zr deposition system in comparison to the single aluminization. In order to optimize the conditions of the deposition, parameters such as temperature and concentration of zirconium introduced into the bed were evaluated and compared with the results obtained for the single aluminum deposition.

scholarly journals Effect of dopant concentration and the role of ZnS shell on optical properties of Sm3+ doped CdS quantum dots

RSC Advances ◽  
2021 ◽  
Vol 11 (14) ◽  
pp. 7961-7971
Author(s):  
N. D. Vinh ◽  
P. M. Tan ◽  
P. V. Do ◽  
S. Bharti ◽  
V. X. Hoa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Dopant Concentration ◽  
Core Shell ◽  
Cds Quantum Dots ◽  
Cds Qds

The role of samarium (Sm) dopant on the structural, morphological, and optical properties of CdS QDs and CdS/ZnS core/shell QDs was methodically reported.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

Grain-Size-Dependent Thermal Transport Properties in Nanocrystalline Yttria-Stabilized Zirconia

2001 ◽  
Vol 703 ◽  
Author(s):  
Ho-Soon Yang ◽  
J.A. Eastman ◽  
L.J. Thompson ◽  
G.-R. Bai
Keyword(s):  
Grain Boundaries ◽  
Thermal Transport ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Stabilized Zirconia ◽  
Size Dependent ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTUnderstanding the role of grain boundaries in controlling heat flow is critical to the success of many envisioned applications of nanocrystalline materials. This study focuses on the effect of grain boundaries on thermal transport behavior in nanocrystalline yttria-stabilized zirconia (YSZ) coatings prepared by metal-organic chemical vapor deposition.

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

scholarly journals Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

2014 ◽  
Vol 116 (12) ◽  
pp. 123708 ◽  
Author(s):  
Tymoteusz Ciuk ◽  
Semih Cakmakyapan ◽  
Ekmel Ozbay ◽  
Piotr Caban ◽  
Kacper Grodecki ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Induced Resistance ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Step Edge ◽  
Free Standing ◽  
Chemical Vapor Deposition Graphene
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