scholarly journals Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Micro ◽  
2021 ◽  
Vol 1 (2) ◽  
pp. 228-241
Author(s):  
Benjamin Richstein ◽  
Lena Hellmich ◽  
Joachim Knoch

Problems with doping in nanoscale devices or low temperature applications are widely known. Our approach to replace the degenerate doping in source/drain (S/D)-contacts is silicon nitride interface engineering. We measured Schottky diodes and MOSFETs with very thin silicon nitride layers in between silicon and metal. Al/SiN/p-Si diodes show Fermi level depinning with increasing SiN thickness. The diode fabricated with rapid thermal nitridation at 900 ∘C reaches the theoretical value of the Schottky barrier to the conduction band ΦSB,n=0.2 eV. As a result, the contact resistivity decreases and the ambipolar behavior can be suppressed. Schottky barrier MOSFETs with depinned S/D-contacts consisting of a thin silicon nitride layer and contact metals with different work functions are fabricated to demonstrate unipolar behavior. We presented n-type behavior with Al and p-type behavior with Co on samples which only distinguish by the contact metal. Thus, the thermally grown SiN layers are a useful method suppress Fermi level pinning and enable reconfigurable contacts by choosing an appropriate metal.

1994 ◽  
Vol 340 ◽  
Author(s):  
V.A. Gorbyley ◽  
A.A. Chelniy ◽  
A.A. Chekalin ◽  
A.Y. Polyakov ◽  
S.J. Pearon ◽  
...  

ABSTRACTIt is shown that in Au/InGaP and Au/InGaAlP Schottky diodes the Fermi level is pinned by metal-deposition-induced midgap states. Hydrogen plasma treatment of such diodes greatly improves the reverse currents. The measured Schottky barrier heights seem to correlate with the valence band offsets measured by DLTS on quantum well structures.


2003 ◽  
Vol 94 (3) ◽  
pp. 1819-1822 ◽  
Author(s):  
Yow-Jon Lin ◽  
Quantum Ker ◽  
Ching-Yao Ho ◽  
Hsing-Cheng Chang ◽  
Feng-Tso Chien

2019 ◽  
Vol 9 (23) ◽  
pp. 5014
Author(s):  
Courtin ◽  
Moréac ◽  
Delhaye ◽  
Lépine ◽  
Tricot ◽  
...  

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.


1999 ◽  
Vol 86 (12) ◽  
pp. 6890-6894 ◽  
Author(s):  
M. Mamor ◽  
O. Nur ◽  
M. Karlsteen ◽  
M. Willander ◽  
F. D. Auret

1992 ◽  
Vol 281 ◽  
Author(s):  
A. D. Marwick ◽  
M. O. Aboelfotoh ◽  
R. Casparis

ABSTRACTIt is shown that the presence of 8 × 1015 hydrogen atoms/cm2 in the CoSi2/Si (100) interface causes an increase in the Schottky barrier height of 120 meV, and that passivation of dopants in the substrate is not the cause of this change. The data is evidence that the position of the Fermi level in this interface is controlled by defect-related interface states. After hydrogenation the Schottky barrier height agrees with that predicted by theory for Fermi level pinning by virtual gap states of the silicon.


1995 ◽  
Vol 353 (5-8) ◽  
pp. 734-739 ◽  
Author(s):  
A. Markwitz ◽  
H. Baumann ◽  
W. Grill ◽  
B. Heinz ◽  
A. R�seler ◽  
...  

1994 ◽  
Vol 64 (20) ◽  
pp. 2652-2654 ◽  
Author(s):  
A. Markwitz ◽  
H. Baumann ◽  
E. F. Krimmel ◽  
K. Bethge ◽  
W. Grill

2002 ◽  
Vol 61-62 ◽  
pp. 643-649 ◽  
Author(s):  
M. Derivaz ◽  
P. Noé ◽  
D. Jalabert ◽  
J.L. Rouviére ◽  
D. Buttard ◽  
...  

2010 ◽  
Vol 96 (5) ◽  
pp. 052514 ◽  
Author(s):  
Donkoun Lee ◽  
Shyam Raghunathan ◽  
Robert J. Wilson ◽  
Dmitri E. Nikonov ◽  
Krishna Saraswat ◽  
...  

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