scholarly journals Temperature and Pressure Wireless Ceramic Sensor (Distance = 0.5 Meter) for Extreme Environment Applications

Sensors ◽  
2021 ◽  
Vol 21 (19) ◽  
pp. 6648
Author(s):  
Justin Daniel ◽  
Spencer Nguyen ◽  
Md Atiqur Rahman Chowdhury ◽  
Shaofan Xu ◽  
Chengying Xu
Keyword(s):  
Pressure Sensor ◽  
Patch Antenna ◽  
Wireless Sensors ◽  
Carbon Nitride ◽  
Extreme Environment ◽  
Ceramic Substrate ◽  
Absolute Difference ◽  
Silicon Carbon ◽  
Temperature And Pressure ◽  
Silicon Carbon Nitride

This paper presents a design for temperature and pressure wireless sensors made of polymer-derived ceramics for extreme environment applications. The wireless sensors were designed and fabricated with conductive carbon paste on an 18.24 mm diameter with 2.4 mm thickness polymer-derived ceramic silicon carbon nitride (PDC-SiCN) disk substrate for the temperature sensor and an 18 × 18 × 2.6 mm silicon carbide ceramic substrate for the pressure sensor. In the experiment, a horn antenna interrogated the patch antenna sensor on a standard muffle furnace and a Shimadzu AGS-J universal test machine (UTM) at a wireless sensing distance of 0.5 m. The monotonic relationship between the dielectric constant of the ceramic substrate and ambient temperature is the fundamental principle for wireless temperature sensing. The temperature measurement has been demonstrated from 600 °C to 900 °C. The result closely matches the thermocouple measurement with a mean absolute difference of 2.63 °C. For the pressure sensor, the patch antenna was designed to resonate at 4.7 GHz at the no-loading case. The sensing mechanism is based on the piezo-dielectric property of the silicon carbon nitride. The developed temperature/pressure sensing system provides a feasible solution for wireless measurement for extreme environment applications.

Hard plasma chemical coatings based on silicon carbon nitride

2007 ◽  
Vol 46 (11-12) ◽  
pp. 543-549 ◽  
Author(s):  
L. A. Ivashchenko ◽  
V. I. Ivashchenko ◽  
O. K. Porada ◽  
S. M. Dub ◽  
P. L. Skrinskii ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Plasma Chemical ◽  
Silicon Carbon ◽  
Silicon Carbon Nitride

PECVD synthesis, optical and mechanical properties of silicon carbon nitride films

2015 ◽  
Vol 339 ◽  
pp. 102-108 ◽  
Author(s):  
Evgeniya Ermakova ◽  
Yurii Rumyantsev ◽  
Artur Shugurov ◽  
Alexey Panin ◽  
Marina Kosinova
Keyword(s):  
Mechanical Properties ◽  
Carbon Nitride ◽  
Silicon Carbon ◽  
Optical And Mechanical Properties ◽  
Silicon Carbon Nitride

Silicon Carbon Nitride Thin Films Produced by Magnetron Reactive Sputtering Physical Vapour Deposition: Structural, Chemical and Mechanical Characterisation

2017 ◽  
Vol 33 (1-2) ◽  
pp. 44
Author(s):  
P. Kouakou ◽  
P. Yoboue ◽  
B. Ouattara ◽  
V. Hody ◽  
P. Choquet ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Vapour Deposition ◽  
Reactive Sputtering ◽  
Mechanical Characterisation ◽  
Silicon Carbon ◽  
Film Adhesion ◽  
Experimental Parameters ◽  
Nitrogen Percentage ◽  
Silicon Carbon Nitride

Amorphous silicon carbon nitride films were deposited on silicon and WC-Co substrates by magnetron reactive sputtering in Ar/N<sub>2</sub> gas mixture with carbon and silicon targets. The influence of experimental parameters on the films morphological, structural and mechanical properties was studied. The general morphology of the film is observed by SEM and TEM. EDXS and FTIR were used to determine the film chemical composition and the nature of chemical bonding. It was observed that C≡N bonds and nitrogen percentage in the film are promoted when the substrate is biased. The role of an underlayer and the influence of its nature on the film adhesion on WC/Co substrates were also studied. In this case, nanoscratch tests showed that a SiNx thin film could be an appropriate underlayer.

Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride

1999 ◽  
Vol 592 ◽  
Author(s):  
L. C. Chen ◽  
C. T. Wu ◽  
C.-Y Wen ◽  
J.-J. Wu ◽  
W. T. Liu ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Interface Roughness ◽  
Electrical Characteristics ◽  
Ion Beam Sputtering ◽  
Electrical Measurements ◽  
Sputtering Deposition ◽  
Silicon Carbon ◽  
Beam Sputtering ◽  
Silicon Carbon Nitride

ABSTRACTDielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented.

Deposition of silicon carbon nitride films by ion beam sputtering

1999 ◽  
Vol 355-356 ◽  
pp. 417-422 ◽  
Author(s):  
J.-J Wu ◽  
C.-T Wu ◽  
Y.-C Liao ◽  
T.-R Lu ◽  
L.C Chen ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Silicon Carbon ◽  
Beam Sputtering ◽  
Silicon Carbon Nitride

Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1361-1366 ◽  
Author(s):  
I. Ferreira ◽  
E. Fortunato ◽  
P. Vilarinho ◽  
A.S. Viana ◽  
A.R. Ramos ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Hydrogenated Silicon ◽  
Silicon Carbon ◽  
Silicon Carbon Nitride
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