scholarly journals Graphene oxide films for advanced ultra-flat optical devices and photonic integrated circuits

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Optical Properties ◽  
Graphene Oxide ◽  
Integrated Circuits ◽  
Large Scale ◽  
Photonic Devices ◽  
Significant Development ◽  
Future Improvement ◽  
On Chip ◽  
High Flexibility ◽  
Made In

With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of two-dimensional (2D) materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences. This paper reviews the recent advances in this emerging field, providing an overview of the optical properties of GO as well as methods for the on-chip integration of GO. The main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.

scholarly journals Graphene oxide films for advanced ultra-flat optical devices and photonic integrated circuits

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Optical Properties ◽  
Graphene Oxide ◽  
Integrated Circuits ◽  
Large Scale ◽  
Photonic Devices ◽  
Significant Development ◽  
Future Improvement ◽  
On Chip ◽  
High Flexibility ◽  
Made In

With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of two-dimensional (2D) materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences. This paper reviews the recent advances in this emerging field, providing an overview of the optical properties of GO as well as methods for the on-chip integration of GO. The main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.

scholarly journals Graphene oxide films for applications to ultra-flat optics and linear and nonlinear integrated photonic chips

2021 ◽  
Author(s):  
David Moss
Keyword(s):  
Optical Properties ◽  
Graphene Oxide ◽  
Large Scale ◽  
Photonic Devices ◽  
Significant Development ◽  
The Past ◽  
Future Improvement ◽  
On Chip ◽  
High Flexibility ◽  
Made In

With superior optical properties, high flexibility in engineering its material properties, andstrong capability for large-scale on-chip integration, graphene oxide (GO) is an attractivesolution for on-chip integration of two-dimensional (2D) materials to implement functionalintegrated photonic devices capable of new features. Over the past decade, integrated GOphotonics, representing an innovative merging of integrated photonic devices and thin GOfilms, has experienced significant development, leading to a surge in many applicationscovering almost every field of optical sciences. This paper reviews the recent advances in thisemerging field, providing an overview of the optical properties of GO as well as methods forthe on-chip integration of GO. The main achievements made in GO hybrid integratedphotonic devices for diverse applications are summarized. The open challenges as well as thepotential for future improvement are also discussed.

scholarly journals On-Chip Integrated Photonic Devices Based on Phase Change Materials

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 205
Author(s):  
Muhammad Shemyal Nisar ◽  
Xing Yang ◽  
Liangjun Lu ◽  
Jianping Chen ◽  
Linjie Zhou
Keyword(s):  
Optical Properties ◽  
Phase Change ◽  
Phase Change Materials ◽  
Photonic Devices ◽  
Memory Devices ◽  
Electrical And Optical Properties ◽  
Unique Type ◽  
Fast Pace ◽  
On Chip ◽  
Made In

Phase change materials present a unique type of materials that drastically change their electrical and optical properties on the introduction of an external electrical or optical stimulus. Although these materials have been around for some decades, they have only recently been implemented for on-chip photonic applications. Since their reinvigoration a few years ago, on-chip devices based on phase change materials have been making a lot of progress, impacting many diverse applications at a very fast pace. At present, they are found in many interesting applications including switches and modulation; however, phase change materials are deemed most essential for next-generation low-power memory devices and neuromorphic computational platforms. This review seeks to highlight the progress thus far made in on-chip devices derived from phase change materials including memory devices, neuromorphic computing, switches, and modulators.

scholarly journals Organic printed photonics: From microring lasers to integrated circuits

2015 ◽  
Vol 1 (8) ◽  
pp. e1500257 ◽  
Author(s):  
Chuang Zhang ◽  
Chang-Ling Zou ◽  
Yan Zhao ◽  
Chun-Hua Dong ◽  
Cong Wei ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Flexible Electronics ◽  
Integrated Circuit ◽  
Large Scale ◽  
Rapid Development ◽  
Light Signal ◽  
Photonic Integrated Circuit ◽  
Printing Technique ◽  
On Chip ◽  
Silicon Based

A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.

Two- and Three-Dimensional Photonic Crystals Built with VLSI Tools

MRS Bulletin ◽  
2001 ◽  
Vol 26 (8) ◽  
pp. 627-631 ◽  
Author(s):  
Shawn-Yu Lin ◽  
J.G. Fleming ◽  
E. Chow
Keyword(s):  
Photonic Crystal ◽  
Photonic Crystals ◽  
Integrated Circuit ◽  
Three Dimensional ◽  
Photonic Devices ◽  
Processing Technology ◽  
Photonic Crystal Slabs ◽  
The Creation ◽  
On Chip ◽  
Made In

The drive toward miniature photonic devices has been hindered by our inability to tightly control and manipulate light. Moreover, photonics technologies are typically not based on silicon and, until recently, only indirectly benefited from the rapid advances being made in silicon processing technology. In the first part of this article, the successful fabrication of three-dimensional (3D) photonic crystals using silicon processing will be discussed. This advance has been made possible through the use of integrated-circuit (IC) fabrication technologies (e.g., very largescale integration, VLSI) and may enable the penetration of Si processing into photonics. In the second part, we describe the creation of 2D photonic-crystal slabs operating at the λ = 1.55 μm communications wavelength. This class of 2D photonic crystals is particularly promising for planar on-chip guiding, trapping, and switching of light.

scholarly journals Timing Optimization During the Physical Synthesis of Cell-Based VLSI Circuits

2017 ◽  
Author(s):  
Vinícius Dos Santos Livramento ◽  
José Luís Güntzel
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Cmos Technology ◽  
Vlsi Circuits ◽  
Consumer Electronics ◽  
Clock Frequency ◽  
Wide Range ◽  
Large Scale Integration ◽  
On Chip ◽  
Scale Integration

The evolution of CMOS technology made possible integrated circuits with billions of transistors assembled into a single silicon chip, giving rise to the jargon Very-Large-Scale Integration (VLSI). VLSI circuits span a wide range class of applications, including Application Specific Circuits and Systems-On-Chip. The latter are responsible for fueling the consumer electronics market, especially in the segment of smartphones and tablets, which are responsible for pushing hardware performance requirements every new generation. The required clock frequency affects the performance of a VLSI circuit and induces timing constraints that must be properly handled by synthesis tools. This thesis focuses on techniques for timing closure of cellbased VLSI circuits, i.e. techniques able to iteratively reduce the number of timing violations until the synthesis of the synchronous digital system reaches the specified target frequency.

scholarly journals Multimode silicon photonics

Nanophotonics ◽  
2018 ◽  
Vol 8 (2) ◽  
pp. 227-247 ◽  
Author(s):  
Chenlei Li ◽  
Dajian Liu ◽  
Daoxin Dai
Keyword(s):  
Integrated Circuits ◽  
Silicon Photonics ◽  
Fundamental Mode ◽  
Optical Filters ◽  
Photonic Devices ◽  
Higher Order ◽  
Multimode Waveguide ◽  
Higher Order Modes ◽  
Silicon Photonic ◽  
On Chip

AbstractMultimode silicon photonics is attracting more and more attention because the introduction of higher-order modes makes it possible to increase the channel number for data transmission in mode-division-multiplexed (MDM) systems as well as improve the flexibility of device designs. On the other hand, the design of multimode silicon photonic devices becomes very different compared with the traditional case with the fundamental mode only. Since not only the fundamental mode but also the higher-order modes are involved, one of the most important things for multimode silicon photonics is the realization of effective mode manipulation, which is not difficult, fortunately because the mode dispersion in multimode silicon optical waveguide is very strong. Great progresses have been achieved on multimode silicon photonics in the past years. In this paper, a review of the recent progresses of the representative multimode silicon photonic devices and circuits is given. The first part reviews multimode silicon photonics for MDM systems, including on-chip multichannel mode (de)multiplexers, multimode waveguide bends, multimode waveguide crossings, reconfigurable multimode silicon photonic integrated circuits, multimode chip-fiber couplers, etc. In the second part, we give a discussion about the higher-order mode-assisted silicon photonic devices, including on-chip polarization-handling devices with higher-order modes, add-drop optical filters based on multimode Bragg gratings, and some emerging applications.

scholarly journals Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Frédéric Peyskens ◽  
Chitraleema Chakraborty ◽  
Muhammad Muneeb ◽  
Dries Van Thourhout ◽  
Dirk Englund
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Large Scale ◽  
Single Photon ◽  
Transition Metal Dichalcogenides ◽  
Building Blocks ◽  
Single Photon Emitters ◽  
Metal Dichalcogenides ◽  
On Chip ◽  
Scale Integration

Abstract Photonic integrated circuits (PICs) enable the miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Integrated single photon emitters (SPEs) are central building blocks for such quantum photonic circuits. SPEs embedded in 2D transition metal dichalcogenides have some unique properties that make them particularly appealing for large-scale integration. Here we report on the integration of a WSe2 monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the SPE host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips.

scholarly journals Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect

Molecules ◽  
2021 ◽  
Vol 26 (22) ◽  
pp. 6849
Author(s):  
Yan Fan ◽  
Tao Wang ◽  
Yinwei Qiu ◽  
Yinli Yang ◽  
Qiubo Pan ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Integrated Circuits ◽  
Oxygen Content ◽  
Large Scale ◽  
Theoretical Calculations ◽  
Optical Interconnection ◽  
Chemical Doping ◽  
Rectification Effect ◽  
Long Term Storage ◽  
Type Semiconductor

Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.

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