scholarly journals Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect

Molecules ◽  
2021 ◽  
Vol 26 (22) ◽  
pp. 6849
Author(s):  
Yan Fan ◽  
Tao Wang ◽  
Yinwei Qiu ◽  
Yinli Yang ◽  
Qiubo Pan ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Integrated Circuits ◽  
Oxygen Content ◽  
Large Scale ◽  
Theoretical Calculations ◽  
Optical Interconnection ◽  
Chemical Doping ◽  
Rectification Effect ◽  
Long Term Storage ◽  
Type Semiconductor

Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.

scholarly journals Graphene oxide films for advanced ultra-flat optical devices and photonic integrated circuits

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Optical Properties ◽  
Graphene Oxide ◽  
Integrated Circuits ◽  
Large Scale ◽  
Photonic Devices ◽  
Significant Development ◽  
Future Improvement ◽  
On Chip ◽  
High Flexibility ◽  
Made In

With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of two-dimensional (2D) materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences. This paper reviews the recent advances in this emerging field, providing an overview of the optical properties of GO as well as methods for the on-chip integration of GO. The main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.

scholarly journals Graphene oxide films for advanced ultra-flat optical devices and photonic integrated circuits

2020 ◽  
Author(s):  
David Moss
Keyword(s):  
Optical Properties ◽  
Graphene Oxide ◽  
Integrated Circuits ◽  
Large Scale ◽  
Photonic Devices ◽  
Significant Development ◽  
Future Improvement ◽  
On Chip ◽  
High Flexibility ◽  
Made In

With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of two-dimensional (2D) materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences. This paper reviews the recent advances in this emerging field, providing an overview of the optical properties of GO as well as methods for the on-chip integration of GO. The main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.

Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

Characterization of Interconnect Defects Using Scanning Thermal Conductivity Microscopy

2004 ◽  
Author(s):  
H.W. Ho ◽  
J.C.H. Phang ◽  
A. Altes ◽  
L.J. Balk
Keyword(s):  
Thermal Conductivity ◽  
Integrated Circuits ◽  
Large Scale

Abstract In this paper, scanning thermal conductivity microscopy is used to characterize interconnect defects due to electromigration. Similar features are observed both in the temperature and thermal conductivity micrographs. The key advantage of the thermal conductivity mode is that specimen bias is not required. This is an important advantage for the characterization of defects in large scale integrated circuits. The thermal conductivity micrographs of extrusion, exposed and subsurface voids are presented and compared with the corresponding topography and temperature micrographs.

scholarly journals Mechanical Properties of Graphene Oxide Coupled by Multi-Physical Field: Grain Boundaries and Functional Groups

Crystals ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 62
Author(s):  
Xu Xu ◽  
Zeping Zhang ◽  
Wenjuan Yao
Keyword(s):  
Mechanical Properties ◽  
Graphene Oxide ◽  
Grain Boundaries ◽  
Functional Groups ◽  
Oxygen Content ◽  
Tensile Fracture ◽  
Hydroxyl Groups ◽  
Molecular Configuration ◽  
Spatial Design ◽  
Out Of Plane

Graphene and graphene oxide (GO) usually have grain boundaries (GBs) in the process of synthesis and preparation. Here, we “attach” GBs into GO, a new molecular configuration i.e., polycrystalline graphene oxide (PGO) is proposed. This paper aims to provide an insight into the stability and mechanical properties of PGO by using the molecular dynamics method. For this purpose, the “bottom-up” multi-structure-spatial design performance of PGO and the physical mechanism associated with the spatial structure in mixed dimensions (combination of sp2 and sp3) were studied. Also, the effect of defect coupling (GBs and functional groups) on the mechanical properties was revealed. Our results demonstrate that the existence of the GBs reduces the mechanical properties of PGO and show an “induction” role during the tensile fracture process. The presence of functional groups converts in-plane sp2 carbon atoms into out-of-plane sp3 hybrid carbons, causing uneven stress distribution. Moreover, the mechanical characteristics of PGO are very sensitive to the oxygen content of functional groups, which decrease with the increase of oxygen content. The weakening degree of epoxy groups is slightly greater than that of hydroxyl groups. Finally, we find that the mechanical properties of PGO will fall to the lowest values due to the defect coupling amplification mechanism when the functional groups are distributed at GBs.

scholarly journals Nitrogen-enriched graphene framework from a large-scale magnesiothermic conversion of CO2 with synergistic kinetics for high-power lithium-ion capacitors

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Chen Li ◽  
Xiong Zhang ◽  
Kai Wang ◽  
Xianzhong Sun ◽  
Yanan Xu ◽  
...  
Keyword(s):  
Energy Density ◽  
High Power ◽  
Power Output ◽  
Large Scale ◽  
Electrode Materials ◽  
Lithium Ion ◽  
High Energy ◽  
High Energy Density ◽  
Chemical Doping ◽  
Lithium Ion Capacitor

AbstractLithium-ion capacitors are envisaged as promising energy-storage devices to simultaneously achieve a large energy density and high-power output at quick charge and discharge rates. However, the mismatched kinetics between capacitive cathodes and faradaic anodes still hinder their practical application for high-power purposes. To tackle this problem, the electron and ion transport of both electrodes should be substantially improved by targeted structural design and controllable chemical doping. Herein, nitrogen-enriched graphene frameworks are prepared via a large-scale and ultrafast magnesiothermic combustion synthesis using CO2 and melamine as precursors, which exhibit a crosslinked porous structure, abundant functional groups and high electrical conductivity (10524 S m−1). The material essentially delivers upgraded kinetics due to enhanced ion diffusion and electron transport. Excellent capacities of 1361 mA h g−1 and 827 mA h g−1 can be achieved at current densities of 0.1 A g−1 and 3 A g−1, respectively, demonstrating its outstanding lithium storage performance at both low and high rates. Moreover, the lithium-ion capacitor based on these nitrogen-enriched graphene frameworks displays a high energy density of 151 Wh kg−1, and still retains 86 Wh kg−1 even at an ultrahigh power output of 49 kW kg−1. This study reveals an effective pathway to achieve synergistic kinetics in carbon electrode materials for achieving high-power lithium-ion capacitors.

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