Characterisation of Titanium Nitride Thin Films Deposited by Cathodic Arc Plasma Technique on AISI D6 Tool Steel

2005 ◽  
pp. 717-721
Author(s):  
R.A. Vieira ◽  
Maria Carmo Andrade Nono
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Tool Steel ◽  
Arc Plasma ◽  
Plasma Technique ◽  
Cathodic Arc

Organometallic Precursors to Vanadium and Titanium Carbonitride

1992 ◽  
Vol 271 ◽  
Author(s):  
Francois Laurent ◽  
Christophe Daures ◽  
Lydie Valade ◽  
Robert Choukroun ◽  
Jean-Pierre Legros ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Tool Steel ◽  
Free Carbon ◽  
Titanium Carbonitride ◽  
Vanadium Complex ◽  
Xps Analysis ◽  
Titanium Complexes ◽  
Thermoanalytical Studies ◽  
Organometallic Precursors

ABSTRACTWe repon on the syntheses, structural and thermoanalytical studies of two titanium complexes CpTiCl2N(SiMe3)2 and FTi[N(Sime3)2]3 and one vanadium complex V(NEt2)4. CpTiCl2N(SiMe3)2 has been used in a hot wall CVD reactor as a precursor to titanium nitride. Thin films of typically 1 XPS in thickness have been deposited at 600°C on glass, silicon and tool steel. XPS analyses of the deposits show titanium carbonitride to be formed. The new FTi[N(Sime3)2]3 complex can also be used as a precursor to titanium nitride. V(NEt2>4 led at 500°C to the deposition of vanadium carbonitride characterized by XPS analysis. Films tended to contain excess free carbon.

Deposition of superhard TiAlSiN thin films by cathodic arc plasma deposition

2005 ◽  
Vol 200 (5-6) ◽  
pp. 1391-1394 ◽  
Author(s):  
S.K. Kim ◽  
P.V. Vinh ◽  
J.H. Kim ◽  
T. Ngoc
Keyword(s):  
Thin Films ◽  
Plasma Deposition ◽  
Arc Plasma ◽  
Cathodic Arc

Oxidation of TiAlCrSiN Thin Films at 1000°C in Air

2015 ◽  
Vol 719-720 ◽  
pp. 127-131
Author(s):  
Min Jung Kim ◽  
Dong Bok Lee
Keyword(s):  
Thin Films ◽  
Oxide Scale ◽  
Oxidation Resistance ◽  
Plasma Deposition ◽  
Arc Plasma ◽  
Cathodic Arc

TiAlCrSiN thin films consisting of alternating TiCrN and AlSiN nanolayers were deposited by cathodic arc plasma deposition, and oxidized at 1000°C in air. When oxidized for 10 h, about 1 μm-thick oxide sale formed, and its surface was covered with numerous tiny oxide crystallites. When oxidized for 30 h, about 2.5 μm-thick oxide scale formed, and began to spall from the surface. When oxidized for 80 h, the oxide sale was about 12.2 μm-thick. The film had a reasonable oxidation resistance due mainly to Al, Cr, and Si, which formed protective oxides.

Deposition of superhard nanolayered TiCrAlSiN thin films by cathodic arc plasma deposition

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5395-5399 ◽  
Author(s):  
Sun Kyu Kim ◽  
Pham Van Vinh ◽  
Jae Wook Lee
Keyword(s):  
Thin Films ◽  
Plasma Deposition ◽  
Arc Plasma ◽  
Cathodic Arc
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