Organometallic Precursors to Vanadium and Titanium Carbonitride
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ABSTRACTWe repon on the syntheses, structural and thermoanalytical studies of two titanium complexes CpTiCl2N(SiMe3)2 and FTi[N(Sime3)2]3 and one vanadium complex V(NEt2)4. CpTiCl2N(SiMe3)2 has been used in a hot wall CVD reactor as a precursor to titanium nitride. Thin films of typically 1 XPS in thickness have been deposited at 600°C on glass, silicon and tool steel. XPS analyses of the deposits show titanium carbonitride to be formed. The new FTi[N(Sime3)2]3 complex can also be used as a precursor to titanium nitride. V(NEt2>4 led at 500°C to the deposition of vanadium carbonitride characterized by XPS analysis. Films tended to contain excess free carbon.
2005 ◽
pp. 717-721
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1989 ◽
Vol 50
(C7)
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pp. C7-169-C7-173
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1986 ◽
Vol 4
(6)
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pp. 2463-2469
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