Oxidant for Chemical Mechanical Polishing of Single Crystal Diamond

2014 ◽  
Vol 1027 ◽  
pp. 80-83 ◽  
Author(s):  
Zhuo Ying Shi ◽  
Zhu Ji Jin ◽  
Hong Ming Xue ◽  
Shuang Ji Shi
Keyword(s):  
Single Crystal ◽  
Chemical Mechanical Polishing ◽  
Processing Method ◽  
Mechanical Polishing ◽  
Diamond Surface ◽  
High Tech ◽  
Fenton Reagent ◽  
High Chemical ◽  
Chemical Inertness ◽  
Single Crystal Diamond

Single crystal diamond is widely used in high-tech fields for its remarkable performance on mechanics, calorifics, optics, acoustics, etc. High-quality diamond surface with small roughness and low scathe are required in these applications. However, the extreme hardness and high chemical inertness of diamond result in severe processing difficulties. Chemical mechanical polishing (CMP) is a promising processing method which can obtain super-smooth and low-damage diamond surface. Oxidant is a key issue for CMP of single crystal diamond. In this study, five different oxidants were used to polish diamond samples. The results indicated that Fenton reagent was an appropriate CMP oxidant and a super-smooth diamond surface of Ra 2.4 nm was achieved by using Fenton reagent in CMP.

A novel slurry for chemical mechanical polishing of single crystal diamond

2021 ◽  
pp. 150431
Author(s):  
Longxing Liao ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Dongdong Liu ◽  
Bin Wu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Single Crystal Diamond

Limits of single crystal diamond surface mechanical polishing

2018 ◽  
Vol 87 ◽  
pp. 149-155 ◽  
Author(s):  
M.A. Doronin ◽  
S.N. Polyakov ◽  
K.S. Kravchuk ◽  
S.P. Molchanov ◽  
A.A. Lomov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mechanical Polishing ◽  
Diamond Surface ◽  
Single Crystal Diamond

scholarly journals Annealing Temperature on Contact Properties between Nickel Film and Hydrogen-Terminated Single Crystal Diamond

Coatings ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 876
Author(s):  
Pengfei Zhang ◽  
Shaopeng Zhang ◽  
Weidong Chen ◽  
Shufang Yan ◽  
Wen Ma ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ohmic Contact ◽  
Annealing Temperature ◽  
Hydrogen Atmosphere ◽  
Nickel Film ◽  
Diamond Surface ◽  
Transmission Line Model ◽  
Single Crystal Diamond ◽  
Specific Contact ◽  
Increasing Temperature

Ohmic contact of nickel on hydrogen-terminated single-crystal diamond film was investigated with an annealing temperature ranging from room temperature to 750 °C in hydrogen atmosphere. Nickel film was deposited on a hydrogen-terminated single-crystal diamond surface with gold film in order to protect it from oxidation. Contact properties between nickel and hydrogen-terminated single crystal diamond were measured by a circular transmission line model. The lowest specific contact resistivity was 7.82 × 10−5 Ω cm2 at annealing temperature of 750 °C, indicating good ohmic contact, which reveals improved thermal stability by increasing temperature.

Removal and characterization of focused-ion-beam-induced damaged layer on single crystal diamond surface and application to multiple depth patterning

2016 ◽  
Vol 70 ◽  
pp. 159-166 ◽  
Author(s):  
Noritaka Kawasegi ◽  
Seiya Kuroda ◽  
Noboru Morita ◽  
Kazuhito Nishimura ◽  
Makoto Yamaguchi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Diamond Surface ◽  
Single Crystal Diamond

scholarly journals Integration Technology for Wafer-Level LiNbO3 Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2554
Author(s):  
Wenping Geng ◽  
Xiangyu Yang ◽  
Gang Xue ◽  
Wenhao Xu ◽  
Kaixi Bi ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Chemical Mechanical Polishing ◽  
Adhesive Bonding ◽  
Mechanical Polishing ◽  
Bonding Interface ◽  
Infrared Analysis ◽  
Mems Devices ◽  
Wafer Level ◽  
Integration Technology

An integration technology for wafer-level LiNbO3 single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality PI film that can be used for wafer-level bonding is obtained. A high bonding strength of 11.38 MPa is obtained by a tensile machine. The bonding interface is uniform, completed and non-porous. After the PI adhesive bonding process, the LiNbO3 single-crystal was lapped by chemical mechanical polishing. The thickness of the 100 mm diameter LiNbO3 can be decreased from 500 to 10 μm without generating serious cracks. A defect-free and tight bonding interface was confirmed by scanning electron microscopy. X-ray diffraction results show that the prepared LiNbO3 single-crystal thin film has a highly crystalline quality. Heterogeneous integration of LiNbO3 single-crystal thin film on Si is of great significance to the fabrication of MEMS devices for in-situ measurement of space-sensing signals.

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