Effect of Film Thickness on Structure and Property of Pb(Zr0.53Ti0.47)O3 Thin Film

2010 ◽  
Vol 150-151 ◽  
pp. 112-117 ◽  
Author(s):  
Min Xian Shi ◽  
Wei Mao ◽  
Yan Qin ◽  
Zhi Xiong Huang ◽  
Dong Yun Guo
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Film Thickness ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Xrd Analysis ◽  
Structure And Property ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Ferroelectric Hysteresis

Pb(Zr0.53Ti0.47)O3 thin films with thickness of 120nm, 190nm, 310nm, 440nm and 630nm were deposited on Pt/Ti/SiO2/Si substrates by sol-gel process through repeating spining process 2 times, 4 times, 6 times, 8 times and 10 times respectively. The structures of PZT films were investigated by SEM and XRD analysis. The ferroelectric hysteresis loops were recorded by Radiant Precision Workstation and dielectric properties were measured using an Agilent HP4294A impedance analyzer. X-ray diffraction indicated that with the film thickness increasing, the diffraction intensity increased. The thickness of PZT film had great effect on ferroelectric and dielectric properties. Conclusively when the film thickness was about 310nm, the PZT thin films possessed better ferroelectric and dielectric properties.

Influence of Bi3.15Nd0.85Ti3O12 Buffer Layer on Structure and Electrical Properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 Thin Films

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Current Density ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Sol Gel Process

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.

THICKNESS EFFECTS ON THE EPITAXIAL NATURE OF THE SINGLE-PHASE MULTIFERROIC THIN FILMS

2009 ◽  
Vol 08 (01n02) ◽  
pp. 81-85
Author(s):  
A. HUANG ◽  
S. Y. TAN ◽  
S. R. SHANNIGRAHI
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Film Thickness ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Sol Gel ◽  
Fold Increase ◽  
Xrd Analysis ◽  
Sol Gel Process

Multiferroic Bi 0.95 La 0.05 Fe 0.7 Sc 0.3 O 3 (BLFS) thin films with different thicknesses have been prepared on (1 0 0) LaAlO 3 (LAO) substrates using a sol–gel process and annealed in N 2 ambient at 650°C for 5 min. From the X-ray diffraction (XRD) analysis, it was observed that BLFS thin films had (h 0 0)-preferred orientation for the film thickness 63, 125, 186, and 240 nm and became isotropic thereafter. The films developed in-plane epitaxial growth with respect to the substrate. The surface morphology became denser and the surface roughness increased as thickness increased up to 241 nm. The highest dielectric constant observed for the 241 nm thick BLFS film too. No prominent of the leakage current density observed for the film thickness up to 241 nm. However, two fold increase in the leakage current density observed for the film thickness 382 nm. For the BLFS films with thickness 241 nm, we observed the highest dielectric constant (ε) value of 1675 and remnant polarization (Pr) polarization value of 52 μC/cm2 using a sol–gel spin coating process.

Film Thickness-Dependent Microstructures and Dielectric Properties of Pb(Zr,Ti)O3 Thick Films by Sol-Gel Processing

2011 ◽  
Vol 80-81 ◽  
pp. 688-692 ◽  
Author(s):  
Ya Ting Zhang ◽  
Xiu Jian Chou ◽  
Wen Ping Geng ◽  
Ying Tian ◽  
Ji Jun Xiong ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Film Thickness ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Thick Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Sol Gel Process ◽  
Gel Processing

Lead zirconate titanate thick films with thickness of 1-3μm have been prepared by a sol-gel process. Influence of film thickness on microstructures and dielectric properties of the films were investigated. The film thickness dependent of microstructures was studied by XRD and Raman spectrum. The PZT films were dense and possessed preferential crystal orientation. Ferroelectricity and dielectric properties were confirmed by P–E hysteresis loops and C-E measurements. The dielectric constant and dielectric loss of the film with thickness of 3.045μm were 2000 and 0.055, respectively. The decrease of the coercive field and the increase of the remanent polarization with the increase in thickness were observed. As film thickness was increasing, PZT thick films had higher (110)-preferred growth orientation and excellent dielectric and ferroelectric properties.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Optical and dielectric properties of (Zr0.8,Sn0.2)TiO4 thin films prepared by sol–gel process

2003 ◽  
Vol 99 (1-3) ◽  
pp. 382-385 ◽  
Author(s):  
W.X Cheng ◽  
A.L Ding ◽  
P.S Qiu ◽  
X.Y He ◽  
X.Sh Zheng
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Sol Gel Process

Structure and dielectric properties of 80%Pb(Zn1/3Nb2/3)O3–20%PbTiO3 thin films prepared by modified sol–gel process

2011 ◽  
Vol 60 (2) ◽  
pp. 164-169 ◽  
Author(s):  
Chuanqing Li ◽  
Aiyun Liu ◽  
Junqiang Shi ◽  
Yafei Ruan ◽  
Lei Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Sol Gel Process

Relaxor Behavior in Ba0.8Sr0.2TiO3/ZrO2 Heterostructured Thin Films

2012 ◽  
Vol 1454 ◽  
pp. 89-96 ◽  
Author(s):  
Santosh K. Sahoo ◽  
H. Bakhru ◽  
Sumit Kumar ◽  
D. Misra ◽  
Y. N. Mohapatra ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Oxygen Vacancies ◽  
Sol Gel ◽  
Single Layer ◽  
Relaxor Behavior ◽  
Bst Thin Films ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Loss Maximum

ABSTRACTBa0.8Sr0.2TiO3 (BST) thin films and Ba0.8Sr0.2TiO3/ZrO2 heterostructured thin films have been successfully fabricated on Pt/Ti/SiO2/Si substrates by a sol-gel process. The dielectric properties of these films were measured as a function of temperature in the frequency range of 1 kHz to 1 MHz. It is clearly observed that the dielectric peaks exist and shift to high temperature with the increase of frequency indicating the presence of relaxor-type behavior in the films. Also it is seen that one dielectric peak is observed in single layer BST thin films whereas two dielectric peaks are observed in BST/ZrO2 heterostructured thin films due to the presence of two dielectric layers having different band gap energies. The variation of peak temperature Tm, corresponding to dielectric loss maximum, with frequency and fitting to Arrhenius law gives activation energy of 1.24 eV which is very close to the activation energy of oxygen vacancies in BaTiO3. Hence, oxygen vacancies are the active defects which are contributing to the relaxation process in these films.

Structural, Magnetic, and Electrical Properties of BiFe1-xMnxO3 Thin Films

2009 ◽  
Vol 1199 ◽  
Author(s):  
Danilo G Barrionuevo ◽  
Surinder P Singh ◽  
Maharaj S. Tomar
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Magnetic Measurements ◽  
Sol Gel ◽  
Ion Concentration ◽  
Ferromagnetic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Sol Gel Process

AbstractWe synthesized BiFe1-xMnxO3 (BFMO) for various compositions by sol gel process and thin films were deposited by spin coating on platinum Pt/Ti/SiO2/Si substrates. X-ray diffraction shows all the diffraction planes corresponding to rhombohedrally distorted perovskite BiFeO3 structure. The absence of any impurity phase in the films suggests the incorporation Mn ion preferentially to Fe site in the structure for low concentration. Magnetic measurements reveal the formation of ferromagnetic phase at room temperature with increased Mn substitution. On the other hand, ferroelectric polarization decreases with increasing Mn ion concentration. Raman studies suggest the dopant induced structural distortion.

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