High Transparency Characteristics of Zinc Oxide Thin Films Annealed at Different Temperatures

2013 ◽  
Vol 667 ◽  
pp. 367-370 ◽  
Author(s):  
A.S.M. Rodzi ◽  
Mohamad Hafiz Mamat ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood

Zinc Oxide thin film has been prepared by sol-gel spin-coating techniques and has three steps preparation were includes. They were solution preparation, thin film deposition and characterization process. The film were prepared to investigate the annealing temperatures depend with two environments were hot and room temperatures. Annealing temperatures were set up into five temperatures 200°C, 300°C, 400°C, 500°C, and 600°C were heated inside furnace. The characterization of ZnO thin film was measured by UV-Vis Spectrometry which to measure the transmittance of ZnO have when through the medium. The transmittance was investigated by use glass as a substrate. The optical properties showed when increased annealing temperatures, so the high UV was transmit. From that, the absorption coefficient of ZnO also can also investigate too. The surface morphology in increasing annealing temperature has a small size and less porosity between particles.

2010 ◽  
Vol 55 (3) ◽  
pp. 385-393 ◽  
Author(s):  
Dayene M. Carvalho ◽  
Jorge L. B. Maciel ◽  
Leandro P. Ravaro ◽  
Rogério E. Garcia ◽  
Valdemir G. Ferreira ◽  
...  

2013 ◽  
Vol 667 ◽  
pp. 549-552
Author(s):  
A.S.M. Rodzi ◽  
Mohamad Hafiz Mamat ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood

The properties of zinc oxide thin films were prepared by sol-gel spin-coating method have been presented. This study based on optical and electrical properties of ZnO thin film. The effects of annealing temperatures that exposed with two environments properties have been investigated. Environments exposed in room (27°C) and hot (80°C) temperatures which are stored by various days. Solution preparation, thin film deposition and characterization process were involved in this project. The ZnO films were characterized using UV-Vis-NIR spectrophotometer for optical properties. From that equipment, the percentage of transmittance (%) and absorption coefficient spectra were obtained. With two environments showed have different absorption coefficient are reveal and all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. From SEM investigations the surface morphology of ZnO thin film shows the particles size become smaller and denser in hot temperatures while in room temperatures have porosity between particles.


2020 ◽  
Vol 981 ◽  
pp. 51-58
Author(s):  
Agus Geter Edy Sutjipto ◽  
Yit Pei Shian ◽  
Ali Shaitir ◽  
Mohamad Ashry Jusoh ◽  
Ari Legowo

This research deals with ambient energy harvesting by using zinc oxide thin film. The objectives of this thesis are to prove the ZnO film as a piezoelectric material can produce electric when vibration is applied and determine its optimal voltage. The thesis describes the sol gel spin coating technique to fabricate zinc oxide thin film. Zinc acetate dehydrate, absolute ethanol and diethanolamine were used in this thesis to act as sol gel precursor. Sol gel was coated on glass slide which wrapped by aluminum foil. The thin film was formed after preheating and annealing. The thin film was characterized by X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Photoluminescence spectroscopy (PL) and Ultraviolet-visible spectroscopy (UV-Vis) as well as analyzed using vibration technique. From XRD results, the films were preferentially diffracted at around 65° which corresponding to (1 1 2) diffraction phase. From FESEM results, it was observed that when the spin speed was increased at same annealing temperature, the thickness was also decreased. When the annealing temperature was increased at same spin speed, both grain size and thickness were increased. From the PL results, there was only film with spin speed of 2000 rpm and annealing temperature of 300 °C had slightly left wavelength which was 380 nm. Annealing temperature would affect only the intensity of PL wavelength. From the results of UV-Vis, it was observed that when the spin speed was increased at same annealing temperature, the band gap was decreased. When the annealing temperature was increased at same spin speed, the band gap was decreased. Piezoelectric test had proven the ZnO film could produce electricity. The maximum voltage (20.7 mV) was produced by the ZnO film with spin speed of 2000 rpm and annealing temperature of 300 °C.


2007 ◽  
Vol 202 (3) ◽  
pp. 453-459 ◽  
Author(s):  
V. Khatko ◽  
J. Calderer ◽  
S. Vallejos ◽  
E. Llobet ◽  
X. Correig

2013 ◽  
Vol 667 ◽  
pp. 553-557 ◽  
Author(s):  
M. Awalludin ◽  
Mohamad Hafiz Mamat ◽  
Mohd Zainizan Sahdan ◽  
Z. Mohamad ◽  
Mohamad Rusop

This paper focus on nanostructured Zinc Oxide (ZnO) thin film based humidity sensor prepared using sol-gel method immersion technique at different immersion time. Scanning Electron Microscopy (SEM) investigations reveal nanorods ZnO were deposited on glass substrate with nanorods length increased with immersion time. All fabricated sensors show current intensity increment response when relative humidity is increased. Sensor fabricated at 16 hr immersion time shows the highest sensitivity in this study.


2010 ◽  
Vol 25 (4) ◽  
pp. 695-700 ◽  
Author(s):  
Young Hwan Hwang ◽  
Seok-Jun Seo ◽  
Byeong-Soo Bae

Thin-film transistors (TFTs) with zinc oxide channel layers were fabricated through a simple and low-cost solution process. Precursor solution concentration, annealing temperature, and the process were controlled for the purpose of improving the electrical properties of ZnO TFTs and analyzed in terms of microstructural scope. The fabricated ZnO films show preferential orientation of the (002) plane, which contributes to enhanced electron conduction and a dense surface. The results show that the TFT characteristics of the film are clearly affected by the microstructure. The optimized TFT operates in a depletion mode, shows n-type semiconductor behavior, and is highly transparent (>90%) within the visible light range. It exhibits a channel mobility of 9.4 cm2/V·s, a subthreshold slope of 3.3 V/decade, and an on-to-off current ratio greater than 105. In addition, the result of N2 annealing shows the possibility of improvement in electrical property of the ZnO TFTs.


2001 ◽  
Vol 16 (4) ◽  
pp. 463-473 ◽  
Author(s):  
M. Langlet ◽  
C. Coutier ◽  
J. Fick ◽  
M. Audier ◽  
W. Meffre ◽  
...  

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