An Analytical Model for Electrically Actuated Scanning Probe in Electrostatic Force Microscopy

AbstractIn this report, the local patterning of charge into CeO2/Si structures by scanning probe microscopy is examined. An electrostatic force microscope (EFM) has been used to write and image localized dots of charge on to double barrier CeO2/Si/CeO2/Si(lll) structures. By applying a large tip bias Vtip = 6 – 10 V and reducing the tip to sample separation to z = 3 – 5 nm for write times of t = 30 – 60 s, arrays of charge dots 60 – 250 nm FWHM have been written. The dependence of dot size and total stored charge on various writing parameters such as tip writing bias, tip to sample separation, and write time is examined. The total stored charge is found to be Q = 5 – 200 e per charge dot. These dots of charge are shown to be stable over periods of time greater than 24 hrs, with an initial charge decay time constant of τ ∼ 9.5 hrs followed by a period of much slower decay with τ > 24 hrs. Charge decay time constants are found to be dependent on the thickness of the lower CeO2 tunneling barrier.

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Imaging of the Carrier Density of States in Low Dimensional Structures Using Electrostatic Force Microscopy

MRS Proceedings ◽

10.1557/proc-545-345 ◽

1998 ◽

Vol 545 ◽

Author(s):

D. Gekhtman ◽

Z. B. Zhang ◽

D. Adderton ◽

M. S. Dresselhaus ◽

G. Dresselhaus

Keyword(s):

Density Of States ◽

Electrostatic Force ◽

Multiple Quantum Well ◽

Scanning Probe ◽

Electrostatic Force Microscopy ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Force Microscopy ◽

Wire Arrays ◽

Low Dimensional

AbstractIn this work we show that scanning probe electrostatic force microscopy (EFM) can be applied to low dimensional electronic nanostructures for imaging the density of states of quantum confined carriers. The results on EFM studies are presented for quasione- dimensional (ID) Bi quantum wire arrays and quasi-two-dimensional (2D) GaAs/AlxGa1-x As multiple quantum well structures.

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Electrostatic Force Microscopy of Nanofibers and Carbon Nanotubes: Quantitative Analysis Using Theory and Experiment

MRS Proceedings ◽

10.1557/proc-1025-b13-03 ◽

2007 ◽

Vol 1025 ◽

Author(s):

Sujit Sankar Datta ◽

Cristian Staii ◽

Nicholas J. Pinto ◽

Douglas R. Strachan ◽

AT Charlie Johnson

Keyword(s):

Carbon Nanotubes ◽

Electrostatic Force ◽

Electrical Contacts ◽

Scanning Probe ◽

Electrostatic Force Microscopy ◽

Electronic Density ◽

Basic Principles ◽

Force Microscopy ◽

Theory And Experiment

AbstractElectrostatic force microscopy (EFM) is a widely used scanning-probe technique for the characterization of electronic properties of nanoscale samples without the use of electrical contacts. Here we review the basic principles of EFM, developing a quantitative framework by which EFM measurements of extended nanostructures can be understood. We support our calculations with experimental data of EFM of carbon nanotubes and conducting or insulating electrospun polyaniline-based nanofibers. Furthermore, we explore routes towards extending EFM as a means of non-invasively probing the local electronic density of states of carbon nanotubes.

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Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.6.258 ◽

2015 ◽

Vol 6 ◽

pp. 2485-2497 ◽

Cited By ~ 2

Author(s):

Urs Gysin ◽

Thilo Glatzel ◽

Thomas Schmölzer ◽

Adolf Schöner ◽

Sergey Reshanov ◽

...

Keyword(s):

Silicon Carbide ◽

Electrostatic Force ◽

High Vacuum ◽

Ultra High Vacuum ◽

Scanning Probe ◽

Electrostatic Force Microscopy ◽

Kelvin Probe ◽

Large Area ◽

Force Microscopy ◽

Probe Microscope

Background: The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterization of conducting or semiconducting power devices with EFM methods requires an accurate and reliable technique from the nanometre up to the micrometre scale. For high force sensitivity it is indispensable to operate the microscope under high to ultra-high vacuum (UHV) conditions to suppress viscous damping of the sensor. Furthermore, UHV environment allows for the analysis of clean surfaces under controlled environmental conditions. Because of these requirements we built a large area scanning probe microscope operating under UHV conditions at room temperature allowing to perform various electrical measurements, such as Kelvin probe force microscopy, scanning capacitance force microscopy, scanning spreading resistance microscopy, and also electrostatic force microscopy at higher harmonics. The instrument incorporates beside a standard beam deflection detection system a closed loop scanner with a scan range of 100 μm in lateral and 25 μm in vertical direction as well as an additional fibre optics. This enables the illumination of the tip–sample interface for optically excited measurements such as local surface photo voltage detection. Results: We present Kelvin probe force microscopy (KPFM) measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches. In addition, we discuss KPFM measurements on cross sections of cleaved silicon carbide structures: a calibration layer sample and a power rectifier. To demonstrate the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination.

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Direct imaging method of frequency response of capacitance in dual bias modulation electrostatic force microscopy

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ab9ae0 ◽

2020 ◽

Vol 59 (7) ◽

pp. 078001

Author(s):

Ryota Fukuzawa ◽

Takuji Takahashi

Keyword(s):

Frequency Response ◽

Electrostatic Force ◽

Electrostatic Force Microscopy ◽

Imaging Method ◽

Direct Imaging ◽

Force Microscopy

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Determination of the Conductivity of Individual Carbon Nanotubes Based on Image Profile Analysis of Electrostatic Force Microscopy

Instruments and Experimental Techniques ◽

10.1134/s0020441219040031 ◽

2019 ◽

Vol 62 (4) ◽

pp. 578-581

Author(s):

N. A. Davletkildeev ◽

D. V. Sokolov ◽

E. Yu. Mosur ◽

V. V. Bolotov ◽

I. A. Lobov

Keyword(s):

Carbon Nanotubes ◽

Profile Analysis ◽

Electrostatic Force ◽

Electrostatic Force Microscopy ◽

Force Microscopy

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Review of time-resolved non-contact electrostatic force microscopy techniques with applications to ionic transport measurements

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.10.62 ◽

2019 ◽

Vol 10 ◽

pp. 617-633 ◽

Cited By ~ 5

Author(s):

Aaron Mascaro ◽

Yoichi Miyahara ◽

Tyler Enright ◽

Omur E Dagdeviren ◽

Peter Grütter

Keyword(s):

Atomic Force Microscopy ◽

Electrostatic Force ◽

Oscillation Period ◽

Electrostatic Force Microscopy ◽

Time Varying ◽

Time Resolved ◽

Battery Materials ◽

Force Microscopy ◽

Atomic Force ◽

Microscopy Techniques

Recently, there have been a number of variations of electrostatic force microscopy (EFM) that allow for the measurement of time-varying forces arising from phenomena such as ion transport in battery materials or charge separation in photovoltaic systems. These forces reveal information about dynamic processes happening over nanometer length scales due to the nanometer-sized probe tips used in atomic force microscopy. Here, we review in detail several time-resolved EFM techniques based on non-contact atomic force microscopy, elaborating on their specific limitations and challenges. We also introduce a new experimental technique that can resolve time-varying signals well below the oscillation period of the cantilever and compare and contrast it with those previously established.

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