SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

2008 ◽  
Vol 600-603 ◽  
pp. 123-126 ◽  
Author(s):  
Francesco La Via ◽  
Gaetano Izzo ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Condorelli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Layer ◽  
Structural Characterization ◽  
Defect Density ◽  
Schottky Diodes ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Characterization Methods ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 °C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process.

Very High Growth Rate Epitaxy Processes with Chlorine Addition

2007 ◽  
Vol 556-557 ◽  
pp. 157-160 ◽  
Author(s):  
Francesco La Via ◽  
Stefano Leone ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Condorelli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Schottky Diodes ◽  
High Growth ◽  
High Growth Rate ◽  
Electrical Characteristics ◽  
Standard Process ◽  
Characterization Methods ◽  
Deposition Chamber ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 °C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher.

Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process

2006 ◽  
Vol 527-529 ◽  
pp. 163-166 ◽  
Author(s):  
Francesco La Via ◽  
G. Galvagno ◽  
A. Firrincieli ◽  
Fabrizio Roccaforte ◽  
Salvatore di Franco ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Structural Characterization ◽  
Schottky Diodes ◽  
Epitaxial Layers ◽  
Electrical Characteristics ◽  
Standard Process ◽  
Characterization Methods ◽  
Deposition Chamber

The growth rate of 4H-SiC epi layers has been increased by a factor 3 (up to 18μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 °C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher.

Thick Epitaxial Layers Growth by Chlorine Addition

2009 ◽  
Vol 615-617 ◽  
pp. 55-60 ◽  
Author(s):  
Francesco La Via ◽  
Gaetano Izzo ◽  
Massimo Camarda ◽  
Giuseppe Abbondanza ◽  
Danilo Crippa
Keyword(s):  
Growth Rate ◽  
Defect Density ◽  
Low Cost ◽  
Schottky Diodes ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Particle Detectors ◽  
Characterization Methods ◽  
X Ray ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h by chlorine addition. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Very thick (> 100 µm) epitaxial layer has been grown and the Schottky diodes realized on these layers have good yield (> 87%) with a low defect density (10/cm2). This process gives the opportunity to realize very high power devices with breakdown voltages in the range of 10 kV or X-Ray and particle detectors with a low cost epitaxy process.

Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes

2005 ◽  
Vol 483-485 ◽  
pp. 429-432 ◽  
Author(s):  
Francesco La Via ◽  
Fabrizio Roccaforte ◽  
Salvatore di Franco ◽  
Alfonso Ruggiero ◽  
L. Neri ◽  
...  
Keyword(s):  
Growth Rate ◽  
Leakage Current ◽  
Epitaxial Layer ◽  
Defect Density ◽  
Growth Parameters ◽  
Schottky Diodes ◽  
Layer Growth ◽  
Epitaxial Layers ◽  
Low Leakage ◽  
Low Leakage Current

The effects of the Si/H2 ratio on the growth of the epitaxial layer and on the epitaxial defects was studied in detail. A large increase of the growth rate has been observed with the increase of the silicon flux in the CVD reactor. Close to a Si/H2 ratio of 0.05 % silicon nucleation in the gas phase occurs producing a great amount of silicon particles that precipitate on the wafers. The epitaxial layers grown with a Si/H2 ratio of 0.03% show a low defect density and a low leakage current of the Schottky diodes realized on these wafers. For these diodes the DLTS spectra show thepresence of several peaks at 0.14, 0.75, 1.36 and 1.43 eV. For epitaxial layers grown with higher values of the Si/H2 ratio and then with an higher growth rate, the leakage current of the Schottky diodes increases considerably.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

Control of Materials and Interfaces in μc-Si:H-based Solar Cells Grown at High Rate

2011 ◽  
Vol 1321 ◽  
Author(s):  
Yasushi Sobajima ◽  
Chitose Sada ◽  
Akihisa Matsuda ◽  
Hiroaki Okamoto
Keyword(s):  
Growth Rate ◽  
Solar Cells ◽  
Film Growth ◽  
Defect Density ◽  
Density Measurement ◽  
High Growth ◽  
High Growth Rate ◽  
High Rate ◽  
Bulk Region ◽  
Dangling Bond

ABSTRACTGrowth process of microcrystalline silicon (μc-Si:H) using plasma-enhanced chemicalvapor- deposition method under high-rate-growth condition has been studied for the control of optoelectronic properties in the resulting materials. We have found two important things for the spatial-defect distribution in the resulting μc-Si:H through a precise dangling-bond-density measurement, e. g., (1) dangling-bond defects are uniformly distributed in the bulk region of μc- Si:H films independent of their crystallite size and (2) large number of dangling bonds are located at the surface of μc-Si:H especially when the film is deposited at high growth rate. Starting procedure of film growth has been investigated as an important process to control the dangling-bond-defect density in the bulk region of resulting μc-Si:H through the change in the electron temperature by the presence of particulates produced at the starting period of the plasma. Deposition of Si-compress thin layer on μc-Si:H grown at high rate followed by thermal annealing has been proposed as an effective method to reduce the defect density at the surface of resulting μc-Si:H. Utilizing the starting-procedure-controlling method and the compress-layerdeposition method together with several interface-controlling methods, we have demonstrated the fabrication of high conversion-efficiency (9.27%) substrate-type (n-i-p) μc-Si:H solar cells whose intrinsic μc-Si:H layer is deposited at high growth rate of 2.3 nm/sec.

Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

2004 ◽  
Vol 815 ◽  
Author(s):  
H. Tsuchida ◽  
I. Kamata ◽  
S. Izumi ◽  
T. Tawara ◽  
T. Jikimoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Performance ◽  
Defect Density ◽  
Stacking Faults ◽  
High Growth ◽  
High Growth Rate ◽  
Effective Lifetime ◽  
Growth Technique ◽  
Homoepitaxial Growth

AbstractGrowth technique for thick SiC epilayers with a reduced micropipe density has been developed in a vertical hot-wall CVD reactor. Micropipe closing by growing an epilayer is possible with a nearly 100% probability for 4H-SiC substrates oriented (0001) and (000-1) off-cut towards either [11-20] or [1-100]. By applying the micropipe closing technique, a high-performance Schottky barrier diode (SBD) was demonstrated on a substrate including micropipes. Growth of low-doped and thick SiC epilayers is also possible with a good morphology at a high growth rate, and 14.4 kV blocking performance was demonstrated using a 210 μm-thick epilayer. Epitaxial growth on (000-1) substrates with low doping and a low epi-induced defect density was also demonstrated. Deep centers and impurities were investigated to determine the effective lifetime killer of the epilayers. Dislocations and stacking faults in epilayers grown on 4H-SiC substrates off-cut towards different directions were also investigated.

High growth rate 3C-SiC growth: from hetero-epitaxy to homo-epitaxy

MRS Advances ◽  
2016 ◽  
Vol 1 (54) ◽  
pp. 3643-3647 ◽  
Author(s):  
F. La Via ◽  
G. Litrico ◽  
R. Anzalone ◽  
A. Severino ◽  
M. Salanitri ◽  
...  
Keyword(s):  
Growth Rate ◽  
Film Thickness ◽  
Defect Density ◽  
High Growth ◽  
High Growth Rate ◽  
Sem Analysis ◽  
Final Thickness ◽  
Tem Analysis ◽  
Higher Temperature ◽  
Sic Film

Abstract 3C-SiC devices are hampered by a high crystal defect density due to the hetero-epitaxial growth of these films, which results in the presence of stacking faults (SF). In this paper high growth rate CVD processes have been used to try to reduce the SF density in 3C-SiC films. In a first step a high growth rate (30 μm/h) has been used to grow 50 μm thick 3C-SiC layer on (100) Si. Then the silicon substrate was removed via etching and a further 3C-SiC growth was performed with a higher growth rate (90 μm/h) at a higher temperature (1600 °C) to obtain a final thickness of 150 μm. The SF presence and density were evaluated by TEM analysis performed on as-grown samples and SEM analysis on KOH etched samples with various thicknesses. A decrease of SF density was observed with an increase of 3C-SiC film thickness, with the best results (500/cm) obtained for the thickest sample. The 3C-SiC film quality and orientation was evaluated by XRD are correlated with film thickness and SF density.

High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

2006 ◽  
Vol 911 ◽  
Author(s):  
Francesco La Via ◽  
Giuseppa Galvagno ◽  
Andrea Firrincieli ◽  
Salvatore Di Franco ◽  
Andrea Severino ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electrical Characterization ◽  
High Growth ◽  
High Growth Rate ◽  
Rate Process ◽  
Power Devices ◽  
Standard Process ◽  
Characterization Methods ◽  
Deposition Parameters ◽  
Horizontal Reactor

AbstractThe growth rate of 4H-SiC epitaxial layer has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. The effects of different deposition parameters on the epitaxial growth process have been described in detail. This process can be very promising for high power devices with a breakdown voltage of 10 kV.

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