Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process

2012 ◽  
Vol 711 ◽  
pp. 228-232
Author(s):  
Elias Al Alam ◽  
Ignasi Cortés ◽  
T. Begou ◽  
Antoine Goullet ◽  
Frederique Morancho ◽  
...  
Keyword(s):  
Surface Preparation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Plasma Oxidation ◽  
Interface Quality ◽  
Mos Capacitors ◽  
Dielectric Thin Film ◽  
P Type ◽  
Mos Structures ◽  
Uv Ozone

MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation and oxygen plasma oxidation, were compared in terms of resulting effective charge and interface trap density. A good SiO2/GaN interface quality was achieved for N-type MOS capacitances obtained both with continuousICPPECVD and ECR-PECVD deposition of the SiO2 dielectric. However, the interface quality is greatly reduced for MOS capacitors fabricated on P-type GaN.

Low-Temperature Device-Quality SiO2/Si (100) Interfaces Prepared By A Combined Remote Plasma Oxidation-Deposition Process

1991 ◽  
Vol 238 ◽  
Author(s):  
T. Yasuda ◽  
Y. Ma ◽  
G. Lucovsky
Keyword(s):  
Minority Carrier ◽  
Life Time ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Plasma Oxidation ◽  
Remote Plasma ◽  
Mos Capacitors ◽  
Remote Plasma Oxidation ◽  
Carrier Life Time

ABSTRACTGate-quality SiO2/Si(100) interfaces were reproducibly fabricated using a two-step remote plasma-assisted oxidation/thin-film deposition processing sequence at temperatures between 200 and 300°C. The pre-deposition oxidation creates approximately 0.5nm of SiO2, and produces an SiO2/Si interface with a midgap trap density of ∼1.3×1010cm−2eV−1. The MOS capacitors prepared by this technique have properties comparable to those with thermal oxides grown at 850–1050°C. These capacitors also show a longer minority-carrier life time in the underlying Si than samples prepared using other pre-deposition treatment methods.

Reliability of Nitrided Oxides in N- and P-type 4H-SiC MOS Structures

2004 ◽  
Vol 815 ◽  
Author(s):  
Sumi Krishnaswami ◽  
Mrinal K. Das ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
Electric Field ◽  
Time To Failure ◽  
Positive Bias ◽  
Mos Capacitors ◽  
Accumulation Mode ◽  
Bias Stress ◽  
Structural Differences ◽  
P Type ◽  
Mos Structures ◽  
Mean Time

AbstractTDDB measurements of NMOS capacitor fabricated with 1200°C dry oxide with 1300°C N2O anneal were performed at 175°C and 300°C under high positive bias stress. The devices are biased into strong accumulation mode such that the field in the oxide is high enough to collect breakdown data in a reasonable period of time. We observe that at 175°C, a 100-year Mean Time to Failure (MTTF) is obtained at an electric field of 3 MV/cm in the oxide. The TDDB measurement has also been performed at 300°C where lifetime has been reduced by a few orders of magnitude, but with an acceptable 100-year MTTF. Recent reliability results on similarly oxidized MOSFETs have shown failures along the same trend as the n-type capacitors, indicating that MOSFETs and MOS capacitors can have similar reliability despite inherent processing and structural differences. PMOS capacitors fabricated with the aforementioned dry + N2O process as well as capacitors fabricated using the low DIT nitridation techniques show acceptable MTTF of 100 years at the nominal operating electric field of 3 MV/cm.

Synthesis and Characterization of Copper Oxide Compounds

2014 ◽  
Vol 1633 ◽  
pp. 3-12 ◽  
Author(s):  
K.P. Hering ◽  
A. Polity ◽  
B. Kramm ◽  
A. Portz ◽  
B.K. Meyer
Keyword(s):  
Copper Oxide ◽  
Photoelectron Spectroscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Band Alignment ◽  
Synthesis And Characterization ◽  
Attractive Alternative ◽  
Oxide Compound ◽  
P Type

ABSTRACTThe p-type conducting Copper-oxide compound semiconductors (Cu2O, CuO) provide a unique possibility to tune the band gap energies from 2.1 eV to the infrared at 1.40 eV into the middle of the efficiency maximum for solar cell applications. By a pronounced non-stoichiometry the electronic properties may vary from insulating to metallic conduction. They appear to be an attractive alternative absorber material in terms of abundance, sustainability, non-toxicity of the elements, and numerous methods for thin film deposition that facilitate low cost production. The synthesis and characterization of Cu2O thin films used as p-type absorbers in heterojunction solar cells will be reported. We discuss properties of the undoped non-stoichiometric Cu2O, controlled p-type doping by nitrogen, analysis of band offsets by X-ray photoelectron spectroscopy (XPS). In addition we show proof of concept for an increase in photovoltaic conversion efficiency in AlGaN/Cu2O heterostructures due to a more favorable band alignment.

Surface smoothing and roughening by dielectric thin film deposition

1988 ◽  
Vol 27 (8) ◽  
pp. 1393 ◽  
Author(s):  
Angela Duparré ◽  
Heinz-Günter Walther
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Surface Smoothing ◽  
Dielectric Thin Film

scholarly journals Transmissive nonlocal multilayer thin film optical filter for image differentiation

Nanophotonics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 3519-3525
Author(s):  
Chunqi Jin ◽  
Yuanmu Yang
Keyword(s):  
Thin Film ◽  
Optical Filter ◽  
Optical Response ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Metallic Thin Films ◽  
Optical Components ◽  
Dielectric Thin Film ◽  
Nanophotonic Structures ◽  
Time Image

Abstract It is well-known that a Fourier optical system can be used to perform specific computing tasks, such as image differentiation, with a superior speed and power consumption in comparison with digital computers, despite bulky optical components that are often required. Recently, there has been a surge in the interest to design much more compact nanophotonic structures, such as dielectric and metallic thin films, photonic crystals, and metasurfaces with a tailored angle-dependent (nonlocal) optical response, to directly perform image differentiation without additional lenses for Fourier transformation. Here, we present a straightforward platform, a multilayer dielectric thin film optical filter, fabricated using mature wafer-scale thin film deposition technique, with an optimized nonlocal optical response, for isotropic image differentiation in transmission mode for arbitrary input polarization. The proposed thin film filter may be conveniently coated at various transparent surfaces and inserted in machine vision or microscopy systems for enhanced, real-time image processing.

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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