Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy
2015 ◽
Vol 821-823
◽
pp. 133-136
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Keyword(s):
The reduction of the growth pressure was demonstrated to have the same effect as the addition of chloride-containing gas on preventing the Si nucleation and the epitaxy with high growth rate (>50 μm/h) was achieved by using the decreasing pressure condition in a horizontal CVD reactor without chloride-containing gas. The quality of a 30-μm-thick epilayer grown with 40 μm/h was also investigated. Downfall and triangle defect density in the layer was as low as 0.16 /cm2, indicating that a high quality epitaxial wafer can be easily obtained under the condition with high throughput in the sinple CVD system.
2020 ◽
Vol 22
◽
pp. 100816
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Keyword(s):
2013 ◽
Vol 405
(29)
◽
pp. 9365-9374
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2000 ◽
Vol 9
(9-10)
◽
pp. 1673-1677
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Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
2008 ◽
Vol 600-603
◽
pp. 123-126
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Keyword(s):
Growth of high quality AlN/sapphire templates with high growth rate using a medium-temperature layer
2019 ◽
Vol 125
◽
pp. 343-347
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Keyword(s):
2010 ◽
Vol 443
◽
pp. 510-515
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Keyword(s):