Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 183-187
Author(s):  
Chi Kwong Tang ◽  
Lasse Vines ◽  
Bengt Gunnar Svensson ◽  
Eduard Monakhov
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Depletion Region ◽  
Charge Carrier Concentration ◽  
Defect Level ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Wet Chemical ◽  
Transient Spectroscopy ◽  
P Type

The interaction between hydrogen and the iron-boron pair (Fe-B) has been investigated in iron-contaminated boron-doped Cz-Si using capacitance-voltage measurements (CV) and deep level transient spectroscopy (DLTS). Introduction of hydrogen was performed by wet chemical etching and subsequent reverve bias annealing of Al Schottky diodes. The treatment led to the appearance of the defect level characteristic to interstitial iron (Fei) with a corresponding decrease in the concentration of the Fe-B pair. Concentration versus depth profiles of the defects show that dissociation of Fe-B occurs in the depletion region and capacitance-voltage measurements unveil a decrease in the charge carrier concentration due to passivation of B. These quantitative observations imply strongly that H promotes dissociation of Fe-B releasing Fei whereas no detectable passivation of Fe-B or Fei by H occurs.

Lateral Diffusion and Capture of Iron in P-Type Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Kevin L. Beaman ◽  
Aditya Agarwal ◽  
Sergei V. Koveshnikov ◽  
George A. Rozgonyi
Keyword(s):  
Ion Implantation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Lateral Diffusion ◽  
Lateral Motion ◽  
Dislocation Loops ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
P Type

AbstractThe lateral motion of iron impurities was observed and studied in ptype iron contaminated silicon. The lateral diffusion was induced by and then measured using Schottky diodes with a special interdigitated fingers design. Capture of the impurities was done by diffusing to laterally placed dislocation loops formed by a self aligned ion implantation. Lateral changes in Fe concentration were determined using capacitance-voltage and deep level transient spectroscopy.

Hydrogen Passivation of Defects in Electron Irradiated Polycrystalline Silicon Solar Cells

1995 ◽  
Vol 378 ◽  
Author(s):  
R.R. Bilyalov ◽  
B.M. Abdurakhmanov
Keyword(s):  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Deep Level ◽  
Photovoltaic Performance ◽  
Silicon Solar Cells ◽  
Silicon Substrates ◽  
Hydrogen Passivation ◽  
Boron Doped ◽  
Transient Spectroscopy ◽  
P Type

AbstractThe effect of hydrogen passivation on photovoltaic performance of 1 MeV electron irradiated polycrystalline cast silicon solar cells is described. These cells were processed on cast p-type boron doped polycrystalline silicon substrates using standard technology. Passivation was made by low-energy hydrogen ion implantation on the front side. Cells performance was measured as a function of fluence, and it was found that the hydrogenated cell had the higher radiation resistance.Defect behavior were studied using deep level transient spectroscopy and infra-red spectroscopy. It was shown that the concentration of vacancies (Ec −0,09 eV), divacancies (Ec −0,23 eV) and A-centers (Ec −0,18 eV) is significantly lower in hydrogenated samples. This consistency strengthens the belief that hydrogen interacts with vacancy-type defects to prevent formation of the secondary radiation defects. It is confirmed by IR-measurements.

Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods

2003 ◽  
Vol 798 ◽  
Author(s):  
H. Witte ◽  
K. Fluegge ◽  
A. Dadgar ◽  
A. Krtschil ◽  
A. Krost ◽  
...  
Keyword(s):  
Deep Level ◽  
Iron Doping ◽  
Defect Level ◽  
Temperature Dependent ◽  
Organic Vapor ◽  
Sapphire Substrates ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
P Type ◽  
Co Doped

ABSTRACTThe electrical activity of iron in Fe- doped, and in Si and Mg co-doped GaN layers grown on sapphire substrates by metal organic vapor phase epitaxy was studied as shown by temperature dependent Hall Effect (TDH) measurements. In all samples iron doping generates an acceptor defect, which compensates donors in n-type GaN. Furthermore, iron doping causes strong potential inhomogeneities, which decrease the Hall mobility in the layers. To verify, if iron creates only hole traps, defects in n-type Si:Fe and Fe doped samples were investigated. The well known dominant electron traps in n-type GaN at 520 – 550 meV and 480 meV were found by deep level transient spectroscopy and thermal admittance spectroscopy, respectively. A high Fe-doped GaN layer shows a low p-type conductivity dominated by the iron acceptor. An activation energy of EV+ 460 meV was determined by TDH indicating, that the iron acceptor correlates with this defect level.

Characterization of CdS–CuInSe2 solar cells by current–voltage, capacitance–voltage, and capacitance-transient measurements

1987 ◽  
Vol 65 (8) ◽  
pp. 966-971 ◽  
Author(s):  
N. Christoforou ◽  
J. D. Leslie ◽  
S. Damaskinos
Keyword(s):  
Solar Cells ◽  
Deep Level ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Carrier Trap ◽  
Transient Spectroscopy ◽  
Increasing Temperature ◽  
P Type ◽  
Capacitance Transient ◽  
Transient Measurements

CdS–CuInSe2 solar cells, which have an efficiency of 9%, have been studied by current–voltage, capacitance–voltage, and capacitance-transient measurements over the temperature range 90–380 K. Deep-level transient spectroscopy analysis of the capacitance transient measurements reveals one majority carrier trap with an activation energy of 0.70 ± 0.02 eV. Although the present experiment cannot establish definitely if the trap is in the CdS or CuInSe2 layer, arguments are presented that it is a hole trap in the p-type CuInSe2 layer. Current–voltage measurements indicate a reversible increase in the reverse-bias leakage current with increasing temperature above 300 K. Evidence is presented that suggests that the rectifying barrier height in the CdS–CuInSe2 solar cell decreases rapidly with temperature above 300 K. Capacitance versus voltage measurements suggest that the depiction layer being studied is primarily in the CuInSe2, but the temperature dependence of the ionized charge concentration N(x) cannot be totally explained although one possible cause is suggested.

Interface states of laser ablated BaTiO3 and Ba0.9Ca0.1TiO3 thin films in MFS structure determined by DLTS and C – V technique

2003 ◽  
Vol 784 ◽  
Author(s):  
P. Victor ◽  
S. Saha ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Deep Level ◽  
Low Frequency ◽  
Interface States ◽  
Excimer Laser Ablation ◽  
Inversion Region ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
P Type ◽  
Minority Carriers

ABSTRACTBaTiO3 and Ba0.9Ca0.1TiO3 thin films were deposited on the p – type Si substrate by pulsed excimer laser ablation technique. The Capacitance – Voltage (C-V) measurement measured at 1 MHz exhibited a clockwise rotating hysteresis loop with a wide memory window for the Metal – Ferroelectric – Semiconductor (MFS) capacitor confirming the ferroelectric nature. The low frequency C – V measurements exhibited the response of the minority carriers in the inversion region while at 1 MHz the C – V is of a high frequency type with minimum capacitance in the inversion region. The interface states of both the MFS structures were calculated from the Castagne – Vaipaille method (High – low frequency C – V curve). Deep Level Transient Spectroscopy (DLTS) was used to analyze the interface traps and capture cross section present in the MFS capacitor. There were distinct peaks present in the DLTS spectrum and these peaks were attributed to the presence of the discrete interface states present at the semiconductor – ferroelectric interface. The distribution of calculated interface states were mapped with the silicon energy band gap for both the undoped and Ca doped BaTiO3 thin films using both the C – V and DLTS method. The interface states of the Ca doped BaTiO3 thin films were found to be higher than the pure BaTiO3 thin films.

Investigation of Deep-Level Defects Lateral Distribution in Active Layers of Multicrystalline Silicon Solar Cells

MRS Advances ◽  
2017 ◽  
Vol 2 (53) ◽  
pp. 3141-3146 ◽  
Author(s):  
Vladimir G. Litvinov ◽  
Alexander V. Ermachikhin ◽  
Dmitry S. Kusakin ◽  
Nikolay V. Vishnyakov ◽  
Valery V. Gudzev ◽  
...  
Keyword(s):  
Solar Cells ◽  
Deep Level ◽  
Lateral Distribution ◽  
Silicon Solar Cells ◽  
Characteristics Method ◽  
Active Layers ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
P Type ◽  
Dlts Spectra

ABSTRACTThe influence of deep level defects lateral distribution in active layers of multicrystalline Si-based standard solar cells is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. One type of solar cells with conversion efficiency 20.4% was studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). From various places along the diagonal of solar cell’s substrate with 20.4% efficiency nine pieces with an area ∼20 mm2 were extracted and studied. I-DLTS spectra of the five pieces from solar cell were measured. The features of deep levels defects concentration lateral distribution along the SC’s surface were studied.

Investigation of the Influence of Deep-Level Defects on the Conversion Efficiency of Si-based Solar Cells

MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 911-916 ◽  
Author(s):  
Vladimir G. Litvinov ◽  
Nikolay V. Vishnyakov ◽  
Valery V. Gudzev ◽  
Nikolay B. Rybin ◽  
Dmitry S. Kusakin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Total Concentration ◽  
Characteristics Method ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTThe influence of deep level defects (DLs) on the conversion efficiency of multicrystalline Si-based standard solar cells (SCs) is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. Three types of SCs with conversion efficiency 10%, 16.8% and 20.4% were studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). The correlation between the total concentration of DLs and the values of the SCs conversion efficiency is found.

Characterization of a Metastable Defect Introduced In Epitaxially Grown Boron Doped Si by 5.4 Mev α-Particles

1998 ◽  
Vol 510 ◽  
Author(s):  
M. Mamor ◽  
F.D. Auret ◽  
S.A. Goodman ◽  
W.E. Meyer
Keyword(s):  
Room Temperature ◽  
Deep Level ◽  
Zero Bias ◽  
First Order Kinetics ◽  
Boron Doped ◽  
Particle Irradiation ◽  
Transient Spectroscopy ◽  
P Type ◽  
Metastable Defect

AbstractDeep level transient spectroscopy (DLTS) was used to examine the metastability of a defect configuration in epitaxially grown boron-doped p-type Si. We report the detection of a new metastable defect Hα2 in p-Si following room temperature alpha particle irradiation. DLTS measurements coupled with bias-on/bias-off cooling cycles were used to study the annealing and introduction kinetics of this metastable defect. After removing Hα2 by zero-bias annealing at room temperature, it was re-introduced by reverse bias annealing in the 240-265 K temperature range under predominantly first order kinetics. The energy level and apparent capture cross section, as determined by DLTS, were E,+ 0.43 eV and 1.4 × 10−15 cm2, respectively.

PL and DLTS Analysis of Carbon-Related Centers in Irradiated P-Type Cz-Si

2013 ◽  
Vol 205-206 ◽  
pp. 224-227 ◽  
Author(s):  
Bahman Raeissi ◽  
Naveengoud Ganagona ◽  
Augustinas Galeckas ◽  
Edouard V. Monakhov ◽  
Bengt Gunnar Svensson
Keyword(s):  
Heat Treatment ◽  
Proton Irradiation ◽  
Deep Level ◽  
Annealing Duration ◽  
Interstitial Oxygen ◽  
Defect Level ◽  
Interstitial Carbon ◽  
Transient Spectroscopy ◽  
P Type ◽  
Dlts Spectra

Photoluminescence (PL) and deep level transient spectroscopy (DLTS) have been used to investigate carbon related defects in p–type Cz–Si induced by proton irradiation. The interstitial carbon–interstitial oxygen (CiOi) level in DLTS and the corresponding C–line (789.5 meV) in PL spectra are detected in as–irradiated samples. Formations of the so–called P–line at 767 meV in PL and a new defect level at about 0.39 eV above the valence band edge, Ev, in the DLTS spectra are observed in the annealed samples. The evolution of the CiOiand Ev+0.39 eV levels in DLTS and also the C– and P– lines in PL upon post–irradiation heat–treatment is investigated, showing that the intensity of the CiOilevel decreases with heat–treatment, which is consistent with the PL data for the C–line. The intensity of the Ev+0.39 eV level is enhanced and then saturates with annealing duration. We tentatively assign this level to the interstitial carbon–oxygen dimer (CiO2i).

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