The Interlayer Effects of Nitrogen Implantation in the TiN/N2- Film Synthesis on the NAK80 Steel

Nitrogen ions with an energy of 200keV were used for the investigation of the interlayer effects of nitrogen implantation in the TiN/N2-film synthesis on the NAK80 steel. The nitrogen ion plasmas formed a broad ion mixing area at the interface between TiN film and NAK80 substrate. The measured hardness indicates the well mixing of TiN film into the NAK80 substrate, which may have an effect on increasing the adhesion of the deposited film. The chemical components and micro-hardness of the filmed surface were measured. The micro-hardness of Rockwell C-scale (HRC) was increased from 40 to 61 after the films of TiN/N2 were synthesized on the NAK80 substrate, the increased micro-hardness is attributed to the metallurgical phase change and formation of amorphous crystal due to the nitrogen implantation.

Engineering the electronic structure of 1T′-ReS2 through nitrogen implantation for enhanced alkaline hydrogen evolution

Controllable atomic engineering of N into 1T′-phase ReS2 regulates the electronic structure and leads to enhanced alkaline hydrogen evolution.

Modelling of nitrogen implantation processes into WC-Co indexable knives for wood-based material machining using ion implanters with or without direct ion beam

Modelling of nitrogen implantation processes into WC-Co indexable knives for wood-based material machining using ion implanters with or without direct ion beam. The paper presents the results of modelling of the depth profiles of nitrogen implanted to W-C-Co material using ion implanters with or without direct ion beam. The modelling was performed using the Monte Carlo method. The results were obtained for one fluence of the implanted ions and three different values of the acceleration voltage.