Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters

This work presents a study of photoconductive (PC) terahertz (THz) emitters based upon varied bow-tie (BT) antenna structures on the semi-insulating (SI) forms of GaAs and InP. The BT antennas have electrodes in the form of a Sharp BT, a Broad BT, an Asymmetric BT, a Blunted BT, and a Doubled BT. The study explores the main features of PC THz emitters for spectroscopic studies and sensors application in terms of THz field amplitude and spectral bandwidth. The emitters’ performance levels are found to depend strongly upon the PC material and antenna structure. The SI-InP emitters display lower THz field amplitude and narrower bandwidth compared to the SI-GaAs emitters with the same structure (and dimensions). The characterized Doubled BT structure yields a higher THz field amplitude, while the characterized Asymmetric BT structure with flat edges yields a higher bandwidth in comparison to the sharp-edged structures. This knowledge on the PC THz emitter characteristics, in terms of material and structure, can play a key role in future implementations and applications of THz sensor technology.

Study of Radiation Characteristics of Intrinsic Josephson Junction Terahertz Emitters with Different Thickness of Bi2Sr2CaCu2O8+δ Crystals

The radiation intensity from the intrinsic Josephson junction high-Tc superconductor Bi2Sr2CaCu2O8+δ terahertz emitters (Bi2212-THz emitters) is one of the most important characteristics for application uses of the device. In principle, it would be expected to be improved with increasing the number of intrinsic Josephson junctions N in the emitters. In order to further improve the device characteristics, we have developed a stand alone type of mesa structures (SAMs) of Bi2212 crystals. Here, we understood the radiation characteristics of our SAMs more deeply, after we studied the radiation characteristics from three SAMs (S1, S2, and S3) with different thicknesses. Comparing radiation characteristics of the SAMs in which the number of intrinsic Josephson junctions are N∼ 1300 (S1), 2300 (S2), and 3100 (S3), respectively, the radiation intensity, frequency as well as the characteristics of the device working bath temperature are well understood. The strongest radiation of the order of few tens of microwatt was observed from the thickest SAM of S3. We discussed this feature through the N2-relationship and the radiation efficiency of a patch antenna. The thinner SAM of S1 can generate higher radiation frequencies than the thicker one of S3 due to the difference of the applied voltage per junctions limited by the heat-removal performance of the device structures. The observed features in this study are worthwhile designing Bi2212-THz emitters with better emission characteristics for many applications.

Beam Profile Characterisation of an Optoelectronic Silicon Lens-Integrated PIN-PD Emitter between 100 GHz and 1 THz

Knowledge of the beam profiles of terahertz emitters is required for the design of terahertz instruments and applications, and in particular for designing terahertz communications links. We report measurements of beam profiles of an optoelectronic silicon lens-integrated PIN-PD emitter at frequencies between 100 GHz and 1 THz and observe significant deviations from a Gaussian beam profile. The beam profiles were found to differ between the H-plane and the E-plane, and to vary strongly with the emitted frequency. Skewed profiles and irregular side-lobes were observed. Metrological aspects of beam profile measurements are discussed and addressed.