internal photoemission
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Uniformity characterization of SiC, GaN, and α-Ga2O3 Schottky contacts using scanning internal photoemission microscopy

2021 ◽  
Author(s):  
Kenji SHIOJIMA ◽  
Yuto Kawasumi ◽  
Fumimasa Horikiri ◽  
Yoshinobu Narita ◽  
Noboru Fukuhara ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Internal Photoemission

Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures

2021 ◽  
Author(s):  
Ilya Shlyakhov ◽  
Swati Achra ◽  
Niels Bosman ◽  
Inge Asselberghs ◽  
Cedric Huyghebaert ◽  
...  
Keyword(s):  
Internal Photoemission ◽  
Metal Barrier

Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X-ray Photoelectron Spectroscopy

2021 ◽  
Vol 13 (12) ◽  
pp. 14634-14643
Author(s):  
Melanie A. Jenkins ◽  
Konner E. K. Holden ◽  
Sean W. Smith ◽  
Michael T. Brumbach ◽  
M. David Henry ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Zirconium Oxide ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Internal Photoemission ◽  
Band Alignments

Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

2021 ◽  
Vol 60 (SB) ◽  
pp. SBBD12
Author(s):  
Ryo Matsuda ◽  
Fumimasa Horikiri ◽  
Yoshinobu Narita ◽  
Takehiro Yoshida ◽  
Noboru Fukuhara ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Internal Photoemission ◽  
P Type

High performance sub-bandgap photodetection via internal photoemission based on ideal metal/2D-material van der Waals Schottky interface

Nanoscale ◽  
2021 ◽  
Author(s):  
Xuhong Li ◽  
Xiaoqing Chen ◽  
Songyu Li ◽  
Feihong Chu ◽  
Wenjie Deng ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
2D Material ◽  
Internal Photoemission ◽  
The Ideal

A special laminating-flipping technique was introduced, which realized a sub-bandgap responsivity based on the internal photoemission of the ideal van der Waals Schottky interface.

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