Recent advanced applications of ion-gel in ionic-gated transistor

Diversified regulation of electrons have received much attention to realize a multi-functional transistor, and it is crucial to have a considerable control over the charge carriers in transistors. Ionic gel, as the dielectric material in transistors, facilitates a large capacitance, and high induced-carrier concentrations. This review presents the recent progress in ionic-gated transistors (IGTs) that have good mechanical stability as well as high physical and chemical stability. We first briefly introduce the various applications of IGTs in sensors, neuromorphic transistors, organic transistor circuits, and health detection. Finally, the future perspectives of IGTs are discussed and some possible solutions to the challenges are also proposed.

Morphology and Structure Induced Co3O4 Nanowires High-Performance Supercapacitor Electrode Material

The electrochemical performance of the material depends heavily on the morphologies and structural characteristics of the material. Co3O4 samples show the remarkable electrochemical performance owing to the high porosity, appropriate pore size distribution and novel architecture and the effect of NH4F for morphology. Co3O4 nanowires grown on Ni foam have been synthesized through a facile hydrothermal approach, revealing large capacitance of 2178.4 mF cm−2 at the current density of 2 mA cm−2 and superior cycling stability.

Preliminary investigation on performance of photodiode sensor as a dosimeter

Radiation dosimetry in the health and medicine field is crucial to ensure there is no unnecessary ionizing radiation exposure to patients and personnel. While various types of semiconductor dosimeters are available, photodiode sensors are seen as a reliable and cost-effective immediate dosimeter. This study investigates the capabilities of a monolithic photodiode with an on-chip trans-impedance amplifier as a dosimeter in diagnostic radiology. A photodiode sensor covered with black insulation tape is irradiated with the diagnostic x-ray of potential in range between 40 to 90 kV with constant tube current-time product of 50 mAs at 60 cm source-to-detector distance (SDD). Exposures of different tube current at the range of 10 to 250 mA with a constant tube voltage of 70 kVp at the same setup are made. The photodiode sensor connected to the electrometer gives out readings in the millivolt (mV), and the output of the photodiode and semiconductor detector is recorded. The photodiode’s energy dependency, reproducibility, dose response, and distance dependency were evaluated as the capabilities of the photodiode to be used as a dosimeter. For energy dependency, it shows a linearity of 0.9458, while the response to increasing tube current with a constant tube voltage shows the R2 of 0.912. The photodiode shows good dependency on the tube voltage and tube current. Other than that, it also showed a linear coefficient of 0.5138 for distance dependence which is considered as a good linearity fit value for a photodiode as initial performance. However, its reproducibility is poor due to its large capacitance. This monolithic photodiode with an on-chip trans-impedance amplifier has demonstrated good results for energy dependency but poor results for reproducibility. However, the photodiode can be improvised in the future to ensure it is suitable as a dosimeter.

Recent advances in carbon-based supercapacitors

Recent advances in both the core components of carbon-based supercapacitors have been summarized with regard to large-capacitance electrodes and high-potential electrolytes for fabricating high-energy, large-power, and long-running devices.

Structure reinforced birnessite with an extended potential window for supercapacitors

Structure reinforced birnessite via Cr doping exhibits large capacitance, good rate performance, and outstanding cycle life in an extended potential window.